$B:G=*99?7F|;~!'(B2012-02-09 09:17:01
$B$3$NJ,N`$G$h$/;H$o$l(B $B$F$$$k%-!<%o!<%I(B | $B%-!<%o!<%I(B | $B | |
---|---|---|---|
chemical vapor deposition | 3$B7o(B | ||
carbon nanotubes | 2$B7o(B | ||
thin film | 2$B7o(B | ||
CVD | 2$B7o(B | ||
conductive oxide | 1$B7o(B |
$B | $B9V1iBjL\!?H/I=$B%-!<%o!<%I(B | $B | |
---|---|---|---|
52 | SiC-CVD$B%W%m%;%9H?1~5!9=$N%^%k%A%9%1!<%k2r@O(B(2) | Silicon Carbide CVD Reaction Kinetics | 11/29 20:15:20 |
248 | Ni-Fe$B7OAX>uJ#?e;@2=J*%J%NN3;R$r?(G^A06nBN$KMQ$$$?%+!<%\%s%J%N%3%$%k$N9g@.(B | carbon nanocoil chemical vapor deposition layered double hydroxide | 12/8 09:48:17 |
303 | $B%3%P%k%H%;%s$H%"%s%b%K%"2rN% | Hot-wire ALD exhaust gas | 12/8 17:33:21 |
321 | $B6/<'@-6bB0$N%(%C%A%s%0A*Br@-$K5Z$\$9J|EE>r7o$N1F6A(B | plasma etching transition metal CCP | 12/8 19:37:03 |
326 | Fabrication of a-C:H thin film by Atmospheric Pressure Plasma Jet for Liquid Crystal Alignment | Atmospheric Pressure Plasma Jet Liquid Crystal alignment Thin film deposition | 12/8 19:57:48 |
416 | $B0[$J$kC:AG86NA$rMQ$$$?(BPECVD$BK!$G$N(BTi$B7O9E | film growth chemical vapor deposition titanium carbide | 12/9 13:52:59 |
542 | $BC1AX%+!<%\%s%J%N%A%e!<%V$N2P1j9g@.(B | carbon nanotubes flame synthesis catalytic chemical vapor deposition | 12/9 17:57:20 |
548 | $BIbM7?(G^(BCVD$BK!$K$h$kC1AX%+!<%\%s%J%N%A%e!<%V$N9g@.$H9=B$@)8f(B | carbon nanotubes chemical vapor deposition catalyst | 12/9 18:01:18 |
565 | $B5.6bB0%U%j!<;@2=J*EE6K$rMQ$$$?6/M6EEBN%-%c%Q%7%?$N:n@=$HI>2A(B | ferroelectric material pulsed laser deposition conductive oxide | 12/9 18:28:02 |
602 | $BD6NW3&Fs;@2=C:AGCf$G$N6bB0;@2=J*GvKl7A@.$HH?1~5!9=2r@O(B | supercritical carbon dioxide metal oxide thin film | 12/9 19:34:17 |
657 | [$BJ,2J2q>)Ne>^(B]CVD$BH?1~J,2J2q>)Ne>^^<0(B | CVD reaction enginnering encouraging prize | 12/9 21:26:09 |
666 | $B5$8G86NA(BCVD$B$K$h$kJ#9gKl9g@.>r7o$N8!F$(B | thin film nanoparticle composite material | 12/9 21:53:38 |