SCEJ

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S-45. CVD$B!&%I%i%$%W%m%;%9%7%s%]%8%&%`!!!]%G%P%$%99=B$!&5!G=@)8f$NH?1~9)3X!](B

$B%*!<%,%J%$%6!<(B $BsnF#!!>fLw!JBg:eI\N)Bg3X!K!&2O@%!!85L@!J5~ETBg3X!K(B

CVD$B!$%9%Q%C%?%j%s%0$J$I$N%I%i%$%W%m%;%9$K$h$kGvKl!&HyN3;R7A@.$rCf?4$K!$%J%N!&%_%/%m%l%Y%k$G$N9=B$@)8f!&5!G=@)8f$K4X$9$kOCBj$r=8$a!$=8CfE*$K5DO@$9$k>l$H$7$^$9!#8w!&EE;R%G%P%$%9!$(BMEMS$B!$%^%$%/%m%j%"%/%?$J$I$N7A@.$K$*$$$F!$I,MW$JGvKl$N9=B$$d5!G=$r7P83E*$K$G$O$J$/!$O@M}E*$K:GE,2=$9$k$?$a$NJ}K!O@$r5DO@$7$^$9!#(B

$B:G=*99?7F|;~!'(B2009-09-07 16:39:01

$B$3$NJ,N`$G$h$/;H$o$l(B
$B$F$$$k%-!<%o!<%I(B
$B%-!<%o!<%I(B$B
CVD6$B7o(B**
MOVPE6$B7o(B**
Chemical vapor deposition5$B7o(B*
Carbon nanotube2$B7o(B
carbon nanotubes2$B7o(B
passivation1$B7o(B

