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| $BAz3@9,9@(B($BEl5~Bg(B)$B!$=);3BY?-(B($BEl3$Bg(B) |
CVD$B$d%9%Q%C%?!$%I%i%$%(%C%A%s%0$J$I$NGvKl7A@.!&HyN3;R9g@.!$Hy:Y2C9)$K$*$1$kH?1~%a%+%K%:%`$NM}2r$rDL$8!$%G%P%$%99=B$$r7A@.$7!$5!G=$rH/8=$5$;$kJ}K!O@$K$D$$$F5DO@$9$k$3$H$rL\E*$H$7$^$9!#8w!&EE;R%G%P%$%9!$(BMEMS$B!$%^%$%/%m%j%"%/%?$J$I$N7A@.$K$*$$$F!$I,MW$JGvKl$N9=B$$d5!G=$r7P83E*$K$G$O$J$/!$O@M}E*$K:GE,2=$9$k$?$a$NJ}K!O@$r5DO@$7$^$9!#C10l2q>l$G$N%7%s%]%8%&%`$H$9$k$3$H$G;22C
$B:G=*99?7F|;~!'(B2010-06-21 20:19:01
| $B$3$NJ,N`$G$h$/;H$o$l(B $B$F$$$k%-!<%o!<%I(B | $B%-!<%o!<%I(B | $B | |
|---|---|---|---|
| MOVPE | 4$B7o(B | | |
| GaAs | 2$B7o(B | | |
| nanoparticle | 2$B7o(B | | |
| carbon nanotubes | 2$B7o(B | | |
| deposition | 2$B7o(B | | |
| Zinc oxide | 2$B7o(B | | |
| ultrasonic spray pyrolysis | 2$B7o(B | | |
| thin film | 2$B7o(B | | |
| supercritical fluid | 2$B7o(B | | |
| synthesis | 1$B7o(B | | |
| $B | $B9V1iBjL\!?H/I=| $B%-!<%o!<%I(B | $B | |
|---|---|---|---|
| 5 | ULSI$BG[@~$N%-%c%C%WAXMQ?75,86NA$H%W%i%:%^(BCVD$B$K$h$k(BSiCH$BKl(B | Plasma Enhanced CVD low-k cap layer SiCH | 4/9 18:56:56 |
| 83 | [$BE8K>9V1i(B] $B%G%P%$%93+H/!&@8;:$rL\;X$7$?%W%i%:%^%W%m%;%9!&AuCV3+H/(B | $B%W%i%:%^(BCVD $B%W%i%:%^(BRIE $BH>F3BN%G%P%$%9(B | 4/20 20:17:02 |
| 96 | [$BE8K>9V1i(B] CVD$B%W%m%;%9$NJ,;RO@E*2rL@$K8~$1$FNL;R2=3X$N2L$?$9Lr3d(B | CVD$B%W%m%;%9(B $BNL;R2=3X7W;;(B $BCb2=J*H>F3BN(B | 4/21 12:18:55 |
| 176 | $BL5EE2r$a$C$-$K$h$k(BMWCNT/$B%K%C%1%kJ#9gBN$N:n@=(B | carbon nanotube electroless plating nickel | 4/23 16:19:24 |
| 183 | $B%+!<%\%s%J%NN3;RE:2CD62;GHJ.L8G.J,2rK!$K$h$kG3NAEECSN3;R:`NA$N9g@.(B | carbon nanopowder ultrasonic spray pyrolysis fuel cell | 4/23 17:17:20 |
| 189 | $BHs5.6bB0EE6K(B/$BJ]8n@d1oKl$K$h$k6/M6EEBN$NNt2=M^@)8z2L(B | ferroelectric material pulsed laser deposition zinc oxide | 4/23 17:45:33 |
| 190 | $BD6NW3&Fs;@2=C:AGCf$G$N6bB0;@2=J*GvKl7A@.$K$*$1$kE:2CJ*8z2L(B | supercritical carbon dioxide metal-oxide thin films device | 4/23 17:46:47 |
| 214 | $BBg7?H?1~4o$G$N(BGaAs$BA*Br(BMOVPE$B@.D9$N2r@O$H@)8f(B | GaAs MOVPE large scale reactor | 4/24 14:30:46 |
| 234 | SCFD$B$K$h$k(BPd$B@=Kl$K$*$1$k?75,1UBN4T85:^$N3+H/(B | SCFD liquid reducing agent palladium | 4/26 09:46:01 |
