SCEJ 80th Annual Meeting (Tokyo, 2015): List of the applications (topics)

`SCEJ 80th Annual Meeting (Tokyo, 2015)`

List of received applications (By topics code)

5) Chemical reaction engineering

5-h. CVD & dry processes

Most recent update: 2015-07-10 15:24:01

The keywords that frequently used in this toopics code.	Keywords	Number
	CVD	6
	SiC	3
	diamond	2
	Chemical vapor deposition	2
	Silicon	2
	Lithium secondary battery	2
	Evaporation	2
	Zinc oxide	2
	graphene	2
	Thin film	2
	electron beam evaporated	1

ACKN No.	Title/Author(s)	Keywords	Style
175	Direct formation and structure control of few-layer graphene on dielectric substrates by etching-precipitation method (Waseda U.) *Akiba Sachie, (U. Tokyo) Kosaka Masaki, (Waseda U.) Hasegawa Kei, Noda Suguru	graphene crystal growth dry-etching	P
178	Preparation of metal oxide layer on carbon nanotubes by in-flight coating (Hiroshima U.) *Kubo Masaru, Kadomura Hirofumi, Shimada Manabu	Plasma enhanced chemical vapor deposition Composite materials Film formation	O
302	Synthesis of carbon nanotubes on powders by fluidized bed and their total collection by gas flow (Waseda U.) *Hachiya Soichiro, Kawabata Kosuke, Chen Zhongming, Hasegawa Kei, Osawa Toshio, Noda Suguru	carbon nanotubes fluidized bed chemical vapor deposition	P
303	Effects of hydrogen addition on silica film growth by plasma CVD (Kyoto U.) *Takeda E., Deguchi T., Kawase M.	Plasma CVD silica hydrogen addition	O
305	Doping and de-doping processes of various carbon nanomaterials with Br₂ for their resistivity control (Waseda U.) *Takabatake Mami, Hasegawa Kei, Osawa Toshio, Noda Suguru	graphene carbon nanotube doping	P
450	Chemical vapor deposition rate of pyrolytic carbon from aromatic hydrocarbons (Kyoto U.) *Baba S., Iwai T., Nagata K., Kawase M.	Chemical vapor deposition Pyrolysis Carbon	P
462	Preparation of zinc oxide thin film by the CVD method using the zinc acetylacetonate. (Tokai U.) *Misawa Kyosuke, Nakamura Yusuke, Tazawa Takumi, Morita Masahito, Akiyama Yasunobu	CVD thin film zinc oxide	P
465	Evaluation of the step coverage of the ZnO thin films prepared by using the APCVD method (Tokai U.) *Hayakawa Hisashi, Yamanashi Toshihiro, Kataoka Takahiro, Kanamori Mizuya, Akiyama Yasunobu	CVD Zinc oxide Thin film	P
510	Rapid vapor deposition of Cu films and application to electrodes for lithium secondary batteries (Waseda U.) *Aoi Shigeki, Hasegawa Kei, Osawa Toshio, Monma Toshiyuki, Osaka Tetsuya, Noda Suguru	Rapid vapor deposition Cu lithium secondary batteries	P
518	Gass-phase synthesis of Si nanoparticles and fabrication of three-dimensional thick electrodes for lithium secondary batteries (Waseda U.) *Kowase Takayuki, Hasegawa Kei, Osawa Toshio, Monma Toshiyuki, Osaka Tetsuya, Noda Suguru	Lithium secondary battery Evaporation Silicon	P
564	Multi-scale analysis of SiC-CVD from trimethylchlorosilane (U. Tokyo) *Sugiura Hidetoshi, Shima Kohei, Sato Noboru, Funato Yuichi, (IHI) Fukushima Yasuyuki, (U. Tokyo) Momose Takeshi, Shimogaki Yukihiro	SiC CVD trimethylchlorosilane	P
616	Direct deposition of Si particle films on current collectors for lithium secondary batteries (Waseda U.) *Morikawa Yusuke, Hasegawa Kei, Osawa Toshio, Monma Toshiyuki, Osaka Tetsuya, Noda Suguru	Lithium secondary battery Evaporation Silicon	P
657	Construction of the overall reaction model for opitmizing SiC-CVD using Methyltrichlorosilane (U. Tokyo) *Funato Y., Sato N., Shima K., Fukushima Y., Sugiura H., Momose T., Shimogaki Y.	Overall reaction model SiC CVD	O
672	Study on the Sticking Probability of SiC-CVD Species Using Methyltrichlorosilane (3) (U. Tokyo) *Shima K., Sato N., Funato Y., Sugiura H., (IHI) Fukushima Y., (U. Tokyo) Momose T., Shimogaki Y.	CVD SiC methyltrichlorosilane	O
747	Controls of diamond growth rate ratio ([100]/[111]) and morphology by direct current plasma chemical vapor deposition (Osaka Pref. U.) *Yukawa H., Nezaki M., Nakata K., Okamoto N., Saito T., Kondo K., (AIST) Yamasaki S., Okushi H.	CVD diamond plasma	P
785	Contact resistance evaluation of electron beam evaporated TiCN/Pt/Au electrode on p-type diamond by transmission line model (Osaka Pref. U.) *Suzuki S., Nezaki M., Okamoto N., Saito T., Kondo K., (AIST) Matsumoto T., Makino T., Ogura M., Kato H., Takeuchi D., Yamasaki S., Okushi H.	diamond contact resistance electron beam evaporated	P
809	The ferroelectric and piezoelectric properties of ferroelectric films by PLD (Osaka Pref. U.) *Amano T., Takada Y., Okamoto N., Saito T., Kondo K., Yoshimura T., Fujimura N., (ISIR, Osaka U.) Higuchi K., Kitajima A.	ferroelectric properties pulsed laser deposition piezoelectric properties	P
838	Reaction analysis of InGaN-MOVPE using the new nitride precursor (U. Tokyo) *Suzuki Y., Momose T., (ALL) Teramoto T., Dussarrat C., (U. Tokyo) Sugiyama M., Shimogaki Y.	InGaN reaction analysis Qmass	P

List of received applications (By topics code)

List of received applications
SCEJ 80th Annual Meeting (Tokyo, 2015)

(C) 2015 The Society of Chemical Engineers, Japan. The Society of Chemical Engineers, Japan. All rights reserved.
Most recent update: 2015-07-10 15:24:01
For more information contact Organizing Committee, SCEJ 80th Annual Meeting (Tokyo, 2015)
E-mail: inquiry-80a

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