$B$BHV9f(B$B9V1iBjL\!?H/I=$B%-!<%o!<%I(B$B
33$B%b%N%a%A%k%7%i%s%,%9$K$h$kB?7k>=(BSiC$BGvKlDc29@.D9(B
($B2#9qBg1!9)(B) $B!{(B($B@5(B)$B1)?<(B $BEy(B$B!&(B$BBg?9(B $B90;N(B
SiC
Monomethylsilane
CVD
4/18
21:45:44
60[$BE8K>9V1i(B] $B5$AjH?1~$K$h$kN3;R@8@.$H%b%G%j%s%0(B
($B9-Bg9)(B) $B!{(B($B@5(B)$B1|;3(B $B4n5WIW(B
CVD
Particle formation
Modeling
4/21
20:50:23
62In-situ$B@V30J,8wJ,@O$rMQ$$$?1_4I7?(BCVD$BH?1~4oFb$N(B2$B
($B5~Bg9)(B) $B!{(B($B@5(B)$B2O@%(B $B85L@(B$B!&(B($B3X(B)$B0KF#(B $B7IJ8(B$B!&(B($B@5(B)$B;01:(B $B9'0l(B
Pyrocarbon
CVD
Infrared absorption
4/21
21:02:35
237$B<+8JAH?%2=%+!<%\%s%J%N%A%e!<%V%(%_%C%?!<%"%l%$$N:n@=$*$h$SEE3&EE;RJ|=PFC@-(B
($BElBg1!9)(B) $B!{(B($B@5(B)$BGrD;(B $BMN2p(B$B!&(B($BBgF|K\%9%/%j!<%s(B) $B8E;T(B $B9M$B!&(B($BElBg1!9)(B) ($B@5(B)$BLnED(B $BM%(B
Carbon nanotube
Self-organization
Field emission
4/27
16:08:33
290$B%G%P%$%94pHD>e$G$N%+!<%\%s%J%N%A%e!<%V$N?bD>G[8~@.D9(B
($BElBg1!9)(B) $B!{(B($B@5(B)$BLnED(B $BM%(B$B!&(B($B3X(B)$BGr0f(B $B@;(B
carbon nanotubes
device substrates
chemical vapor deposition
4/28
09:38:22
418$BC1J,;6%(%"%m%>%k?(G^$rMQ$$$?(BCNT$B$N5$Aj9g@.(B
($B6bBtBg1!(B) $B!{(B($B3X(B)$B8E@n(B $BBsKa(B$B!&(B($B;:Am8&(B) ($B@5(B)$BJ?_7(B $B@?0l(B$B!&(B($B6bBtBgM}9)(B) ($B@5(B)$B@%8M(B $B>OJ8(B$B!&(B($B@5(B)$BBgC+(B $B5H@8(B
Carbon nanotube
Laser ablation
Chemical vapor deposition
4/28
18:03:21
437$BB?7k>=%3%P%k%H%7%j%5%$%IGvKl7A@.$K$*$1$k7k>=@.D9$NM}2r$H@)8f(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BDT(B $BM3$B!&(B($B@5(B)$BDT(B $B2B;R(B$B!&(B($B@5(B)$BLnED(B $BM%(B
cobalt disilicide
crystal growth
sputter deposition
4/28
18:40:45
455[$BE8K>9V1i(B]TFT$B%W%m%;%95;=Q$N8=67$H>-MhE8K>(B
($B%7%c!<%W(B) $B!{;385(B $BNI9b(B
TFT
CVD
LCD
4/28
19:44:34
470$BH>F3BNB@M[EECS$X$N1~MQ$rL\;X$7$?6d%J%NN3;RJ,;6Kl$N8w3XFC@-(B
($BC:%(%M8&(B) $B!{(B($B3X(B)$BEDCf(B $BM$59(B$B!&(B$BH-B<(B $B9@FA(B$B!&(B($B@5(B)$B0K86(B $B3X(B
solar cell
nano-particles
surface plasmon
4/28
20:56:14
484$B%U%CAGHs4^M-86NA$K$h$k(BCu-CVD$B%W%m%;%9$NI>2A(B
($BElBg9)(B) $B!{(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B$BAW(B $B3$@/(B$B!&(B(APCI) Norman John
Cu-CVD
ULSI
Metallization
4/29
11:25:59
498$B?75,%1%_%9%H%j$K$h$k;@2=%"%k%_%K%&%`GvKl$N(BCVD$B9g@.$HJ*@-I>2A(B
($BElBg9)(B) $B!{(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B$B2?(B $B9d(B$B!&(B$B2&(B $B6GN<(B$B!&(B$BK-ED(B $BCR;K(B$B!&(B$BHxEh(B $B@5<#(B
Al2O3
CVD
XPS
4/29
15:50:53
510$BG.(BCVD$BK!$G:n@=$7$?(BSr-Ti$B;@2=J*GvKl$NAH@.(B
