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$B%7%s%]%8%&%`(B $B!c(BCVD$B!&%I%i%$%W%m%;%9!!!]9=B$!&5!G=@)8f$NH?1~9)3X!]!d(B
(9:20$B!A(B10:40)$B!!(B($B:BD9(B $BsnF#(B $B>f{J(B)
9:20$B!A(B 9:40G202SiC-CVD$B%W%m%;%9$X$N(BHCl$B%,%9E:2C8z2L(B
($BElBg1!9)(B) $B!{(B($B@5(B)$BJ!Eg(B $B9/G7(B $B!&(B $BgULg(B $BM$0l(B $B!&(B $B:4F#(B $BEP(B $B!&(B (IHI$B4pHW8&(B) $BJ]8MDM(B $B>?(B $B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B $B!&(B ($B@5(B)$BAz3@(B $B9,9@(B
CVD
SiC
QMS
S-899
9:40$B!A(B 10:00G203SiC-CVD$B%W%m%;%9$K$*$1$k5$AjH?1~7W;;(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B:4F#(B $BEP(B $B!&(B ($B3X(B)$BgULg(B $BM$0l(B $B!&(B ($B3X(B)$BJ!Eg(B $B9/G7(B $B!&(B (IHI$B4pHW8&(B) $BJ]8MDM(B $B>?(B $B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B $B!&(B ($B@5(B)$BAz3@(B $B9,9@(B
SiC
CVD
calculation
S-8484
10:00$B!A(B 10:20G204SiC-CVD$B%W%m%;%9H?1~5!9=2r@O$N$?$a$NG.J,2r5$Aj
($BElBg1!9)(B) $B!{(B($B3X(B)$BgULg(B $BM$0l(B $B!&(B ($B@5(B)$BJ!Eg(B $B9/G7(B $B!&(B ($B3X(B)$B:4F#(B $BEP(B $B!&(B (IHI$B4pHW8&(B) $BJ]8MDM(B $B>?(B $B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B $B!&(B ($B@5(B)$BAz3@(B $B9,9@(B
SiC
CVD
QMS
S-8148
10:20$B!A(B 10:40G205$BHs>=AGGvKl$NDc297A@.K!(B
($B2#9qBg1!9)(B) $BDECO(B $B2m4u(B $B!&(B $B0BF#(B $BM52p(B $B!&(B $B!{(B($B@5(B)$B1)?<(B $BEy(B
$BC:2=7>AG(B
CVD
$BDc29%W%m%;%9(B
S-88
(10:40$B!A(B12:00)$B!!(B($B:BD9(B $BCSED(B $B7=(B)
10:40$B!A(B 11:00G206[$B>7BT9V1i(B]$BH>F3BN%W%i%:%^%W%m%;%9AuCV$N%7%_%e%l!<%7%g%s5;=Q(B
($BEl5~%(%l%/%H%m%s;3M|(B) $B!{EAJu(B $B0l
semiconductor manufacturing equipment
plasma processing
numerical simulation
S-8419
11:00$B!A(B 11:20G207$B%W%i%:%^(BCVD$B$K$h$kJ.N.$rMQ$$$?(BSi$B@=Kl$HN.BN!&H?1~2r@O(B
($B4tIlBg1!9)(B) $B!{(B($B@5(B)$B@>ED(B $BE/(B $B!&(B $B2,K\(B $BD> $B!&(B $BCfB<(B $B $B!&(B $BEDCf(B $BD>Li(B $B!&(B $BLnB<(B $BM44u(B $B!&(B $BL6ED(B $B9@;J(B $B!&(B $B7*NS(B $B;VbCF,(B
CVD
$BGvKl(B
$B%7%j%3%s(B
S-8400
11:20$B!A(B 11:40G208$B%W%i%:%^(BCVD$BK!$K$h$k(BTiC$B7O9E2A(B
($B:eI\Bg1!9)(B) $B!{(B($B3X(B)$B@/2,(B $B90PR(B $B!&(B ($B:eI\Bg9)(B) $B>>K\(B $B:4OB;R(B $B!&(B ($B:eI\Bg1!9)(B) ($B@5(B)$B2,K\(B $B>0 $B!&(B ($B@5(B)$BsnF#(B $B>f{J(B $B!&(B ($B@5(B)$B6aF#(B $BOBIW(B $B!&(B ($B%"%k%F%C%/%9(B) $BRy(B $BCRFW(B
film growth
