SCEJ

$B2=3X9)3X2q(B $BBh(B42$B2s=)5(Bg2q(B

$B9V1i%W%m%0%i%`!J2q>l!&F|DxJL!K(B

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$B:G=*99?7F|;~!'(B2010-09-03 10:20:57
$B9V1i(B
$B;~9o(B		$B9V1i(B
$BHV9f(B		$B9V1iBjL\!?H/I=$B%-!<%o!<%I(B$BJ,N`(B
$BHV9f(B		$B$BHV9f(B
$B%7%s%]%8%&%`(B $B!c(BCVD$B!&%I%i%$%W%m%;%9!]9=B$!&5!G=@)8f$NH?1~9)3X!]!d(B
(9:00$B!A(B10:00)$B!!(B($B:BD9(B $B?y;3(B $B@5OB(B)
9:00$B!A(B 9:20N301$B%J%N:Y9&Fb$G$N2C?eJ,2rH?1~$K$h$k6bB0!$6bB0;@2=J*%J%NN3;R$N9g@.(B
($B5~Bg9)(B) $B!{(B($B@5(B)$B2O@%(B $B85L@(B $B!&(B ($B3X(B)Gerlach I. $B!&(B ($B@5(B)$B;01:(B $B9'0l(B
nanoreactor
nanoparticle
rapid heating
S-29290
9:20$B!A(B 9:40N302$B%J%N%/%i%9%?!<$N5$AjBO@Q$G7A@.$5$l$kGvKl9=B$$NI>2A(B
($B9-Bg1!9)(B) $B!{(B($B3X(B)$BHSED(B $BBg $B!&(B ($B@5(B)$BEgED(B $B3X(B
cluster
nanostructure
thin film
S-29838
9:40$B!A(B 10:00N303$BN3;R86NAF3F~%W%i%:%^(BCVD$BK!$K$h$k%J%NJ#9g:`NA$N9g@.(B
($B9-Bg1!9)(B) $B!{(B($B3X(B)$B;3K\(B $BMN>4(B $B!&(B ($B@5(B)$BEgED(B $B3X(B
thin film
nanoparticle
nonequilibrium plasma
S-29843
(10:00$B!A(B11:00)$B!!(B($B:BD9(B $B?9(B $B?-2p(B)
10:00$B!A(B 10:20N304$BL5EE2r$a$C$-$K$h$k(BMWCNT/$B%K%C%1%kJ#9gBN$N:n@=(B
($B:eI\Bg1!9)(B) $B!{(B($B3X(B)$B9bLZ(B $B9/9T(B $B!&(B ($B@5(B)$BsnF#(B $B>f{J(B $B!&(B ($B@5(B)$B2,K\(B $B>0 $B!&(B ($B@5(B)$B6aF#(B $BOBIW(B $B!&(B ($BBg:e;T9)8&(B) $BF#86(B $BM5(B $B!&(B $B>.NS(B $BLwG7(B
carbon nanotube
electroless plating
nickel
S-29176
10:20$B!A(B 10:40N305$BHs5.6bB0EE6K(B/$BJ]8n@d1oKl$K$h$k6/M6EEBN$NNt2=M^@)8z2L(B
($B:eI\Bg1!9)(B) $B!{(B($B3X(B)$BDT(B $BE0(B $B!&(B ($B3X(B)$BOB@t(B $BMW(B $B!&(B $BW"ED(B $BM40lO:(B $B!&(B ($B@5(B)$B2,K\(B $B>0 $B!&(B ($B@5(B)$BsnF#(B $B>fLw(B $B!&(B ($B@5(B)$B6aF#(B $BOBIW(B $B!&(B $B5HB<(B $BIp(B $B!&(B $BF#B<(B $B5*J8(B $B!&(B ($B:eBg;:8&(B) $BKLEg(B $B>4(B $B!&(B $BBgEg(B $BL@Gn(B
ferroelectric material
pulsed laser deposition
zinc oxide
S-29189
10:40$B!A(B 11:00N306$B8:05G.(BCVD$BK!$K$h$j:n@=$7$?;@2=0!1t$HFs;@2=%9%:GvKl$NEE5$FC@-(B
($BEl3$Bg1!9)(B) $B!{(B($B3X(B)$B:#(B $BBgJe(B $B!&(B ($B3X(B)$B1) $B!&(B ($B@5(B)$B=);3(B $BBY?-(B
LPCVD
Zinc oxide
Tin oxide
S-29610
(11:00$B!A(B12:00)$B!!(B($B:BD9(B $BB-N)(B $B85L@(B)
11:00$B!A(B 11:20N307$B%W%i%:%^(BCVD$BK!$rMQ$$$?%+!<%\%s%J%N%U%!%$%P!<$N4J0WNN0hA*Br9g@.%W%m%;%9$N3+H/(B