($BEl3$Bg1!9)(B) $B!{(B($B3X(B)$B1)$B!&(B$B:#(B $BBgJe(B$B!&(B($B3X(B)$B:4F#(B $B98(B$B!&(B$B1|B<(B $BM%L4(B$B!&(B$B4X:,(B $BE0L@(B$B!&(B($B@5(B)$B=);3(B $BBY?-(B
CVD
EDX
Strontium Titanate
4/29
18:17:46
629$BC1AX%+!<%\%s%J%N%A%e!<%V$N?bD>G[8~@.D9$K$*$1$k(BAl2O3$B2
($BElBg1!9)(B) $B!{(B($B3X(B)$B?yL\(B $B91;V(B$B!&(B($B@5(B)$BLnED(B $BM%(B
single-walled carbon nantoube
Co catalyst
Al2O3 underlayer
4/30
13:11:32
637$B@.Kl$H%(%C%A%s%0$N6%9g$K$h$kHy:Y9&$NA*BrE*Kd$a9~$_5;=Q$N3+H/(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B9bLn(B $B=!0lO:(B$B!&(B($B@5(B)$BDT(B $B2B;R(B$B!&(B($B@5(B)$BLnED(B $BM%(B
chemical vapor deposition
Copper
selective filling
4/30
13:26:12
678$B%Q%k%9DLEE2CG.$K$h$k(BCNT$B%U%#!<%k%I%(%_%C%?$N=V4V
($BElBg1!9)(B) $B!{(B($B@5(B)$B4X8}(B $B9/B@O:(B$B!&(B($BBgF|K\%9%/%j!<%s(B) ($B@5(B)$B8E;T(B $B9M$B!&(B($BElBg1!9)(B) ($B@5(B)$BGrD;(B $BMN2p(B$B!&(B($B3X(B)$B?yL\(B $B91;V(B$B!&(B($B@5(B)$BLnED(B $BM%(B
carbon nanotubes
field emitters
chemical vapor deposition
4/30
14:57:39
687RF$B%W%i%:%^(BCVD$BK!$K$h$k@d1oKl$N7A@.$H6/M6EEBN$NNt2=J]8n8z2L(B
($B:eI\Bg1!9)(B) $B!{(B($B3X(B)$BOB@t(B $BMW(B$B!&(B($B3X(B)$BDT(B $BE0(B$B!&(B($B3X(B)$BW"ED(B $BM40lO:(B$B!&(B($B@5(B)$B2,K\(B $B>0$B!&(B($B@5(B)$BsnF#(B $B>f{J(B$B!&(B($B@5(B)$B6aF#(B $BOBIW(B$B!&(B$B5HB<(B $BIp(B$B!&(B$BF#B<(B $B5*J8(B
RF plasma CVD
ferroelectric film
encapsulation
4/30
15:21:43
706$BD6NW3&Fs;@2=C:AGCf$K$*$1$k6bB0;@2=J*GvKl$N:n@=(B
($B:eI\Bg1!9)(B) $B!{(B($B3X(B)$BW"ED(B $BM40lO:(B$B!&(B($B:eI\Bg9)(B) $B>.Eg(B $B>O8w(B$B!&(B($B:eI\Bg1!9)(B) ($B@5(B)$B2,K\(B $B>0$B!&(B($B@5(B)$BsnF#(B $B>f{J(B$B!&(B($B@5(B)$B6aF#(B $BOBIW(B$B!&(B($BElKLBgB?858&(B) ($B@5(B)$B9b8+(B $B@?0l(B
supercritical carbon dioxide
deposition
metal oxide thin film
4/30
15:38:13
710$BE:2C:^%U%j!<$G$NC1AX%+!<%\%s%J%N%A%e!<%V!&%5%V%_%j%a!<%?@.D9(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BD9C+@n(B $B3>(B$B!&(B($B@5(B)$BLnED(B $BM%(B
single-walled carbon nanotubes
rapid growth
growth mechanism
4/30
15:43:30
712CO$B$rC:AG8;$H$9$k%W%i%:%^(BCVD$B$K$h$kC:AG7O9b5!G=:`NA9g@.(B
($BEl9)Bg1!M}9)(B) $B!{(B($B@5(B)$B?9(B $B?-2p(B$B!&(B($B@5(B)$B>eLn(B $B9bE5(B$B!&(B($B@5(B)$BNkLZ(B $B@5><(B
Plasma enhanced CVD
Carbon nanowall
Carbon nanofiber
4/30
15:45:25
737$BHy:Y9&Kd$a9~$_%W%m%;%9$H$7$F$N(BCVD$B$HD6NW3&GvKl7A@.K!$NHf3S(B
($BElBg9)(B) $B!{(B($B@5(B)$BI4@%(B $B7r(B$B!&(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B
Supercritical fluid
Chemical vapor deposition
Step coverage
4/30
16:23:17
