
| Time | Prog. No. | Title/Author(s) | Keywords | Topics code | ACKN No. |
|---|---|---|---|---|---|
| Chemical reaction engineering | |||||
| (9:20-10:20) (Chairperson T. Saito) | |||||
| O202 | (JPN) Construction of elementary reaction mechanism of decomposition of methyltrichlorosilane for SiC-CVD process | SiC CVD reaction mechanism | 5-h | 174 | |
| O203 | (JPN) Kinetic studies on SiC-CVD process using outlet gas analysis | CVD Silicon carbide reaction kinetics | 5-h | 180 | |
| O204 | (JPN) Fabrication of large-grain crystalline silicon thin films for solar cells by rapid vapor deposition | physical vapor deposition silicon thin films large grains | 5-h | 56 | |
| (10:20-11:40) (Chairperson S. Noda) | |||||
| O205 | (JPN) The effects of chloromethane addition on SiC-CVD process | CVD SiC | 5-h | 176 | |
| O206 | (JPN) The effects of hydrocarbon addition on SiC-CVD process | Silicon carbide CVD Reaction kinetics | 5-h | 130 | |
| O207 | (JPN) Low-temperature fabrication process of CuInSe2 film for solar cells by using supercritical fluid | Solar Cell Supercritical Fluid CuInSe2 | 5-h | 62 | |
| O208 | (JPN) Fabrication of compound semiconductor film for solar cell via supercritical fluid selenization using SeO2 | Solar Cell Supercritical Fluid CuInSe2/Cu2ZnSnSe4 | 5-h | 146 | |
| (11:40-12:00) (Chairperson Y. Shimogaki) | |||||
| O209 | (JPN) Awards ceremony for encouraging prize of CVD reactions section | CVD reaction enginnering encouraging prize | 5-h | 42 | |
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