SCEJ

$B2=3X9)3X2q(B $BBh(B47$B2s=)5(Bg2q(B

$B9V1i?=$79~$_0lMw!J%7%s%]%8%&%`!&9V1iJ,N`JL!K(B

SY) $BIt2q%7%s%]%8%&%`(B

SY-9. CVD$B!&%I%i%$%W%m%;%9!!!]9=B$!&5!G=@)8f$NH?1~9)3X!]!J8}F,H/I=!K(B

$B%*!<%,%J%$%6!<(B: $B=);3!!BY?-!JEl3$Bg3X!K!&snF#!!>f{J!JBg:eI\N)Bg3X!K!&6LCV!!D>

CVD$B$r$O$8$a$H$9$k%I%i%$%W%m%;%9$O!$%(%l%/%H%m%K%/%9!$B@M[EECS!$(BMEMS$B!$5!G=@-%3!<%F%#%s%0Ey$NJ,Ln$K$*$$$F!$4p445;=Q$H$J$C$F$$$k!#K\%7%s%]%8%&%`$G$O!$(BCVD$B$HN`1o5;=Q$rMxMQ$7$?GvKl7A@.!$HyN3;R9g@.!$Hy:Y2C9)$K$*$1$k@=IJ$N9=B$$H5!G=$r@)8f$9$k$?$a$K!$H?1~%a%+%K%:%`$NM}2r$K$h$kO@M}E*$J:GE,2=$rL\;X$75DO@$9$k$3$H$rL\E*$H$7$^$9!#$J$*!$M%=($JH/I=$r$5$l$?)Ne>^$rB#Dh$7$^$9!#(B

$B:G=*99?7F|;~!'(B2016-01-20 13:09:01

$B$3$NJ,N`$G$h$/;H$o$l(B
$B$F$$$k%-!<%o!<%I(B		$B%-!<%o!<%I(B$B
CVD5$B7o(B*
plasma CVD2$B7o(B
compound semiconductor2$B7o(B
supercritical fluid deposition2$B7o(B
supercritical CO22$B7o(B
Chemical Vapor Deposition2$B7o(B
by-products2$B7o(B
electron beam evaporated1$B7o(B

