$B9V1i(B $B;~9o(B | $B9V1i(B $BHV9f(B | $B9V1iBjL\!?H/I=$B%-!<%o!<%I(B | $BJ,N`(B $BHV9f(B | $B$BHV9f(B | |
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(13:00$B!A(B15:00)$B!!(B($B:BD9(B $B@P0f!!@5?M!&O7ED!!>05W(B) |
13:00$B!A(B 13:20 | H213 | $B6dG[@~!"F ($B5~Bg(B) $B!{(B($B@5(B)$B2.Ln(B $BJ84](B | ion migration short circuit Ag, Cu wiring
| S-5 | 508 |
13:20$B!A(B 13:40 | H214 | $BM-5!4pHD$rMQ$$$?HyNL%$%*%s%;%s%7%s%0$K4X$9$k4pAC8!F$(B ($BF|N)2=@.9)6H(B) $B!{(B($B@5(B)$BCfB<(B $B1QGn(B | self-assembling monolayer sensor reproducibility
| S-5 | 447 |
13:40$B!A(B 14:00 | H215 | $B%9%Q%C%?%$%*%s%W%l!<%F%#%s%0K!$rMQ$$$?(BCu$B%7!<%IKl$N:n@=$HI>2A(B ($B?7L@OB(B) $B!{(B($BIt(B)$B4]Cf(B $B@5M:(B$B!&(B$BEZ20(B $B5.G7(B$B!&(B($B:eI\Bg1!9)(B) ($B@5(B)$B6aF#(B $BOBIW(B$B!&(B($B@5(B)$BsnF#(B $B>f{J(B | Cu Seed Electoro-Migration Through Silicon Via
| S-5 | 43 |
14:00$B!A(B 14:20 | H216 | Si$B4SDLEE6K(B(TSV)$B$N9bB.(BCu$B$a$C$-(B ($B:eI\Bg1!9)(B) $B!{(B($B@5(B)$B6aF#(B $BOBIW(B$B!&(B$BNkLZ(B $BM5;N(B$B!&(B($B@5(B)$BsnF#(B $B>f{J(B$B!&(B($B@5(B)$B2,K\(B $B>0$B!&(B($B?7L@OB(B) ($BIt(B)$B4]Cf(B $B@5M:(B$B!&(B$BEZ20(B $B5.G7(B | Copper TSV Electrodeposition
| S-5 | 42 |
14:20$B!A(B 14:40 | H217 | $B%U%#%k%I%S%"$a$C$-$K$*$1$k%8%"%j%k%"%_%s7OE:2C:^$N8z2L(B ($B:eI\Bg1!9)(B) $B!{(B($B3X(B)$B5WMx(B $B1QG7(B$B!&(B($B@5(B)$B2,K\(B $B>0$B!&(B($B@5(B)$BsnF#(B $B>f{J(B$B!&(B($B@5(B)$B6aF#(B $BOBIW(B$B!&(B($BF|ElKB(B) $BJ820(B $B>!(B$B!&(B$BC]Fb(B $B | Copper Electrodeposition Via-filling
| S-5 | 365 |
14:40$B!A(B 15:00 | H218 | $B9b%"%9%Z%/%HHf%-%c%S%F%#Fb$NN.F02r@O(B ($B:eI\Bg1!9)(B) $B!{(B($B3X(B)$B>.;3(B $B5AB'(B$B!&(B$BNkLZ(B $BM5;N(B$B!&(B($B@5(B)$B2,K\(B $B>0$B!&(B($B@5(B)$BsnF#(B $B>f{J(B$B!&(B($B@5(B)$B6aF#(B $BOBIW(B | high aspect ratio bump numerical analysis
| S-5 | 671 |
H$B2q>l(B $BBh(B3$BF|(B |
(9:00$B!A(B10:40)$B!!(B($B:BD9(B $BCfB |
