SCEJ

$B2=3X9)3X2q(B $BBh(B41$B2s=)5(Bg2q(B

$B9V1i%W%m%0%i%`!J2q>l!&F|DxJL!K(B

A$B2q>l(B $BBh(B1$BF|(B

$B:G=*99?7F|;~!'(B2009-09-07 16:36:42
$B9V1i(B
$B;~9o(B		$B9V1i(B
$BHV9f(B		$B9V1iBjL\!?H/I=$B%-!<%o!<%I(B$BJ,N`(B
$BHV9f(B		$B$BHV9f(B
$B%7%s%]%8%&%`(B $B!c(BCVD$B!&%I%i%$%W%m%;%9%7%s%]%8%&%`!!!]%G%P%$%99=B$!&5!G=@)8f$NH?1~9)3X!]!d(B
(10:00$B!A(B11:00)$B!!(B($B:BD9(B $B1)?<(B $BEy(B)
10:00$B!A(B 10:20A104InGaN/GaN$BA*Br(BMOVPE$B$K$h$k2D;k8wH/8wGHD9%7%U%H$N%a%+%K%:%`(B
($BElBg9)(B) $B!{(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($B3X(B)$B1vED(B $BNQLi(B$B!&(B$BIYED(B $BM45.(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B		MOVPE
InGaN
$BA*Br@.D9(B
S-45943
10:20$B!A(B 10:40A105$BHy>.NN0hA*Br(BMOVPE$B$K$*$1$k(BSi$B>e(BInGaAs$B$N86;R9=B$$H8w3XFC@-2r@O(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B=P1:(B $BEm;R(B$B!&(B($B3X(B)$B6aF#(B $B2B9,(B$B!&(B$B@10f(B $BBsLi(B$B!&(B$BC]Cf(B $B=<(B$B!&(B$B9bLZ(B $B?.0l(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B$B!&(B($BElBg1!9)(B) ($B@5(B)$B?y;3(B $B@5OB(B		MOVPE
InGaAs
heteroepitaxy
S-45858
10:40$B!A(B 11:00A106$B?75,%1%_%9%H%j$K$h$k;@2=%"%k%_%K%&%`GvKl$N(BCVD$B9g@.$HJ*@-I>2A(B
($BElBg9)(B) $B!{(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B$B2?(B $B9d(B$B!&(B$B2&(B $B6GN<(B$B!&(B$BK-ED(B $BCR;K(B$B!&(B$BHxEh(B $B@5<#(B		Al2O3
CVD
XPS
S-45498
(11:00$B!A(B12:00)$B!!(B($B:BD9(B $BsnF#(B $B>f{J(B)
11:00$B!A(B 11:20A107$B%Q%k%9DLEE2CG.$K$h$k(BCNT$B%U%#!<%k%I%(%_%C%?$N=V4V
($BElBg1!9)(B) $B!{(B($B@5(B)$B4X8}(B $B9/B@O:(B$B!&(B($BBgF|K\%9%/%j!<%s(B) ($B@5(B)$B8E;T(B $B9M$B!&(B($BElBg1!9)(B) ($B@5(B)$BGrD;(B $BMN2p(B$B!&(B($B3X(B)$B?yL\(B $B91;V(B$B!&(B($B@5(B)$BLnED(B $BM%(B		carbon nanotubes
field emitters
chemical vapor deposition
S-45678
11:20$B!A(B 11:40A108$B<+8JAH?%2=%+!<%\%s%J%N%A%e!<%V%(%_%C%?!<%"%l%$$N:n@=$*$h$SEE3&EE;RJ|=PFC@-(B
($BElBg1!9)(B) $B!{(B($B@5(B)$BGrD;(B $BMN2p(B$B!&(B($BBgF|K\%9%/%j!<%s(B) $B8E;T(B $B9M$B!&(B($BElBg1!9)(B) ($B@5(B)$BLnED(B $BM%(B		Carbon nanotube
Self-organization
Field emission
S-45237
11:40$B!A(B 12:00A109$B%G%P%$%94pHD>e$G$N%+!<%\%s%J%N%A%e!<%V$N?bD>G[8~@.D9(B
($BElBg1!9)(B) $B!{(B($B@5(B)$BLnED(B $BM%(B$B!&(B($B3X(B)$BGr0f(B $B@;(B		carbon nanotubes
device substrates
chemical vapor deposition
S-45290
(13:00$B!A(B13:40)$B!!(B($B;J2q(B $BAz3@(B $B9,9@(B)
13:00$B!A(B 13:40A113[$BE8K>9V1i(B]TFT$B%W%m%;%95;=Q$N8=67$H>-MhE8K>(B
($B%7%c!<%W(B) $B!{;385(B $BNI9b(B		TFT
CVD
LCD
S-45455
(13:40$B!A(B15:00)$B!!(B($B:BD9(B $BLnED(B $BM%(B)
13:40$B!A(B 14:00A115$BH>F3BNB@M[EECS$X$N1~MQ$rL\;X$7$?6d%J%NN3;RJ,;6Kl$N8w3XFC@-(B
($BC:%(%M8&(B) $B!{(B($B3X(B)$BEDCf(B $BM$59(B$B!&(B$BH-B<(B $B9@FA(B$B!&(B($B@5(B)$B0K86(B $B3X(B		solar cell
nano-particles
surface plasmon
S-45470
