$B9V1i(B $B;~9o(B | $B9V1i(B $BHV9f(B | $B9V1iBjL\!?H/I=$B%-!<%o!<%I(B | $BJ,N`(B $BHV9f(B | $B$BHV9f(B | |
$BH?1~9)3X(B |
(9:20$B!A(B10:20)$B!!(B($B:BD9(B $BsnF#(B $B>f{J(B) |
9:20$B!A(B 9:40 | O202 | SiC-CVD$B%W%m%;%9$K$*$1$k(BMTS$BJ,2rAGH?1~%a%+%K%:%`$N9=C[(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B:4F#(B $BEP(B $B!&(B ($B3X(B)$BgULg(B $BM$0l(B $B!&(B ($B3X(B)$BJ!Eg(B $B9/G7(B $B!&(B ($B3X(B)$B?y1:(B $B=(=S(B $B!&(B (IHI$B4pHW8&(B) $BJ]8MDM(B $B>?(B $B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B $B!&(B ($B@5(B)$BAz3@(B $B9,9@(B | SiC CVD reaction mechanism
| 5-h | 174 |
9:40$B!A(B 10:00 | O203 | $B=P8}%,%9J,@O$rMQ$$$?(BSiC-CVD$B%W%m%;%9$NH?1~5!9=2r@O(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BgULg(B $BM$0l(B $B!&(B ($B3X(B)$B:4F#(B $BEP(B $B!&(B ($B3X(B)$BJ!Eg(B $B9/G7(B $B!&(B ($B3X(B)$B?y1:(B $B=(=S(B $B!&(B (IHI$B4pHW8&(B) $BJ]8MDM(B $B>?(B $B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B $B!&(B ($B@5(B)$BAz3@(B $B9,9@(B | CVD Silicon carbide reaction kinetics
| 5-h | 180 |
10:00$B!A(B 10:20 | O204 | $B5^B.>xCeK!$K$h$kB@M[EECSMQBgN37B7k>=%7%j%3%sGvKl$N:n@=(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BW"ED(B $B9,M4(B $B!&(B ($BH>0l(B) $B@P66(B $B7r0l(B $B!&(B ($BElBg1!9)(B) ($B@5(B)$BDT(B $B2B;R(B $B!&(B ($BAaBg@h?JM}9)(B) ($B@5(B)$BLnED(B $BM%(B | physical vapor deposition silicon thin films large grains
| 5-h | 56 |
(10:20$B!A(B11:40)$B!!(B($B:BD9(B $BLnED(B $BM%(B) |
10:20$B!A(B 10:40 | O205 | SiC-CVD$B@=B$%W%m%;%9$K$*$1$k86NA%,%9$X$N1v2=%a%A%kE:2C8z2L(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B?y1:(B $B=(=S(B $B!&(B ($B3X(B)$B:4F#(B $BEP(B $B!&(B ($B3X(B)$BJ!Eg(B $B9/G7(B $B!&(B ($B3X(B)$BgULg(B $BM$0l(B $B!&(B (IHI$B4pHW8&(B) $BJ]8MDM(B $B>?(B $B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B $B!&(B ($B@5(B)$BAz3@(B $B9,9@(B | CVD SiC
| 5-h | 176 |
10:40$B!A(B 11:00 | O206 | SiC-CVD$B%W%m%;%9$X$NC:2=?eAG%,%9E:2C8z2L(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BJ!Eg(B $B9/G7(B $B!&(B ($B3X(B)$BgULg(B $BM$0l(B $B!&(B ($B3X(B)$B:4F#(B $BEP(B $B!&(B ($B3X(B)$B?y1:(B $B=(=S(B $B!&(B (IHI$B4pHW8&(B) $BJ]8MDM(B $B>?(B $B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B $B!&(B ($B@5(B)$BAz3@(B $B9,9@(B | Silicon carbide CVD Reaction kinetics
| 5-h | 130 |
11:00$B!A(B 11:20 | O207 | $BD6NW3&N.BN$rMQ$$$?B@M[EECSMQ(BCuInSe2$B$NDc29@=Kl%W%m%;%9(B
($BElKLBgB?858&(B) $B!{(B($B3X(B)$BLpCf(B $BH~5*(B $B!&(B $BEOJU(B $B?-;J(B $B!&(B ($B@5(B)$Bcx5o(B $B9bL@(B $B!&(B ($B@5(B)$BK\4V(B $B3J(B | Solar Cell Supercritical Fluid CuInSe2
| 5-h | 62 |
11:20$B!A(B 11:40 | O208 | SeO2$B$rMQ$$$?D6NW3&N.BN%;%l%s2=%W%m%;%9$K$h$kB@M[EECS2=9gJ*H>F3BNGvKl$N:n@=(B
($BElKLBgB?858&(B) $B!{(B($B3X(B)$BCf0B(B $BM4B@(B $B!&(B ($B3X(B)$BLpCf(B $BH~5*(B $B!&(B ($B@5(B)$Bcx5o(B $B9bL@(B $B!&(B ($B@5(B)$BK\4V(B $B3J(B | Solar Cell Supercritical Fluid CuInSe2/Cu2ZnSnSe4
| 5-h | 146 |
(11:40$B!A(B12:00)$B!!(B($B;J2q(B $BAz3@(B $B9,9@(B) |
11:40$B!A(B 12:00 | O209 | [$BJ,2J2q>)Ne>^(B]CVD$BH?1~J,2J2q>)Ne>^^<0(B
($BElBg1!9)(B/$BBgM[F|;@(B) $B!{(B($B@5(B)$B@6?e(B $B=(<#(B $B!&(B ($BElKLBgB?858&(B) ($B3X(B)$BLpCf(B $BH~5*(B $B!&(B ($BElBg1!9)(B) ($B3X(B)$B>.:d(B $B>;51(B | CVD reaction enginnering encouraging prize
| 5-h | 42 |