chemical vapor deposition
titanium carbide
S-8509
11:40$B!A(B 12:00G209$B%@%$%d%b%s%I%i%$%/%+!<%\%s@.KlMQ9b<~GH(BCH4$B%W%i%:%^$N%7%_%e%l!<%7%g%s(B
($B@iMU9)Bg(B) $B!{>.ED(B $B><5*(B $B!&(B ($BL>Bg9)(B) $B>e:d(B $BM5G7(B
diamond like carbon
plasma
simulation
S-8797
(13:00$B!A(B14:00)$B!!(B($B:BD9(B $BAz3@(B $B9,9@(B)
13:00$B!A(B 13:40G213[$BE8K>9V1i(B]$BD6DcB;=}Hy:Y2C9)%W%m%;%9$N%J%N%W%m%;%C%7%s%0$X$NE83+(B
($BElKLBgN.BN8&(B) $B!{4(@n(B $B@?Fs(B
Damage-free
Neutral beam
Nano-material
S-8293
13:40$B!A(B 14:00G215$B9b=88wH/EEMQ%^%$%/%m=8@QD>Ns@\B3(BGaAs$BB@M[EECS$N;n:n(B
($BElBg9)(B) $B!{@%G=(B $BL$F`ET(B $B!&(B ($BElBg@hC<8&(B) $BEOJU(B $B7rB@O:(B $B!&(B ($BElBg9)(B) ($B@5(B)$B?y;3(B $B@5OB(B $B!&(B ($BElBg@hC<8&(B) $BCfLn(B $B5A><(B
micromachining
monolithic integrated solar cells
S-8919
(14:00$B!A(B15:20)$B!!(B($B:BD9(B $B=);3(B $BBY?-(B)
14:00$B!A(B 14:20G216Monolithic integration of multi-wavelength InGaN/GaN MQW LEDs via selective area MOVPE
($BElBg1!9)(B) $B!{(B($B3X(B)$B?@C+(B $BC#Li(B $B!&(B ($B@5(B)$BI4@%(B $B7r(B $B!&(B ($B@5(B)$B?y;3(B $B@5OB(B $B!&(B ($B@5(B)$BAz3@(B $B9,9@(B
MOVPE
nitride semiconductor
LED
S-8569
14:20$B!A(B 14:40G217$BJd=~%I!<%T%s%0$K$h$k(BInGaAs/GaAsP$BNL;R0f8MB@M[EECS$N%-%c%j%"2s<}8zN(8~>e(B
($BElBg1!9)(B) $B!{F#0f(B $B9(>;(B $B!&(B ($B@hC<8&(B) $B2&(B $B1>K2(B $B!&(B $BEOJU(B $B7rB@O:(B $B!&(B ($BElBg1!9)(B) ($B@5(B)$B?y;3(B $B@5OB(B $B!&(B ($B@hC<8&(B) $BCfLn(B $B5A><(B
InGaAs / GaAsP quantum well solar cells
compensation doping
MOVPE
S-8860
14:40$B!A(B 15:00G218$BB@M[EECSMQ(BCIS$BGvKl:n@=$K$*$1$k(BSe$B2=%W%m%;%9$ND6NW3&N.BN$rMQ$$$?Dc292=(B
($BElKLBgB?858&(B) $B!{(B($B3X(B)$BLpCf(B $BH~5*(B $B!&(B ($B@5(B)$Bcx5o(B $B9bL@(B $B!&(B ($B@5(B)$BK\4V(B $B3J(B
CIGS Solar Cell
Conversion
Supercritical Fluid
S-8682
15:00$B!A(B 15:20G219Si(111)$B>e(BInAs$B$NA*Br%X%F%m%(%T%?%-%7%c%k@.D9$K$*$1$k3&LLEE5$EAF3FC@-(B
($BElBg1!9)(B) $B!{EOn5(B $BfFBg(B $B!&(B ($BElBg@hC<8&(B) $BEOJU(B $B7rB@O:(B $B!&(B $BHn8e(B $B> $B!&(B ($BElBg1!9)(B) ($B@5(B)$B?y;3(B $B@5OB(B $B!&(B ($BElBg@hC<8&(B) $BCfLn(B $B5A><(B
MOVPE
selective-area
InAs/Si
S-8807
$B9V1i%W%m%0%i%`(B
$B2=3X9)3X2q(B $BBh(B44$B2s=)5(Bg2q(B
(C) 2012 $B8x1W
Most recent update: 2012-08-20 15:02:17
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