$B$BHV9f(B$B9V1iBjL\!?H/I=$B%-!<%o!<%I(B$BH/I=7A<0(B
11SiHCl3$B$K$h$k%7%j%3%s@.Kl;~$NI{@8@.J*7A@.5!9=(B
($B2#9qBg1!9)(B) $B:y0f(B $B$"$f$_(B$B!&(B $Bc7F#(B $B$"$fH~(B$B!&(B ($B@5(B)$B!{1)?<(B $BEy(B		Silicon epitaxial growth
trichlorosilane
by-products
O
128[$BE8K>9V1i(B] $B2=9gJ*H>F3BN%J%N%o%$%d$N%X%F%m%(%T%?%-%7%c%k@.D9$HE8K>(B
($BKLBgNL;R=8@Q%(%l%/%H%m%K%/%98&5f%;(B) $B!{IZ2,(B $B9n9-(B$B!&(B $BK\5W(B $B=g0l(B$B!&(B $BJ!0f(B $B9';V(B		compound semiconductor
nanowire
heteroepitaxial growth
O
129[$BE8K>9V1i(B] 3D$B%a%b%j;~Be$N%W%m%;%95;=QE8K>(B
($BEl		semiconductor fabrication
process technology
3D memory
O
130[$B>7BT9V1i(B] $BCb2=J*GvKl$NHy:Y9=B$@)8f$H%i%8%+%k$rMQ$$$?Dc29$G$N@.KlJ}K!(B
($BKL8+9)Bg(B) $B!{Ip;3(B $B??5](B$B!&(B $B:4F#(B $B>!(B$B!&(B $BLnLp(B $B8|(B		nitride thin film
sputtering
radical nitridization
O
131[$B>7BT9V1i(B] $B9b05(BCO2$BE:2C$K$h$kG4EYDc2<$rMxMQ$7$?9b05J.L8@.Kl5;=Q(B
($B;:Am8&!&2=3X%W%m%;%98&5fItLg(B) $B!{@nyu(B $B?50lO/(B$B!&(B ($BElKLBg(B) $BNkLZ(B $BL@(B		high pressure carbon dioxide
spray deposition
viscosity
O
132[$B>7BT9V1i(B] $BH>F3BN%W%m%;%9MQM-5!6bB086NA$N@_7W!"9g@.$*$h$S(BALD$B$X$NE,MQ(B
($B%(%"!&%j%-!<%I(B) Dussarrat Christian		atomic layer deposition
conformal growth
reaction mechanism
O
156$BD6NW3&MOBN$N29EY8{G[$rMxMQ$7$?%"%s%H%i%;%s@=Kl$K$*$1$k2aK0OBEY$*$h$SG;EY$N1F6A(B
($BElBg1!9)(B) ($B3X(B)$B!{K-AR(B $B>MB@(B$B!&(B ($B@5(B)$B2<;3(B $BM52p(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B$B!&(B ($B@5(B)$BI4@%(B $B7r(B		Supercritical CO2
anthracene
crystallization
O
273$B5$AjK!$K$h$k(BAg-TiO2$B%J%NN3;R:.9gBO@QKl$N:n@=(B
($B9-Bg1!9)(B) ($B3X(B)$B!{A}ED(B $B1Q9b(B$B!&(B $BED0f(B $BM*2p(B$B!&(B ($B@5(B)$B5WJ](B $BM%(B$B!&(B ($B@5(B)$BEgED(B $B3X(B		PECVD
Nanoparticle synthesis
PVD
O
278$B86NAC:2=?eAG
($B5~Bg9)(B) ($B3X(B)$B!{GO>l(B $BfFJ?(B$B!&(B ($B3X(B)$B4d0f(B $BK-I'(B$B!&(B ($B3X(B)$BD9ED(B $BfF(B$B!&(B ($B@5(B)$B2O@%(B $B85L@(B		CVD
Pyrolysis
Carbon
O
442$BD6NW3&N.BN$rMQ$$$?(BTiO2$B%J%N:Y9&$X$N(BCuInS2$BKd$a9~$_@.Kl(B
($BElKLBgB?858&(B) ($B3X(B)$B!{0B0f(B $BMFFs(B$B!&(B ($B3X(B)$BCf0B(B $BM4B@(B$B!&(B ($BElBg9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($BElKLBgB?858&(B) ($B@5(B)$Bcx5o(B $B9bL@(B$B!&(B ($B@5(B)$BK\4V(B $B3J(B		supercritical fluid deposition
nanostructure
compound semiconductor
O
468$BM-5!H>F3BN:`NA>:2Z@:@=%W%m%;%9$N2r@O(B
($BElBg1!9)(B) ($B3X(B)$B!{4dCK(B $BBs:H(B$B!&(B ($B@5(B)$B;38}(B $BM34tIW(B$B!&(B ($BElBg4D0B%;(B/$BElBg1!9)(B) ($B@5(B)$BDT(B $B2B;R(B		sublimation
purification
organic semiconductors
O
