$B$3$NJ,N`$G$h$/;H$o$l(B$B$F$$$k%-!<%o!<%I(B
| $B?9?-2p!JEl9)Bg!K!&LnEDM%!JEl5~Bg!K!&CSED7=!J%"%F%J%7%9!K(B |
$BBgLL@Q$+$DDc%3%9%H$G$NGvKl!&HyN3;R7A@.5;=Q$d?7$7$$9b5!G=Kl$N@=Kl!&2C9)5;=Q$,!"B@M[EECS$dEE;R%G%P%$%9!"(BMEMS$B!"%^%$%/%m%j%"%/%?$J$IMM!9$JJ,Ln$G5a$a$i$l$F$$$^$9!#K\%7%s%]%8%&%`$G$O!"GvKl7A@.!&HyN3;R9g@.!&Hy:Y2C9)%W%m%;%9$K$*$1$k9=B$!&5!G=@)8f5;=Q$K$D$$$F!":GE,>r7o$r7P83E*$KC5:w$9$k$N$G$O$J$/!"H?1~%a%+%K%:%`$NM}2r$rDL$7$?O@M}E*$J:GE,2=$rL\;X$75DO@$9$k$3$H$rL\E*$H$7$^$9!#$J$*!"M%=($JH/I=$r$5$l$?
$B:G=*99?7F|;~!'(B2012-09-29 21:47:01
| $B$3$NJ,N`$G$h$/;H$o$l(B $B$F$$$k%-!<%o!<%I(B | $B%-!<%o!<%I(B | $B | |
|---|---|---|---|
| CVD | 8$B7o(B | | |
| chemical vapor deposition | 4$B7o(B | | |
| Supercritical Fluid Deposition | 3$B7o(B | | |
| SiC | 3$B7o(B | | |
| MOVPE | 3$B7o(B | | |
| QMS | 2$B7o(B | | |
| Graphene | 2$B7o(B | | |
| thin film | 2$B7o(B | | |
| conductive oxide | 1$B7o(B | | |
| $B | $B9V1iBjL\!?H/I=| $B%-!<%o!<%I(B | $B | |
|---|---|---|---|
| 8 | $BHs>= | $BC:2=7>AG(B CVD $BDc29%W%m%;%9(B | 4/10 16:03:31 |
| 92 | ULSI-Cu$BG[@~MQ(BCo(W)$B%P%j%dKl7A@.(BCVD/ALD$B%W%m%;%9$N:GE,@_7W(B | CVD amidinate alloy | 4/20 15:24:18 |
| 99 | SiC-CVD$B%W%m%;%9$X$N(BHCl$B%,%9E:2C8z2L(B | CVD SiC QMS | 4/20 20:58:27 |
| 148 | SiC-CVD$B%W%m%;%9H?1~5!9=2r@O$N$?$a$NG.J,2r5$Aj | SiC CVD QMS | 4/23 16:31:54 |
| 210 | $B6bB0%U%j!<%0%i%U%'%s$N4pHD>eD>@\7A@.$H9=B$@)8f(B | graphene patterned growth metal-free | 4/24 19:27:33 |
| 258 | Catalyst control for millimeter-tall single-walled carbon nanotubes with improved quality and areal density | single walled carbon nanotubes chemical vapor deposition coarsening of catalyst | 4/25 14:00:09 |
| 270 | $BDc29$G$N%+!<%\%s%J%N%A%e!<%V$NcGL)9g@.(B | carbon nanotubes chemical vapor deposition low temperature growth | 4/25 15:35:39 |
| 277 | $BD6NW3&N.BN$rMQ$$$?%9%H%m%s%A%&%`%k%F%K%&%`;@2=Kl@=Kl%a%+%K%:%`(B | Supercritical Fluid Deposition Strontium ruthenium oxide (SRO) Deposition Mechanism | 4/25 16:17:41 |
| 283 | [$B>7BT9V1i(B]$BM-5!J,;R=$>~;@2=J*%J%N7k>=$N9g@.!$=8@Q$H5!G=2=(B | oxide nanocrystals surface modification synthesis, integration, and functionalization | 4/25 16:57:14 |
| 288 | [$B>7BT9V1i(B]$B%J%N%5%$%:J* | nanomaterial gas phase deposition surface formation | 4/25 17:16:05 |
| 289 | $BD6NW3&(BCO2$B$rMQ$$$?(BTiO2$BGvKl@=KlMQA06nBN$NA*Br(B | supercritical fluid deposition thin film titanium dioxide | 4/25 17:16:22 |
| 293 | [$BE8K>9V1i(B]$BD6DcB;=}Hy:Y2C9)%W%m%;%9$N%J%N%W%m%;%C%7%s%0$X$NE83+(B | Damage-free Neutral beam Nano-material | 4/25 17:33:25 |