825AlP$B$*$h$S(BH2S$B$rMQ$$$?(BGaAs$BI=LL$N(BMOVPE$BH?1~O'Fb(Bin situ$B%Q%C%7%Y!<%7%g%s(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B;{ED(B $BM:5*(B$B!&(B($B3X(B)$B=P1:(B $BEm;R(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($BElBg@hC<8&(B) ($B@5(B)$BCfLn(B $B5A><(B
MOVPE
passivation
4/30
18:16:01
841MOVPE$BHy>.NN0hA*Br@.D9$K$*$1$k(BSi$B>e(BInAs$B3KH/@8$N@.D9>r7o0MB8@-(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B6aF#(B $B2B9,(B$B!&(B($B3X(B)$B=P1:(B $BEm;R(B$B!&(B$BC]Cf(B $B=<(B$B!&(B$B9bLZ(B $B?.0l(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B$B!&(B($BElBg1!9)(B) ($B@5(B)$B?y;3(B $B@5OB(B
MOVPE
InAs on Si
nucleation
4/30
18:30:14
846In-situ$BI=LL0[J}@-4Q;!$rMQ$$$?(BGaAs MOVPE$B@.D9$N9b86NA8zN(2=(B
($BElBg1!9)(B) $B!{(B($B@5(B)$B54DM(B $BN4M4(B$B!&(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B
MOVPE
Photovoltaics
In-situ monitoring
4/30
18:41:58
858$BHy>.NN0hA*Br(BMOVPE$B$K$*$1$k(BSi$B>e(BInGaAs$B$N86;R9=B$$H8w3XFC@-2r@O(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B=P1:(B $BEm;R(B$B!&(B($B3X(B)$B6aF#(B $B2B9,(B$B!&(B$B@10f(B $BBsLi(B$B!&(B$BC]Cf(B $B=<(B$B!&(B$B9bLZ(B $B?.0l(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B$B!&(B($BElBg1!9)(B) ($B@5(B)$B?y;3(B $B@5OB(B
MOVPE
InGaAs
heteroepitaxy
4/30
18:59:29
917$B%J%N%5%$%:%/%i%9%?!<$NBO@Q$K$h$kI=LL7ABV$N7A@.2aDx(B
($B9-Bg1!9)(B) $B!{(B($B3X(B)$BB<>e(B $B;m?%(B$B!&(B($B3X(B)$BHSED(B $BBg$B!&(B($B@5(B)$BEgED(B $B3X(B
Cluster
Nanostructure
Thin Film
4/30
20:16:49
943InGaN/GaN$BA*Br(BMOVPE$B$K$h$k2D;k8wH/8wGHD9%7%U%H$N%a%+%K%:%`(B
($BElBg9)(B) $B!{(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($B3X(B)$B1vED(B $BNQLi(B$B!&(B$BIYED(B $BM45.(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B
MOVPE
InGaN
$BA*Br@.D9(B
4/30
20:49:39
947$B%^%k%A%9%1!<%k2r@O$K$h$k(BGaN MOVPE$BH?1~%a%+%K%:%`$N8!F$(B
($BElBg9)(B) $B!{(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B$B0B2OFb(B $BM!(B$B!&(B($B3X(B)$B1vED(B $BNQLi(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B
GaN
MOVPE
multi-scale analysis
4/30
20:58:41
953RF$BHsJ?9U%W%i%:%^>l$rMQ$$$?9bJ,;6%J%NN3;R9g@.%W%m%;%9(B
($B9-Bg1!9)(B) $B!{(B($B3X(B)$B>.:d(B $BCNFA(B$B!&(B($B@5(B)$BEgED(B $B3X(B
Non-agglomerated particle
Nonequilibrium plasma
Unipolar charge
4/30
21:04:02

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$B2=3X9)3X2q(B $BBh(B41$B2s=)5(Bg2q(B

(C) 2009 ($B
Most recent update: 2009-09-07 16:39:01
For more information contact $B2=3X9)3X2q(B $BBh(B41$B2s=)5(Bg2q(B $BLd$$9g$;78(B
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