($BEl9)Bg1!M}9)(B) $B!{(B($B@5(B)$B?9(B $B?-2p(B $B!&(B ($BEl9)Bg9)(B) $BNkLZ(B $B=S2p(B $B!&(B ($BEl9)Bg1!M}9)(B) ($B@5(B)$BNkLZ(B $B@5><(B
Plasma-enhanced CVD
Carbon nanofiber
Area-selective synthesis
S-29313
11:20$B!A(B 11:40N308$BC1AX%+!<%\%s%J%N%A%e!<%V$N5$Aj9g@.$HH?1~@)8f(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B:4F#(B $B2BK.(B $B!&(B $B@PDM(B $BMN9T(B $B!&(B ($B@5(B)$BBgBt(B $BMxIW(B $B!&(B ($B@5(B)$BLnED(B $BM%(B
carbon nanotubes
catalytic chemical vapor deposition
gas-phase synthesis
S-29797
11:40$B!A(B 12:00N309Microstructures and transparent conducting properties of self-organized networks of single-walled carbon nanotubes
($BElBg1!9)(B) $B!{(B($B3X(B)Ketpreechasawat Suarpa $B!&(B $B?yL\(B $B91;V(B $B!&(B ($B@5(B)$BGrD;(B $BMN2p(B $B!&(B ($B@5(B)$BLnED(B $BM%(B
carbon nanotubes
self-organization
transparent conducting properties
S-29794
(13:00$B!A(B14:00)$B!!(B($B:BD9(B $BsnF#(B $B>f{J(B)
13:00$B!A(B 13:20N313SCFD$B$K$h$k(BPd$B@=Kl$K$*$1$k?75,1UBN4T85:^$N3+H/(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BEOn4(B $B7=(B $B!&(B ($B@5(B)$BAz3@(B $B9,9@(B
SCFD
liquid reducing agent
palladium
S-29234
13:20$B!A(B 13:40N314$BD6NW3&N.BN$rMQ$$$?@d1o@-2e$X$N6bB0Kl7A@.$HKd$a9~$_FC@-I>2A(B
($BElBg@88&(B) $B!{(B($B@5(B)$BI4@%(B $B7r(B $B!&(B (BEANS$B8&(B) ($B@5(B)$B;3ED(B $B1QM:(B $B!&(B ($BElBg1!9)(B) ($B@5(B)$B?y;3(B $B@5OB(B $B!&(B ($B@5(B)$BAz3@(B $B9,9@(B
Supercritical fluid
Deposition
Step coverage
S-29561
13:40$B!A(B 14:00N315$BD6NW3&N.BN$rMQ$$$?(BSiO2$B@=Kl$K$*$1$kKd$a9~$_FC@-I>2A(B
(BEANS$B8&(B) $B!{(B($B@5(B)$B;3ED(B $B1QM:(B $B!&(B ($BElBg@88&(B) ($B@5(B)$BI4@%(B $B7r(B $B!&(B ($B%G%s%=!<(B) $BKLB<(B $B9/9((B $B!&(B $BI~It(B $BM-(B $B!&(B ($BElBg1!9)(B) ($B@5(B)$B?y;3(B $B@5OB(B $B!&(B ($B@5(B)$BAz3@(B $B9,9@(B
supercritical fluid
deposition
SiO2
S-29601
(14:00$B!A(B15:00)$B!!(B($B:BD9(B $BAz3@(B $B9,9@(B)
14:00$B!A(B 14:40N316[$BE8K>9V1i(B] CVD$B%W%m%;%9$NJ,;RO@E*2rL@$K8~$1$FNL;R2=3X$N2L$?$9Lr3d(B
($B5~Bg9)(B) $B!{N)2V(B $BL@CN(B
CVD$B%W%m%;%9(B
$BNL;R2=3X7W;;(B
$BCb2=J*H>F3BN(B
S-2996
14:40$B!A(B 15:00N318$B%b%N%a%A%k%7%i%s$r86NA$H$9$k(BHotwire-CVD$B$K$h$k(BSiC$B@=Kl$NH?1~%7%_%e%l!<%7%g%s(B
($B4tIlBg1!9)(B) $B!{(B($B3X(B)$B55;3(B $BB:42(B $B!&(B ($B@5(B)$B@>ED(B $BE/(B $B!&(B $BL6ED(B $B9@;J(B $B!&(B $B7*NS(B $B;VF,bC(B