9:00$B!A(B 9:20 | H301 | $B%"%b%N%5!<%^%kK!$K$h$k(BGaN$BC17k>=0i@.$K$*$1$k6bB0?(G^$N8!F$(B ($BElKLBgB?858&(B) $B!{(B($B3X(B)$B7*NS(B $B3Y?M(B$B!&(B($B3X(B)$B@PFi(B $BN49,(B$B!&(B$B6@C+(B $BM&Fs(B$B!&(B($B@5(B)$BIZED(B $BBgJe(B$B!&(B$B@P9u(B $BE0(B$B!&(B($B@5(B)$B2#;3(B $B@i><(B | crystal growth gallium nitride supercritical ammonia
| S-5 | 552 |
9:20$B!A(B 9:40 | H302 | $B%"%b%N%5!<%^%kK!$K$h$k(BGaN$BC17k>=0i@.$K$*$$$F0i@.29EY!&05NO$,M?$($k1F6A(B ($BElKLBgB?858&(B) $B!{(B($B3X(B)$B@PFi(B $BN49,(B$B!&(B($B3X(B)$B7*NS(B $B3Y?M(B$B!&(B$B6@C+(B $BM&Fs(B$B!&(B($B@5(B)$BIZED(B $BBgJe(B$B!&(B$B@P9u(B $BE0(B$B!&(B($B@5(B)$B2#;3(B $B@i><(B | crystal growth gallium nitride supercritical ammonia
| S-5 | 565 |
9:40$B!A(B 10:00 | H303 | $B1v2=?eAG%,%9$K$h$k;@2=%O%U%K%&%`%(%C%A%s%0(B ($B2#9qBg1!9)(B) $B!{(B($B@5(B)$B1)?<(B $BEy(B$B!&(B($B2#9qBg9)(B) $B;3CO(B $B@5I'(B$B!&(B$B>.KY(B $B2E;L(B$B!&(B($BF|N)9q:]EE5$(B) $BKY0f(B $BDg5A(B$B!&(B$B9q0f(B $BBYIW(B | HfO2 hi-k
| S-5 | 34 |
10:00$B!A(B 10:40 | H304 | [$B>7BT9V1i(B]$B!!(BMEMS$BF08~(B ($B6eBg(B) $B!{_7ED(B $BNw;N(B | MEMS Life Packaging
| S-5 | 45 |
(10:40$B!A(B12:00)$B!!(B($B:BD9(B $B1)? |
10:40$B!A(B 11:00 | H306 | $B;@2=J*%J%N7k>=$N?eG.9g@.$H$=$NBO@Q$K$h$kEE3&8z2L%H%i%s%8%9%?$N7A@.(B ($BElKLBgB?858&(B) $B!{(B($B@5(B)$B9b8+(B $B@?0l(B$B!&(B(NIMS) $BAa@n(B $BN5GO(B$B!&(B$B$B!&(B$BCN5~(B $BK-M5(B$B!&(B($BElKLBg(BWPI) ($B@5(B)$BKL[j(B $BBg2p(B$B!&(B($B@5(B)$BFn(B $B8xN4(B$B!&(B($BElKLBgB?858&(B) ($B@5(B)$BM-ED(B $BL-I'(B$B!&(B($BElKLBg(BWPI) ($B@5(B)$B0$?,(B $B2mJ8(B | metal oxide nanocrystal drop cast field-effect transistor
| S-5 | 791 |
11:00$B!A(B 11:20 | H307 | ZnS$B4pHD$KBP$9$k%9%k!<%[!<%k%U%#%j%s%0$a$C$-(B ($B:eI\Bg1!9)(B) $B!{(B($B@5(B)$B2,K\(B $B>0$B!&(B($B:eI\Bg9)(B) $B5\K\(B $B$a$0$_(B$B!&(B($B:eI\Bg1!9)(B) ($B@5(B)$BsnF#(B $B>f{J(B$B!&(B($B@5(B)$B6aF#(B $BOBIW(B$B!&(B($BF|;:<+F0$B!&(B$BW"ED(B $B@5 | ZnS deposition Cu
| S-5 | 429 |
11:20$B!A(B 12:00 | H308 | [$B>7BT9V1i(B]$BEE;R%Z!<%Q!u67(B ($B%V%j%B%9%H%s(B) $B!{ED>B(B $B0oIW(B | Electronics Paper Packaging
| S-5 | 444 |
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(13:00$B!A(B15:00)$B!!(B($B:BD9(B $B9b8+!!@?0l!&snF#!!>f{J(B) |
