$B9V1i(B $B;~9o(B | $B9V1i(B $BHV9f(B | $B9V1iBjL\!?H/I= | $B%-!<%o!<%I(B | $BJ,N`(B $BHV9f(B | $B |
---|---|---|---|---|---|
L$B2q>l(B $BBh(B2$BF|(B | |||||
(9:00$B!A(B10:00)$B!!(B($B:BD9(B $BLnED(B $BM%(B) | |||||
L201 | LPI$BK!$rMQ$$$?(BBTX$B$+$i$N%+!<%\%s%J%N%U%!%$%P!<$N9b8zN(@=B$(B | Carbon nanofibers Liquid pulse injection technique BTX | S-35 | 495 | |
L202 | $B>\:Y$J2=3XH?1~%9%-!<%`$H(BCFD$B$H$N%+%C%W%j%s%0$K$h$kG.J,2rC:AG(BCVD$B$N?tCM%7%_%e%l!<%7%g%s(B | CVD CFD carbon | S-35 | 995 | |
L203 | $BG.J,2rC:AG(BCVD$B$K$*$1$kH?1~4oFbH>7BJ}8~%,%9AH@.J,I[$N@V30J,8wJ,@O(B | pyrocarbon CVD infrared absorption | S-35 | 445 | |
(10:00$B!A(B11:00)$B!!(B($B:BD9(B $B2O@%85L@(B) | |||||
L204 | $BL\E*$K1~$8$?C1AX%+!<%\%s%J%N%A%e!<%V$N9g@.(B | single-walled carbon nanotubes customized synthesis combinatorial method | S-35 | 588 | |
L205 | $BC1AX%+!<%\%s%J%N%A%e!<%V?bD>G[8~@.D9$H?(G^%J%NN3;R$NAFBg2=!&<:3h(B | single-walled carbon nanotubes rapid growth catalyst deactivation | S-35 | 598 | |
L206 | $BBg5$05%W%i%:%^$K$h$k%@%a!<%8%U%j!<(BCVD$B$N9=C[$H?bD>G[8~C1AX%+!<%\%s%J%N%A%e!<%V9g@.$X$NE83+(B | Atmospheric pressure non-thermal plasma Single-walled carbon nanotubes Ion damage | S-35 | 23 | |
(11:00$B!A(B12:00)$B!!(B($B:BD9(B $BLn:jCRMN(B) | |||||
L207 | $BHsJ?9U(BCO$B%W%i%:%^$rMQ$$$?%@%$%d%b%s%IGvKl$NDc299g@.(B | plasma CVD diamond thin film low temperature synthesis | S-35 | 174 | |
L208 | $B%W%i%:%^%(%C%A%s%0$K$*$1$k%$%*%s%(%M%k%.! | Plasma Etching Ion Energy Distribution Reactive Ion Etching | S-35 | 511 | |
L209 | $B;n839=B$4pHD$rMxMQ$7$?(BC5F8/O2/Ar$B%W%i%:%^H?1~$N%a%+%K%:%`2r@O(B | plasma CVD Dry Etching Reaction Kinetics | S-35 | 453 | |
(13:00$B!A(B14:20)$B!!(B($B:BD9(B $B?y;3@5OB(B) | |||||
L213 | [$BE8K>9V1i(B] $B6a@\>l8w$rMQ$$$?(BCVD$B$K$h$k%J%N2C9)$H$=$N1~MQ(B | Optical Near-Fields Photo-CVD Photochemical Reaction | S-35 | 178 | |
L215 | $B%"%k%4%s(B-$B?eAG%"!<%/$K$h$k(BSn-Ag$B9g6b$+$i$NA*BrE*>xH/B%?J5!9=$N8!F$(B | DC arc Vaporization Enhancement Sn-Ag alloy | S-35 | 624 | |
L216 | $B%9%-%c%K%s%0%"%K!<%k$K$h$k%J%NN3;R(BFeSi2$B!?(BSi$BJ#9gGvKl$N:n@=$H$=$N%J%N9=B$(B | Iron Silicide Zone Melting Crystallization Nano-particle | S-35 | 987 | |
(14:20$B!A(B15:20)$B!!(B($B:BD9(B $BAz3@9,9@(B) | |||||
L217 | $BGvKl(BZMC$BK!$K$h$k(BFeSi2$BGvKl$N:n@=$H29EY$K$h$k7k>=Aj$N@)8f(B | solar cell Iron silicide crystallization | S-35 | 991 | |
L218 | W/O$B%(%^%k%8%g%s$NG3NA2aG;G3>F$K$h$k(BNi$BD6HyN3;R$N@=B$(B | nano particle W/O emulsion combustion | S-35 | 653 | |
L219 | $B8GBN4VH/G.8=>]$rMxMQ$7$?(BTiO2$B%J%NN3;R$N%U%i%C%7%e9g@.(B | nanofabrication solid state reaction oxide materials | S-35 | 781 | |