| 400 | $B%W%i%:%^(BCVD$B$K$h$kJ.N.$rMQ$$$?(BSi$B@=Kl$HN.BN!&H?1~2r@O(B | CVD $BGvKl(B $B%7%j%3%s(B | 4/26 15:12:29 |
| 419 | [$B>7BT9V1i(B]$BH>F3BN%W%i%:%^%W%m%;%9AuCV$N%7%_%e%l!<%7%g%s5;=Q(B | semiconductor manufacturing equipment plasma processing numerical simulation | 4/26 16:50:07 |
| 484 | SiC-CVD$B%W%m%;%9$K$*$1$k5$AjH?1~7W;;(B | SiC CVD calculation | 4/26 20:26:36 |
| 498 | $BD6NW3&N.BN$rMQ$$$?%J%N%$%s%W%j%s%HMQ(BNi$B%b!<%k%I:n@=%W%m%;%9$N3+H/(B | Supercritical Fluid Deposition Ni nano-imprint | 4/26 21:58:20 |
| 509 | $B%W%i%:%^(BCVD$BK!$K$h$k(BTiC$B7O9E | film growth chemical vapor deposition titanium carbide | 4/26 23:19:51 |
| 513 | $BD6NW3&Fs;@2=C:AG$rMQ$$$?(BTiO2$B!"(BBi2O3$BGvKl@.D9$NH?1~5!9=2r@O$HJ#9gKl2=(B | supercritical carbon dioxide thin film deposition | 4/27 00:16:10 |
| 553 | $B4pHD>eC1AX%+!<%\%s%J%N%A%e!<%V!"%_%j%a!<%?!<%9%1!<%k@.D9$NI,MW>r7o$H9=B$@)8f(B | single-walled carbon nanotube chemical vapor deposition rapid growth | 4/27 10:13:13 |
| 569 | Monolithic integration of multi-wavelength InGaN/GaN MQW LEDs via selective area MOVPE | MOVPE nitride semiconductor LED | 4/27 10:36:03 |
| 672 | $BHs5.6bB0;@2=J*EE6K$K$h$k6/M6EEBN%-%c%Q%7%?$N0BDj@-I>2A(B | ferroelectric material pulsed laser deposition conductive oxide | 4/27 14:12:19 |
| 682 | $BB@M[EECSMQ(BCIS$BGvKl:n@=$K$*$1$k(BSe$B2=%W%m%;%9$ND6NW3&N.BN$rMQ$$$?Dc292=(B | CIGS Solar Cell Conversion Supercritical Fluid | 4/27 14:32:01 |
| 759 | Cu-CVD$B%W%m%;%9$N=i4|3KH/@8!&@.D9$KBP$9$k2 | Cu-CVD Nucleation ULSI | 4/27 16:24:31 |
| 797 | $B%@%$%d%b%s%I%i%$%/%+!<%\%s@.KlMQ9b<~GH(BCH4$B%W%i%:%^$N%7%_%e%l!<%7%g%s(B | diamond like carbon plasma simulation | 4/27 17:21:08 |
| 807 | Si(111)$B>e(BInAs$B$NA*Br%X%F%m%(%T%?%-%7%c%k@.D9$K$*$1$k3&LLEE5$EAF3FC@-(B | MOVPE selective-area InAs/Si | 4/27 17:31:59 |
| 825 | $B%"%k%3%-%7%I86NA$rMQ$$$?%j%A%&%`;@2=J*GvKl$NG.(BCVD | CVD Lithium tert-butoxide Lithium Oxide | 4/27 17:53:02 |
| 860 | $BJd=~%I!<%T%s%0$K$h$k(BInGaAs/GaAsP$BNL;R0f8MB@M[EECS$N%-%c%j%"2s<}8zN(8~>e(B | InGaAs / GaAsP quantum well solar cells compensation doping MOVPE | 4/27 18:33:03 |
| 919 | $B9b=88wH/EEMQ%^%$%/%m=8@QD>Ns@\B3(BGaAs$BB@M[EECS$N;n:n(B | micromachining monolithic integrated solar cells | 4/27 19:45:17 |
| 989 | [$BE8K>9V1i(B] $B2=3XE*GmN%$*$h$S(BCVD$B$K$h$k%0%i%U%'%s$N@.Kl$HB@M[EECSMQF)L@F3EEKl$X$N1~MQ$HE8K>(B | Graphene Transparent Conductive Film CVD | 4/27 22:04:33 |
(C) 2012 $B8x1W
www3.scej.org
easp 2.28; update.pl 2.28a (C)1999-2011 kawase