SCEJ

$B2=3X9)3X2q(B $BBh(B39$B2s=)5(Bg2q(B

$B9V1i%W%m%0%i%`!J2q>l!&F|DxJL!K(B

L$B2q>l(B $BBh(B3$BF|(B

$B:G=*99?7F|;~!'(B2007-07-24 09:36:53
$B9V1i(B
$B;~9o(B		$B9V1i(B
$BHV9f(B		$B9V1iBjL\!?H/I=$B%-!<%o!<%I(B$BJ,N`(B
$BHV9f(B		$B$BHV9f(B
$B%7%s%]%8%&%`(B $B!c(BCVD$B!&%I%i%$%W%m%;%9!d(B
(9:00$B!A(B10:00)$B!!(B($B:BD9(B $B6LCVD>
9:00$B!A(B 9:20L301$B%7%j%3%sI=LL$K$*$1$kM-5!J*J,;R5[CeC&N%5sF0$N$=$N>l4Q;!(B
($B2#9qBg1!9)(B) $B!{(B($B@5(B)$B1)?<(B $BEy(B$B!&(B$B;320(B $BBgJe(B		Silicon
Organic compound
adsorption
S-35168
9:20$B!A(B 9:40L302InGaAsP$B7O(BMOVPE$B$K$*$1$k(BV$BB25[C&CeB.EY$H8GAjAH@.(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B54DM(B $BN4M4(B$B!&(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B$BCfLn(B $B5A><(B		MOVPE
Crystal Growth
Simulation
S-35769
9:40$B!A(B 10:00L303GaAs$B$*$h$S(BInP$B$N(BMOVPE$B$K$*$1$kI=LL5[CeAX$NB.EY2aDxHf3S(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B=P1:(B $BEm;R(B$B!&(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B		MOVPE
Surface adsorption layer
kinetics
S-35790
(10:00$B!A(B11:00)$B!!(B($B:BD9(B $B1)?<(B $BEy(B)
10:00$B!A(B 10:20L304$B9bB.2sE>7?(BCVD$BAuCV$rMQ$$$?(BGaAs$B@.D9%W%m%;%9$K$*$1$k(BH2/N2$B:.9g%,%9%-%c%j%"$N1F6A(B
($BEl$B!&(B($B@5(B)$B1'0f(B $BL@@8(B$B!&(B($B@5(B)$B6LCV(B $BD>		MOCVD
CHEMKIN
rapid rotation reactor
S-35587
10:20$B!A(B 10:40L305$BA*Br@.D9%W%m%U%!%$%k2r@O$K$h$k(BInP,InAs-MOVPE$B@.D9$NB.EYO@(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B2&(B $B1@K2(B$B!&(B($B@5(B)$BAW(B $B3$@/(B$B!&(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B$B!&(B($BElBg1!9)(B) ($B@5(B)$BAz3@(B $B9,9@(B		InP/InAs-MOVPE
Selective area growth
Kinetics
S-35687
10:40$B!A(B 11:00L306MOVPE$B$K$*$1$kI=LLH?1~B.EY$HI=LL86;R9=B$$N4X78(B
($BElBg9)(B) $B!{(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($B3X(B)$B=P1:(B $BEm;R(B$B!&(B($B@5(B)$BAW(B $B3$@/(B$B!&(B($B3X(B)$B2&(B $B1>K2(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B$B!&(B($BElBg9)(B) ($B@5(B)$BAz3@(B $B9,9@(B		MOVPE
surface reaction rate
surface reconstruction
S-35820
(11:00$B!A(B12:00)$B!!(B($B:BD9(B $BsnF#>fLw(B)
11:00$B!A(B 11:20L307$BBg7?(BCVD$BH?1~O'$K$h$k(BBN$B%;%i%_%C%/%99g@.(B
($B:eBg4p9)(B) $B!{(B($B3X(B)$BF#0f(B $B@6Mx(B$B!&(B($B:e4p9)(B) ($B@5(B)$B@>;3(B $B7{OB(B$B!&(B($B@5(B)$B9>F,(B $BLw9,(B$B!&(B($B@5(B)$B>e;3(B $B0T0l(B		Pyrolitic Boron Nitride
CVD
Crystal growth
S-35337
11:20$B!A(B 12:00L308[$BE8K>9V1i(B] 4H-SiC$BMQ9bB.(BCVD$BO'$N3+H/%3%s%;%W%H(B
($B;:Am8&(B) $B!{@PED(B $BM<5/(B		4H-SiC homo-epitaxial growth
Chemical vapor deposition
High-rate growth
S-35424
(13:00$B!A(B14:00)$B!!(B($B:BD9(B $B6aF#1Q0l(B)