L$B2q>l(B $BBh(B3$BF|(B | |||||
(9:00$B!A(B10:00)$B!!(B($B:BD9(B $B6LCVD> | |||||
L301 | $B%7%j%3%sI=LL$K$*$1$kM-5!J*J,;R5[CeC&N%5sF0$N$=$N>l4Q;!(B | Silicon Organic compound adsorption | S-35 | 168 | |
L302 | InGaAsP$B7O(BMOVPE$B$K$*$1$k(BV$BB25[C&CeB.EY$H8GAjAH@.(B | MOVPE Crystal Growth Simulation | S-35 | 769 | |
L303 | GaAs$B$*$h$S(BInP$B$N(BMOVPE$B$K$*$1$kI=LL5[CeAX$NB.EY2aDxHf3S(B | MOVPE Surface adsorption layer kinetics | S-35 | 790 | |
(10:00$B!A(B11:00)$B!!(B($B:BD9(B $B1)?<(B $BEy(B) | |||||
L304 | $B9bB.2sE>7?(BCVD$BAuCV$rMQ$$$?(BGaAs$B@.D9%W%m%;%9$K$*$1$k(BH2/N2$B:.9g%,%9%-%c%j%"$N1F6A(B | MOCVD CHEMKIN rapid rotation reactor | S-35 | 587 | |
L305 | $BA*Br@.D9%W%m%U%!%$%k2r@O$K$h$k(BInP,InAs-MOVPE$B@.D9$NB.EYO@(B | InP/InAs-MOVPE Selective area growth Kinetics | S-35 | 687 | |
L306 | MOVPE$B$K$*$1$kI=LLH?1~B.EY$HI=LL86;R9=B$$N4X78(B | MOVPE surface reaction rate surface reconstruction | S-35 | 820 | |
(11:00$B!A(B12:00)$B!!(B($B:BD9(B $BsnF#>fLw(B) | |||||
L307 | $BBg7?(BCVD$BH?1~O'$K$h$k(BBN$B%;%i%_%C%/%99g@.(B | Pyrolitic Boron Nitride CVD Crystal growth | S-35 | 337 | |
L308 | [$BE8K>9V1i(B] 4H-SiC$BMQ9bB.(BCVD$BO'$N3+H/%3%s%;%W%H(B | 4H-SiC homo-epitaxial growth Chemical vapor deposition High-rate growth | S-35 | 424 | |
(13:00$B!A(B14:00)$B!!(B($B:BD9(B $B6aF#1Q0l(B) | |||||
L313 | $B%Q%k%9%$%s%8%'%/%7%g%sJ}<0$K$h$k9bIJ | Pulse injection method GaN MOVPE | S-35 | 755 | |
L314 | $B%Q%k%9%$%s%8%'%/%7%g%s$rMQ$$$?(BInP$B$NA*Br(BMOVPE$B@.D9$K$*$1$kC | abnormal growth Pulse Injection SA-MOVPE | S-35 | 387 | |
L315 | $B%A%?%s;@%9%H%m%s%A%&%`GvKl$N%(%T%?%-%7%c%k@.D9>r7o(B | CVD Epitaxial Growth Strontium Titanate | S-35 | 147 | |
(14:00$B!A(B15:00)$B!!(B($B:BD9(B $B0K86(B $B3X(B) | |||||
L316 | $B%Q%k%9J|EE%W%i%:%^$K$h$k(BTiO2$B$NItJ,4T85$*$h$S$=$NFC@-I>2A(B | partial reduction TiO2 plasma | S-35 | 960 | |
L317 | TiO2$BCf6uN3;R$X$N(BPLD$BK!$K$h$k6bB0C4;}(B | TiO2 hollow particle PLD metal support | S-35 | 982 | |
L318 | $BD6NW3&Fs;@2=C:AGN.BN$rMxMQ$7$?(BTi$B;@2=J*GvKl$NCJ:9HoJ$@.Kl(B | supercritical carbon dioxide thin film titanium oxide | S-35 | 499 | |
(15:00$B!A(B16:00)$B!!(B($B:BD9(B $B=);3BY?-(B) | |||||
L319 | $BD6NW3&N.BN$rMQ$$$?(BULSI$BHy:Y9&$X$N(BCu$BKd$a9~$_(B | Gap-filling Supercritical Fluid Cu | S-35 | 848 | |
L320 | $B;@2=4T85$rMxMQ$7$?(BULSI-Cu$BG[@~7A@.MQ(BCVD$B%W%m%;%9$NB.EYO@(B | CVD step coverage Cu oxide | S-35 | 452 | |
L321 | $BG.%U%#%i%a%s%H?eAG%i%8%+%k%=!<%9$K$h$k(BCu$BGvKl2~ | hot filament hydrongen radial cu thin films | S-35 | 967 |