543$B%3%s%U%)!<%^%k$JD6NW3&N.BNBO@Q$K$*$1$k(BCO2$B05NO$N1F6A(B
($BElBg1!9)(B) ($B3X(B)$B!{%A%g%&(B $B%f%&(B$B!&(B ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B@5(B)$B2<;3(B $BM52p(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B		supercritical fluid deposition
pressure
kinetics
O
605$B%0%i%U%'%s$N
($BAaBg1!@h?JM}9)(B) ($B3X(B)$B!{Bg@n(B $BD+M[(B$B!&(B ($B@5(B)$BD9C+@n(B $B3>(B$B!&(B ($B@5(B)$BLnED(B $BM%(B		Graphene
Chemical vapor deposition
Nucleation and growth
O
608$BF3F~%,%9$r@Z$jBX$($k(BCVD$B%W%m%;%9$NHsDj>o%,%9N.$l%7%_%e%l!<%7%g%s(B
($B%"%F%J%7%9(B) ($B@5(B)$BCSED(B $B7=(B		CVD
ALD
simulation
O
643$B5^B.>xCe$H$=$N>lMOM;7k>=2=$K$h$kBgN37B7k>=(BSi$BGvKl:n@=K!$N3+H/(B
($BAaBg@h?JM}9)(B) ($B3X(B)$B!{;3:j(B $BM*J?(B$B!&(B ($B@5(B)$BD9C+@n(B $B3>(B$B!&(B ($B@5(B)$BBgBt(B $BMxCK(B$B!&(B ($B@5(B)$BLnED(B $BM%(B		crystalline silicon thin films
vapor deposition
liquid phase crystallization
O
645$B0[$J$k;@AG05NO$G:n@=$7$?F3EE@-;@2=J*EE6K$rM-$9$k6/M6EEBN%-%c%Q%7%?$NEE5$FC@-(B
($B:eI\Bg1!9)(B) ($B3X(B)$B!{9bED(B $B`v;R(B$B!&(B ($B3X(B)$BE7Ln(B $BBY2O(B$B!&(B ($B@5(B)$B2,K\(B $B>0$B!&(B ($B@5(B)$BsnF#(B $B>f{J(B$B!&(B ($B@5(B)$B6aF#(B $BOBIW(B$B!&(B $B5HB<(B $BIp(B$B!&(B $BF#B<(B $B5*J8(B$B!&(B ($B:eBg;:8&(B) $BHu8}(B $B9(Fs(B$B!&(B $BKLEg(B $B>4(B		Ferroelectric capacitor
pulsed laser deposition
oxygen pressure
O
668$BD6NW3&MOBN5^B.KDD%K!$K$h$k(BTIPS$B%Z%s%?%;%sGvKlAO@=$HM-5!GvKl%H%i%s%8%9%?$NFC@-I>2A(B
($B?.=#Bg1!M}9)(B) ($B3X(B)$B!{2FL\(B $B$B!&(B ($B3X(B)$B9b66(B $BM$BA(B$B!&(B ($B?.=#Bg1!Am9)(B) ($B3X(B)$BF#0f(B $BN5Li(B$B!&(B ($B?.=#Bg9)(B) ($B@5(B)$BFbED(B $BGn5W(B		Supercritical carbon dioxide
TIPS-pentacene thin films
Organic thin film transistor (OTFT)
O
747$BD69b%"%9%Z%/%HHf%_%/%m%-%c%S%F%#$rMQ$$$?(BSiC-CVI$BK!$N%b%G%j%s%0(B
($BElBg1!9)(B) ($B3X(B)$B!{Eh(B $B9IJ?(B$B!&(B ($B3X(B)$B:4F#(B $BEP(B$B!&(B ($B3X(B)$BgULg(B $BM$0l(B$B!&(B $B?y1:(B $B=(=S(B$B!&(B ($B3X(B)$BCf86(B $BBsLi(B$B!&(B (IHI$B4pHW8&(B) ($B@5(B)$BJ!Eg(B $B9/G7(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B		CVD
SiC
methyltrichlorosilane
O
757$B%W%i%:%^(BCVD$BK!$rMQ$$$?%7%j%+7O%,%9%P%j%"Kl$N:n@=$H%,%9F)2aB.EY$NB,Dj(B
($B5~Bg9)(B) ($B3X(B)$B!{BgDE(B $B7<9,(B$B!&(B ($B3X(B)$BC]ED(B $B0M2C(B$B!&(B ($B@5(B)$B2O@%(B $B85L@(B		plasma CVD
silica-based film
gas barrier
O
758$BD6NW3&Fs;@2=C:AG$rMQ$$$?;@2=E4GvKl$N:n@.(B
($B:eI\Bg1!(B) ($B3X(B)$B!{3Q(B $B2E?M(B$B!&(B ($B:eI\Bg(B) ($B3X(B)$BEaG)(B $B@5Mx(B$B!&(B ($B:eI\Bg1!(B) ($B@5(B)$B2,K\(B $B>0$B!&(B ($B@5(B)$BsnF#(B $B>f{J(B$B!&(B ($B@5(B)$B6aF#(B $BOBIW(B$B!&(B ($BElKLBgB?858&(B) ($B@5(B)$B9b8+(B $B@?0l(B		supercritical CO2