| 290 | $B%J%N:Y9&Fb$G$N2C?eJ,2rH?1~$K$h$k6bB0!$6bB0;@2=J*%J%NN3;R$N9g@.(B | nanoreactor nanoparticle rapid heating | 4/26 18:53:03 |
| 291 | Si$B%(%T%?%-%7%c%k9bB.@.D98~$1H?1~%b%G%k5Z$SH?1~%a%+%K%:%`$N2r@O(B | Si epitaxial Reaction mechanism Growth rate | 4/26 19:06:30 |
| 313 | $B%W%i%:%^(BCVD$BK!$rMQ$$$?%+!<%\%s%J%N%U%!%$%P!<$N4J0WNN0hA*Br9g@.%W%m%;%9$N3+H/(B | Plasma-enhanced CVD Carbon nanofiber Area-selective synthesis | 4/26 21:03:11 |
| 561 | $BD6NW3&N.BN$rMQ$$$?@d1o@-2 | Supercritical fluid Deposition Step coverage | 4/27 22:21:45 |
| 568 | $BHy>.NN0hA*Br(BMOVPE$B$rMQ$$$?(BSi$B>e(BInGaAs$B$N7A>u6Q0l2=$K8~$1$?(BSi$BI=LL>uBV$H(BInAs$B@.D9$N4X78(B | MOVPE heteroepitaxy InGaAs on Si | 4/27 22:49:26 |
| 601 | $BD6NW3&N.BN$rMQ$$$?(BSiO2$B@=Kl$K$*$1$kKd$a9~$_FC@-I>2A(B | supercritical fluid deposition SiO2 | 4/28 09:51:06 |
| 610 | $B8:05G.(BCVD$BK!$K$h$j:n@=$7$?;@2=0!1t$HFs;@2=%9%:GvKl$NEE5$FC@-(B | LPCVD Zinc oxide Tin oxide | 4/28 10:28:55 |
| 630 | $B@.D9NN0h69:u2=A*Br(BMOVPE$B$K$h$k(BSi$B>e(BInGaAs$B$N9b2#(B/$B=DHf@.D9(B | InGaAs MOVPE selctive area growth | 4/28 11:23:56 |
| 666 | $B%+!<%\%s%J%NN3;RE:2CJ.L8G.J,2rK!$K$h$k%U%'%i%$%H%J%NN3;R$N9g@.(B | synthesis ultrasonic spray pyrolysis ferrite | 4/28 12:36:45 |
| 794 | Microstructures and transparent conducting properties of self-organized networks of single-walled carbon nanotubes | carbon nanotubes self-organization transparent conducting properties | 4/28 16:05:46 |
| 797 | $BC1AX%+!<%\%s%J%N%A%e!<%V$N5$Aj9g@.$HH?1~@)8f(B | carbon nanotubes catalytic chemical vapor deposition gas-phase synthesis | 4/28 16:10:57 |
| 808 | $B9b86NA8zN((BGaAs-MOVPE$B$K$*$1$kIT=cJ*G;EY@)8f$HB@M[EECS1~MQ(B | MOVPE photovoltaics GaAs | 4/28 16:36:10 |
| 819 | $B%b%N%a%A%k%7%i%s$r86NA$H$9$k(BHotwire-CVD$B$K$h$k(BSiC$B@=Kl$NH?1~%7%_%e%l!<%7%g%s(B | CVD Silicon carbide Simulation | 4/28 16:52:43 |
| 838 | $B%J%N%/%i%9%?!<$N5$AjBO@Q$G7A@.$5$l$kGvKl9=B$$NI>2A(B | cluster nanostructure thin film | 4/28 17:28:59 |
| 843 | $BN3;R86NAF3F~%W%i%:%^(BCVD$BK!$K$h$k%J%NJ#9g:`NA$N9g@.(B | thin film nanoparticle nonequilibrium plasma | 4/28 17:34:33 |
(C) 2010 ($B
www3.scej.org
easp 2.28; update.pl 2.28 (C)1999-2009 kawase