14:00$B!A(B 14:20A116RF$B%W%i%:%^(BCVD$BK!$K$h$k@d1oKl$N7A@.$H6/M6EEBN$NNt2=J]8n8z2L(B
($B:eI\Bg1!9)(B) $B!{(B($B3X(B)$BOB@t(B $BMW(B$B!&(B($B3X(B)$BDT(B $BE0(B$B!&(B($B3X(B)$BW"ED(B $BM40lO:(B$B!&(B($B@5(B)$B2,K\(B $B>0$B!&(B($B@5(B)$BsnF#(B $B>f{J(B$B!&(B($B@5(B)$B6aF#(B $BOBIW(B$B!&(B$B5HB<(B $BIp(B$B!&(B$BF#B<(B $B5*J8(B		RF plasma CVD
ferroelectric film
encapsulation
S-45687
14:20$B!A(B 14:40A117AlP$B$*$h$S(BH2S$B$rMQ$$$?(BGaAs$BI=LL$N(BMOVPE$BH?1~O'Fb(Bin situ$B%Q%C%7%Y!<%7%g%s(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B;{ED(B $BM:5*(B$B!&(B($B3X(B)$B=P1:(B $BEm;R(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($BElBg@hC<8&(B) ($B@5(B)$BCfLn(B $B5A><(B		MOVPE
passivation
S-45825
14:40$B!A(B 15:00A118In-situ$BI=LL0[J}@-4Q;!$rMQ$$$?(BGaAs MOVPE$B@.D9$N9b86NA8zN(2=(B
($BElBg1!9)(B) $B!{(B($B@5(B)$B54DM(B $BN4M4(B$B!&(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B		MOVPE
Photovoltaics
In-situ monitoring
S-45846
(15:20$B!A(B16:00)$B!!(B($B:BD9(B $B0K86(B $B3X(B)
15:20$B!A(B 15:40A120MOVPE$BHy>.NN0hA*Br@.D9$K$*$1$k(BSi$B>e(BInAs$B3KH/@8$N@.D9>r7o0MB8@-(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B6aF#(B $B2B9,(B$B!&(B($B3X(B)$B=P1:(B $BEm;R(B$B!&(B$BC]Cf(B $B=<(B$B!&(B$B9bLZ(B $B?.0l(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B$B!&(B($BElBg1!9)(B) ($B@5(B)$B?y;3(B $B@5OB(B		MOVPE
InAs on Si
nucleation
S-45841
15:40$B!A(B 16:00A121$B%^%k%A%9%1!<%k2r@O$K$h$k(BGaN MOVPE$BH?1~%a%+%K%:%`$N8!F$(B
($BElBg9)(B) $B!{(B($B@5(B)$B?y;3(B $B@5OB(B$B!&(B$B0B2OFb(B $BM!(B$B!&(B($B3X(B)$B1vED(B $BNQLi(B$B!&(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B($BElBg@hC<8&(B) $BCfLn(B $B5A><(B		GaN
MOVPE
multi-scale analysis
S-45947
(16:00$B!A(B17:00)$B!!(B($B:BD9(B $B9b8+(B $B@?0l(B)
16:00$B!A(B 16:20A122$B%U%CAGHs4^M-86NA$K$h$k(BCu-CVD$B%W%m%;%9$NI>2A(B
($BElBg9)(B) $B!{(B($B@5(B)$BAz3@(B $B9,9@(B$B!&(B$BAW(B $B3$@/(B$B!&(B(APCI) Norman John		Cu-CVD
ULSI
Metallization
S-45484
16:20$B!A(B 16:40A123$B@.Kl$H%(%C%A%s%0$N6%9g$K$h$kHy:Y9&$NA*BrE*Kd$a9~$_5;=Q$N3+H/(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B9bLn(B $B=!0lO:(B$B!&(B($B@5(B)$BDT(B $B2B;R(B$B!&(B($B@5(B)$BLnED(B $BM%(B		chemical vapor deposition
Copper
selective filling
S-45637
16:40$B!A(B 17:00A124$BB?7k>=%3%P%k%H%7%j%5%$%IGvKl7A@.$K$*$1$k7k>=@.D9$NM}2r$H@)8f(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BDT(B $BM3$B!&(B($B@5(B)$BDT(B $B2B;R(B$B!&(B($B@5(B)$BLnED(B $BM%(B		cobalt disilicide
crystal growth
sputter deposition
S-45437
$B9V1i%W%m%0%i%`(B
$B2=3X9)3X2q(B $BBh(B41$B2s=)5(Bg2q(B
(C) 2009 ($B
Most recent update: 2009-09-07 16:36:42
For more information contact $B2=3X9)3X2q(B $BBh(B41$B2s=)5(Bg2q(B $BLd$$9g$;78(B
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