SCEJ 46th Autumn Meeting (Fukuoka, 2014): Hall and day program

`SCEJ 46th Autumn Meeting (Fukuoka, 2014)`

Hall and day program

Hall G

Most recent update: 2014-08-08 13:21:03

Day 2
Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
Symposium <CVD & Dry Processes - Reaction engineering for controlling microstructure and functions>
(9:00–10:00) (Chair: Mori S.)
9:00– 9:20	G201	Hot-wire-assisted Atomic Layer Deposition of Ru Thin Films: Growth Characteristics, Composition, and Structural Property (U. Tokyo) Yuan Guangjie, Hideharu Shimizu, Takeshi Momose, Yukihiro Shimogaki	Atomic layer deposition Hot wire non-oxidization ambient	S-37	386
9:20– 9:40	G202	Fabrication of ferroelectric capacitor with conductive oxide electrodes and investigation of degradation mechanism (Osaka. pref. U.) Takada Y., Amano T., Okamoto N., Saito T., Kondo K., Yoshimura T., Fujimura N., (Inst. Sci. and Ind. Res.) Higuchi K., Kitajima A.	ferroelectric capacitor conductive oxide degradation mechanism	S-37	816
9:40– 10:00	G203	Preparation of SiOC anodes for Li-ion batteries by atmospheric chemical vapor deposition with ozone. (Osaka Pref. U.) Tsujimoto Yuichi, Okamoto Naoki, Saito Takeyasu, Kondo Kazuo, (lignyte) Ide isami, Nishikawa Masanobu, Onishi yoshikazu	Li-ion batteries SiOC CVD	S-37	907
(10:00–11:00) (Chair: Saito T.)
10:00– 10:20	G204	Non-catalytic synthesis of carbon nanofibers by hollow cathode discharge (Tokyo Tech) Mori Shinsuke, Tanaka Eichi, Suzuki Masaaki	Plasma-enhanced CVD Carbon Nanofiber Non-catalytic synthesis	S-37	999
10:20– 10:40	G205	Uniform deposition of silicon thin film with high deposition rate in plasma CVD (Gifu U.) Nishida Satoshi, Yamamoto Shota, Matsunaga Takuma, Muta Hiroshi, Kuribayashi Shizuma	¥×¥é¥º¥ÞCVD ¹âÂ®À½Ëì ¥·¥ê¥³¥ó	S-37	395
10:40– 11:00	G206	Carrier gas effects on morphology of silica film prepared by plasma CVD (Kyoto U.) Takeda E., Deguchi T., Kawase M.	Plasma CVD HMDSO silica	S-37	754
(11:00–12:00) (Chair: Miura Y.)
11:00– 11:20	G207	Synthesis control of nanocomposite thin films by vapor/solid-precursor PECVD and evaluation of their photocatalytic activity (Hiroshima U.) Taguchi Tomoya, Kubo Masaru, Shimada Manabu	thin film nanoparticle composite material	S-37	345
11:20– 11:40	G208	Coating of MPC Polymer by Surface Modification of Titan using 172 nm VUV (Gifu U.) Yamaguchi Kyohei, Kambara Shinji	VUV Titan MPC polymer	S-37	290
11:40– 12:00	G209	(withdrawn)		100	150
(13:00–14:00) (Chair: Miura Y.)
13:00– 13:40	G213	[Review lecture] Current status and future prospect of CIS-based thin-film PV technology as a heterojunction device (Showa Shell Sekiyu/Solar Frontier) Kushiya K.	CVD CIS thin film solar cell Heterojunction device	S-37	147
13:40– 14:00	G215	Structural characterization of Cu₂ZnSn(S,Se)₄thin films for solar cells fabricated by supercritical fluid reaction (IMRAM) Nakayasu Y, Oka N, Tomai T, Honma I	supercritical fluid solar cell CZTS thin film	S-37	161
(14:00–15:00) (Chair: Kawase M.)
14:00– 14:20	G216	Stoichiometric Bi₄Ti₃O₁₂ film formation using supercritical fluid deposition (U. Tokyo) Zhao Yu, Jung Kyubong, Momose Takeshi, Shimogaki Yukihiro	Bi4Ti3O12 supercritical fluid deposition stoichiometric	S-37	291
14:20– 14:40	G217	Orientation control and electrical property of ferroelectric thin films by PLD (Osaka Pref. U.) Amano T., Takada Y., Okamoto N., Saito T., Kondo K., Yosimura T., Fujimura N., (Osaka U.) Higuchi K., Kitajima A.	ferroelectric material pulsed laser deposition orientation control	S-37	971
14:40– 15:00	G218	[Invited lecture] Heat and mass transfer analysis for coating process of TiN thin film in a tubular reactor by a thermal CVD method (Yamaguchi U.) Tanoue K., (Ube Ind.) Hatori Y., (Yamaguchi U.) Nishimura T.	CVD Titanium nitride Heat and mass transfer	S-37	148
(15:00–16:00) (Chair: Noda S.)
15:00– 15:20	G219	Study on the Sticking Probability of SiC-CVD Species Using Methyltrichlorosilane (2) (U. Tokyo) Shima Kohei, Sato Noboru, Funato Yuichi, Sugiura Hidetoshi, (IHI) Fukushima Yasuyuki, (U. Tokyo) Momose Takeshi, Shimogaki Yukihiro	CVD SiC methyltrichlorosilane	S-37	387
15:20– 15:40	G220	Comparative study of organosilane precursors in SiC-CVD (U. Tokyo) Sugiura Hidetoshi, Shima Kohei, Sato Noboru, Funato Yuichi, (IHI) Fukushima Yasuyuki, (U. Tokyo) Momose Takeshi, Shimogaki Yukihiro	SiC CVD Chlorosilane	S-37	268
15:40– 16:00	G221	Construction of reaction mechanism of methyltrichlorosilane considering pressure dependence for SiC-CVD process (U. Tokyo) Sato Noboru, Funato Yuichi, Shima Kohei, Sugiura Hidetoshi, Fukushima Yasuyuki, Momose Takeshi, Koshi Mituo, Shimogaki Yukihiro	SiC CVD reaction mechanism	S-37	312
(16:00–17:00) (Chair: Nishida S.)
16:00– 16:20	G222	Reactor scale simulation for optimizing SiC-CVI process using methyltrichlorosilane (U.Tokyo) Funato Yuichi, Sato Noboru, (IHI) Fukusima Yasuyuki, (U.Tokyo) Shima Kohei, Sugiura Hidetoshi, Momose Takeshi, Shimogaki Yukihiro	CVI SiC Methyltrichlorosilane	S-37	285
16:20– 17:00	G223	[Review lecture] Design of Advanced Nanomaterials Using Soluble Carbon Nanotubes (Kyushu U.) Nakashima N.	CVD Advanced nanomaterial Carbon nanotube	S-37	149

Technical program
SCEJ 46th Autumn Meeting (Fukuoka, 2014)

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Most recent update: 2014-08-08 13:21:03
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