13:00$B!A(B 13:40 | H313 | [$B>7BT9V1i(B]$B!!M-5!%(%l%/%H%m%K%/%9!&%U%)%H%K%/%9$N:G6a$NE83+(B ($B;:Am8&(B) $B!{H,@%(B $B@6;V(B | Organic Device Printing
| S-5 | 48 |
13:40$B!A(B 14:00 | H315 | $B%>%k%2%kK!$K$h$k;@2=0!1tF)L@F3EEKl$ND4@=(B ($BElM}Bg9)(B) $B!{(B($B3X(B)$B0KF#(B $B=S>0(B$B!&(B($B@5(B)$BBgC](B $B>!?M(B$B!&(B($B@5(B)$B>1Ln(B $B8|(B$B!&(B($B@5(B)$B9b66(B $BCR51(B$B!&(B$B:#Ln(B $B5*FsO:(B | zinc oxide sol-gel method thin films
| S-5 | 650 |
14:00$B!A(B 14:20 | H316 | ITO$B%J%NN3;R$rMQ$$$?%[%C%H%W%l%9K!$K$h$kF)L@F3EEKl(B ($B9-Bg1!9)(B) $B!{(B($B3X(B)$B1|B<(B $BOBKa(B$B!&(B($B@5(B)$BLp?a(B $B>49-(B | indium tin oxide hot-press nanoparticles
| S-5 | 152 |
14:20$B!A(B 14:40 | H317 | $BF<%J%NN3;R$rMQ$$$?F3EEKl(B ($B9-Bg1!9)(B) $B!{(B($B3X(B)Arriffin N.$B!&(B($B@5(B)$BLp?a(B $B>49-(B | Copper nanoparticles Conductive film Inkjet
| S-5 | 153 |
14:40$B!A(B 15:00 | H318 | $B%$%a!<%8%;%s%5! ($B=;M'%Y!<%/%i%$%H(B) $B!{9b66(B $BK-@?(B$B!&(B$B@nED(B $B@/OB(B | Adhesive Photodefinable Wafer level pakage
| S-5 | 646 |
(15:00$B!A(B16:40)$B!!(B($B:BD9(B $B2,K\!!>049-(B) |
15:00$B!A(B 15:40 | H319 | [$B>7BT9V1i(B] LED$B<~JU5;=Q$N:G?75;=QF08~$H>-MhE8K>(B ($B;38}Bg(B) $B!{ED8}(B $B>o@5(B | LED Electronics Packaging
| S-5 | 302 |
15:40$B!A(B 16:00 | H321 | $BEE2rF ($B:eI\Bg1!9)(B) $B!{(B($B@5(B)$B2,K\(B $B>0$B!&(B$B9b66(B $BAo(B$B!&(B($B@5(B)$BsnF#(B $B>f{J(B$B!&(B($B@5(B)$B6aF#(B $BOBIW(B | Cu electrodeposition nodule
| S-5 | 119 |
16:00$B!A(B 16:20 | H322 | $BHy>.7A>u$X$N(BNi$B$a$C$-Kl$N:n@=$H7A>u@)8f(B ($B:eI\Bg1!9)(B) $B!{(B($B3X(B)$B0BBp(B $B0lBY(B$B!&(B($B@5(B)$B2,K\(B $B>0$B!&(B($B@5(B)$BsnF#(B $B>f{J(B$B!&(B($B@5(B)$B6aF#(B $BOBIW(B | electrodeposition nickel pattern
| S-5 | 642 |
16:20$B!A(B 16:40 | H323 | FeCoNi$B;0859g6b$K$h$kHy>.9=B$J*$N:n@=$HAH@.@)8f(B ($B:eI\Bg1!9)(B) $B!{(B($B3X(B)$B;3ED(B $B2m;N(B$B!&(B($B@5(B)$B2,K\(B $B>0$B!&(B($B@5(B)$BsnF#(B $B>f{J(B$B!&(B($B@5(B)$B6aF#(B $BOBIW(B | electrodeposition alloy pattern
| S-5 | 818 |