FeRAM
iron oxide
O
767$BG.(BCVD $BK!$G:n@=$7$?;@2=0!1tGvKl$NFC@-(B
($BEl3$Bg1!9)(B) ($B3X(B)$B!{9uED(B $B?88c(B$B!&(B ($BEl3$Bg9)(B) $B5WJ](B $B;K9a(B$B!&(B $B2#;3(B $BM%5.(B$B!&(B $BEOn5(B $B2m=S(B$B!&(B ($BEl3$Bg1!9)(B) $BBg5WJ](B $BC#@8(B$B!&(B ($B@5(B)$B=);3(B $BBY?-(B		CVD
Zinc oxide
transparent conductive film
O
787p$B7?%@%$%d%b%s%I>e$K(BEB$B>xCeK!$G7A@.$7$?(BTi$B2=9gJ*(B/Pt/Au$BEE6K$N(BTLM$BI>2A(B
($B:eI\Bg1!9)(B) ($B3X(B)$B!{NkLZ(B $BAo0lO:(B$B!&(B ($B@5(B)$B2,K\(B $B>0$B!&(B ($B@5(B)$BsnF#(B $B>f{J(B$B!&(B ($B@5(B)$B6aF#(B $BOBIW(B$B!&(B ($B;:Am8&(B) $B>>K\(B $BMc(B$B!&(B $BKRLn(B $B=S@2(B$B!&(B $B>.AR(B $B@/I'(B$B!&(B $B2CF#(B $BCh8w(B$B!&(B $BC]Fb(B $BBgJe(B$B!&(B $B;3:j(B $BAo(B$B!&(B $BBg6z(B $B=(@$(B		diamond
contact resistance
electron beam evaporated
O
815$B%W%i%:%^(BCVD$BK!$G:n@=$7$?%7%j%+Kl$N2=3X9=B$$HKlFC@-(B
($B5~Bg9)(B) ($B3X(B)$B!{C]ED(B $B0M2C(B$B!&(B ($B3X(B)$B=P8}(B $BMx$B!&(B ($B3X(B)$BBgDE(B $B7<9,(B$B!&(B ($B@5(B)$B2O@%(B $B85L@(B		plasma CVD
chemical structure
film properties
O
827CVD$B$K$h$k&A(B-Al2O3$BGvKl$NG[8~@-@)8f(B
($BElBg9)(B) ($B3X(B)$B!{@>_7(B $B7E(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B5~%;%i(B) $BC+^<(B $B1I?N(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BAz3@(B $B9,9@(B		CVD
Al2O3
crystal-orientation
O
840$B1vAG(B-$B%1%$AG4^2=9gJ*$rMQ$$$?(BCVD$B$G$N2
($BElBg1!9)(B) ($B3X(B)$B!{:4F#(B $BEP(B$B!&(B ($B3X(B)$BEh(B $B9IJ?(B$B!&(B ($B3X(B)$BgULg(B $BM$0l(B$B!&(B $B?y1:(B $B=(=S(B$B!&(B ($B3X(B)$BCf86(B $BBsLi(B$B!&(B (IHI$B4pHW8&(B) ($B@5(B)$BJ!Eg(B $B9/G7(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B3X0L$B!&(B ($BElBg1!9)(B) ($B@5(B)$BAz3@(B $B9,9@(B		silicon-chlorine compounds
by-products
elementary reaction simulation
O
861$BHy:Y%H%l%s%A$K$*$1$k@=KlJ*
($BElBg1!9)(B) ($B3X(B)$B!{gULg(B $BM$0l(B$B!&(B ($B3X(B)$BEh(B $B9IJ?(B$B!&(B ($B3X(B)$B:4F#(B $BEP(B$B!&(B $B?y1:(B $B=(=S(B$B!&(B ($B3X(B)$BCf86(B $BBsLi(B$B!&(B (IHI$B4pHW8&(B) ($B@5(B)$BJ!Eg(B $B9/G7(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B		reactivity analysis
fine trench
Chemical Vapor Deposition
O
897$B0[$J$kC:AG8;$rMQ$$$?%W%i%:%^(BCVD$B$K$h$k%+!<%\%s%J%N%&%)!<%k$N9g@.$H$=$NFC@-I>2A(B
($BEl9)Bg1!M}9)(B) ($B3X(B)$B!{?7@n(B $BBg$B!&(B ($B@5(B)$B?9(B $B?-2p(B		carbon nanowall
carbon monoxide
O
$B9V1i?=$79~$_0lMw(B($B%7%s%]%8%&%`HV9f!&9V1iJ,N`HV9fJL(B)
$B
$B2=3X9)3X2q(B $BBh(B47$B2s=)5(Bg2q(B
(C) 2016 $B8x1W
Most recent update: 2016-01-20 13:09:01
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