CVD
Silicon carbide
Simulation
S-29819
(15:00$B!A(B16:00)$B!!(B($B:BD9(B $BLnED(B $BM%(B)
15:00$B!A(B 15:20N319Si$B%(%T%?%-%7%c%k9bB.@.D98~$1H?1~%b%G%k5Z$SH?1~%a%+%K%:%`$N2r@O(B
($BK-EDCf8&(B) $B!{(B($B@5(B)$BA4(B $B4p1I(B $B!&(B $BCfEh(B $B7r $B!&(B ($BIt(B)$B>._7(B $BN490(B $B!&(B $B?y;3(B $BN41Q(B $B!&(B $B@P;R(B $B2m9/(B $B!&(B ($B4tIlBg(B) ($B@5(B)$B@>ED(B $BE/(B $B!&(B $B7*NS(B $B;VF,bC(B $B!&(B ($BElBg1!9)(B) ($B@5(B)$B1[(B $B8wCK(B
Si epitaxial
Reaction mechanism
Growth rate
S-29291
15:20$B!A(B 15:40N320$BHy>.NN0hA*Br(BMOVPE$B$rMQ$$$?(BSi$B>e(BInGaAs$B$N7A>u6Q0l2=$K8~$1$?(BSi$BI=LL>uBV$H(BInAs$B@.D9$N4X78(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B=P1:(B $BEm;R(B $B!&(B ($B3X(B)$B6aF#(B $B2B9,(B $B!&(B $BC]Cf(B $B=<(B $B!&(B $B9bLZ(B $B?.0l(B $B!&(B ($B@5(B)$BAz3@(B $B9,9@(B $B!&(B ($BElBg@hC<8&(B) $BCfLn(B $B5A><(B $B!&(B ($BElBg1!9)(B) ($B@5(B)$B?y;3(B $B@5OB(B
MOVPE
heteroepitaxy
InGaAs on Si
S-29568
15:40$B!A(B 16:00N321$B@.D9NN0h69:u2=A*Br(BMOVPE$B$K$h$k(BSi$B>e(BInGaAs$B$N9b2#(B/$B=DHf@.D9(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B6aF#(B $B2B9,(B $B!&(B ($B3X(B)$B=P1:(B $BEm;R(B $B!&(B $BC]Cf(B $B=<(B $B!&(B $B9bLZ(B $B?.0l(B $B!&(B ($BElBg@hC<8&(B) $BCfLn(B $B5A><(B $B!&(B ($BElBg1!9)(B) ($B@5(B)$B?y;3(B $B@5OB(B
InGaAs
MOVPE
selctive area growth
S-29630
(16:00$B!A(B16:40)$B!!(B($B:BD9(B $B2O@%(B $B85L@(B)
16:00$B!A(B 16:20N322$BBg7?H?1~4o$G$N(BGaAs$BA*Br(BMOVPE$B@.D9$N2r@O$H@)8f(B
($BElBg9)(B) $BA0Be(B $BIpN\(B $B!&(B ($B=;M'2=3X(B) $B;T@n(B $BKa(B $B!&(B $B?A(B $B2mI'(B $B!&(B ($BElBg1!9)(B) ($B@5(B)$B?y;3(B $B@5OB(B $B!&(B ($BElBg@hC<8&(B) $BCfLn(B $B5A><(B $B!&(B ($BElBg1!9)(B) $B!{(B($B@5(B)$BAz3@(B $B9,9@(B
GaAs
MOVPE
large scale reactor
S-29214
16:20$B!A(B 16:40N323$B9b86NA8zN((BGaAs-MOVPE$B$K$*$1$kIT=cJ*G;EY@)8f$HB@M[EECS1~MQ(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B54DM(B $BN4M4(B $B!&(B ($B@5(B)$B?y;3(B $B@5OB(B $B!&(B ($BElBg@hC<8&(B) $BCfLn(B $B5A><(B
MOVPE
photovoltaics
GaAs
S-29808
$B9V1i%W%m%0%i%`(B
$B2=3X9)3X2q(B $BBh(B42$B2s=)5(Bg2q(B
(C) 2010 ($B
Most recent update: 2010-09-03 10:20:57
For more information contact $B2=3X9)3X2q4X@>;YIt(B $BBh(B42$B2s=)5(Bg2q(B $BLd$$9g$;78(B
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