13:00$B!A(B 13:20L313$B%Q%k%9%$%s%8%'%/%7%g%sJ}<0$K$h$k9bIJ
($BElBg1!9)(B) $B!{(B($B3X(B)$BNB(B $B@5>5(B$B!&(BSodabanulu Hassanet$B!&(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B$B!&(B($BElBg1!9)(B) ($B@5(B)$BAz3@(B $B9,9@(B		Pulse injection method
GaN
MOVPE
S-35755
13:20$B!A(B 13:40L314$B%Q%k%9%$%s%8%'%/%7%g%s$rMQ$$$?(BInP$B$NA*Br(BMOVPE$B@.D9$K$*$1$kCo@.D9$NM^@)(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BC+(B $BOB$B!&(B($B3X(B)$B=P1:(B $BEm;R(B$B!&(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B$BCfLn(B $B5A><(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B		abnormal growth
Pulse Injection
SA-MOVPE
S-35387
13:40$B!A(B 14:00L315$B%A%?%s;@%9%H%m%s%A%&%`GvKl$N%(%T%?%-%7%c%k@.D9>r7o(B
($BEl3$Bg1!9)(B) $B!{(B($B@5(B)$B=);3(B $BBY?-(B$B!&(B$BB<>e(B $BGn;K(B$B!&(B$B2$B!&(B$B@nEg(B $BCN;j(B		CVD
Epitaxial Growth
Strontium Titanate
S-35147
(14:00$B!A(B15:00)$B!!(B($B:BD9(B $B0K86(B $B3X(B)
14:00$B!A(B 14:20L316$B%Q%k%9J|EE%W%i%:%^$K$h$k(BTiO2$B$NItJ,4T85$*$h$S$=$NFC@-I>2A(B
($BEl9)Bg(B) $B!{(B($B3X(B)$Bhq(B $B=a\](B$B!&(B($B@5(B)$B?9(B $B?-2p(B$B!&(B($B@5(B)$BNkLZ(B $B@5><(B		partial reduction
TiO2
plasma
S-35960
14:20$B!A(B 14:40L317TiO2$BCf6uN3;R$X$N(BPLD$BK!$K$h$k6bB0C4;}(B
($B:eI\Bg9)(B) $B!{(B($B3X(B)$B9g@n(B $B1QCK(B$B!&(B($B002=@.(B) ($B@5(B)$B?y2,(B $B98;R(B$B!&(B($B5~Bg9)(B) ($B@5(B)$BD9Nf(B $B?.Je(B$B!&(B($B:eI\Bg9)(B) ($B@5(B)$BDE5W0f(B $BLP		TiO2 hollow particle
PLD
metal support
S-35982
14:40$B!A(B 15:00L318$BD6NW3&Fs;@2=C:AGN.BN$rMxMQ$7$?(BTi$B;@2=J*GvKl$NCJ:9HoJ$@.Kl(B
($B>eCRBgM}9)(B) $B!{(B($B@5(B)$BFbED(B $B42(B$B!&(B$B2CG<(B $BIYM3$B!&(B($B@5(B)$BM30f(B $BOB;R(B$B!&(B($B@5(B)$B9,ED(B $B@60lO:(B		supercritical carbon dioxide
thin film
titanium oxide
S-35499
(15:00$B!A(B16:00)$B!!(B($B:BD9(B $B=);3BY?-(B)
15:00$B!A(B 15:20L319$BD6NW3&N.BN$rMQ$$$?(BULSI$BHy:Y9&$X$N(BCu$BKd$a9~$_(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BI4@%(B $B7r(B$B!&(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B		Gap-filling
Supercritical Fluid
Cu
S-35848
15:20$B!A(B 15:40L320$B;@2=4T85$rMxMQ$7$?(BULSI-Cu$BG[@~7A@.MQ(BCVD$B%W%m%;%9$NB.EYO@(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B?\:4(B $B7=M:(B$B!&(B$B6b(B $B7.(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B		CVD
step coverage
Cu oxide
S-35452
15:40$B!A(B 16:00L321$BG.%U%#%i%a%s%H?eAG%i%8%+%k%=!<%9$K$h$k(BCu$BGvKl2~
($B;3M|Bg(B) $B!{(B($B@5(B)$B6aF#(B $B1Q0l(B$B!&(B$B?<_7(B $B??Li(B		hot filament
hydrongen radial
cu thin films
S-35967
$B9V1i%W%m%0%i%`(B
$B2=3X9)3X2q(B $BBh(B39$B2s=)5(Bg2q(B
(C) 2007 ($B
Most recent update: 2007-07-24 09:36:53
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