$B9V1i(B $B;~9o(B | $B9V1i(B $BHV9f(B | $B9V1iBjL\!?H/I=$B%-!<%o!<%I(B | $BJ,N`(B $BHV9f(B | $B$BHV9f(B | |
D $B2q>l!&Bh(B 2 $BF|(B |
(10:00$B!A(B12:00) ($B:BD9(B $BsnF#(B $B>fLw!&CSED(B $B7=(B) |
10:00$B!A(B 10:20 | D204 | Structure and electrochemical performance of rapidly deposited silicon-based porous films for lithium ion rechargeable batteries
($BElBg1!9)(B) $B!{(B($B3X(B)$BM{(B $B=EZ_(B$B!&(B ($B=;M'2=3X(B) $B>>K\(B $B?58c(B$B!&(B $BCf:,(B $B7x$B!&(B ($BAaBg@h?JM}9)(B) ($B@5(B)$BLnED(B $BM%(B | physical vapor deposition porous silicon films lithium ion batteries
| S-2 | 956 |
10:20$B!A(B 10:40 | D205 | $B%b%N%a%A%k%H%j%/%m%m%7%i%s$r86NA$H$7$?(BSiC-CVD$B%W%m%;%9$K$*$1$kI=LLH?1~$r9MN8$7$?AGH?1~5!9=$N9=C[(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B:4F#(B $BEP(B$B!&(B ($B3X(B)$BgULg(B $BM$0l(B$B!&(B ($B3X(B)$BJ!Eg(B $B9/G7(B$B!&(B ($B3X(B)$B?y1:(B $B=(=S(B$B!&(B (IHI$B4pHW8&(B) $BJ]8MDM(B $B>?(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B $B1[(B $B8wCK(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BAz3@(B $B9,9@(B | SiC CVD reaction mechanism
| S-2 | 637 |
10:40$B!A(B 11:00 | D206 | $B%b%N%a%A%k%H%j%/%m%m%7%i%s$r86NA$H$7$?(BSiC-CVD$B%W%m%;%9$NAm3gH?1~%b%G%k$N8!F$(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BJ!Eg(B $B9/G7(B$B!&(B ($B3X(B)$B:4F#(B $BEP(B$B!&(B ($B3X(B)$BgULg(B $BM$0l(B$B!&(B ($B3X(B)$B?y1:(B $B=(=S(B$B!&(B (IHI$B4pHW8&(B) $BJ]8MDM(B $B>?(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B | SiC CVD Methyltrichlorosilane
| S-2 | 436 |
11:00$B!A(B 11:20 | D207 | $B%W%i%:%^(BCVD$BK!$K$h$k%X%-%5%a%A%k%8%7%m%-%5%s$H;@AG$+$i$N%7%j%+@.Kl(B
($B5~Bg9)(B) $B!{(B($B3X(B)$BC]ED(B $B0M2C(B$B!&(B ($B3X(B)$B1JLj(B $B>D(B$B!&(B ($B3X(B)$B9b66(B $BNJ(B$B!&(B ($B@5(B)$B2O@%(B $B85L@(B | Plasma CVD HMDSO silica
| S-2 | 835 |
11:20$B!A(B 11:40 | D208 | $B@V?'H/8w%7%j%3%s:`NA$N5$Aj9g@.$HH/8wFC@-(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BBgIp(B $B=(L-(B$B!&(B ($BG@9)Bg1!(BBASE) ($B@5(B)$B0p_7(B $B?8(B$B!&(B ($BElBg4D0B%;(B/$BElBg1!9)(B) ($B@5(B)$BDT(B $B2B;R(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$B;38}(B $BM34tIW(B | CVD nanoparticles photoluminescence
| S-2 | 410 |
11:40$B!A(B 12:00 | D209 | $B0!1t4T85K!$K$h$k%7%j%3%s7ABV7A@.%a%+%K%:%`(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B>.Ln(B $BBgOB(B$B!&(B ($BG@9)Bg1!(BBASE) ($B@5(B)$B0p_7(B $B?8(B$B!&(B ($BElBg4D0B%;(B/$BElBg1!9)(B) ($B@5(B)$BDT(B $B2B;R(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$B;38}(B $BM34tIW(B | zinc reduction reaction silicon supersaturation
| S-2 | 413 |
|
(13:00$B!A(B14:20) ($B:BD9(B $B2<;3(B $BM52p!&@n>e(B $B2m?M(B) |
13:00$B!A(B 13:40 | D213 | [$BE8K>9V1i(B] $B%J%N%^%F%j%"%k%W%m%;%C%7%s%0$N$?$a$ND6NW3&N.BN$NMxMQ(B
($BElKLBg(B) $B!{(B($B@5(B)$B0$?,(B $B2mJ8(B | Supercritical Nano Processing
| S-2 | 885 |
13:40$B!A(B 14:00 | D215 | [$B>7BT9V1i(B] $BD6NW3&N.BN$rMxMQ$7$?2=9gJ*H>F3BNB@M[EECS@=B$$NDc%3%9%H2=(B
($BElKLBgB?858&(B) $B!{(B($B@5(B)$Bcx5o(B $B9bL@(B$B!&(B ($B@5(B)$BK\4V(B $B3J(B | supercritical fluid selenization solar cells
| S-2 | 351 |
14:00$B!A(B 14:20 | D216 | $B%"%k%3!<%kE:2C$K$h$kD6NW3&N.BN$rMQ$$$?(BTiO2$BKl7A@.(B
($BElBg1!9)(B) $B!{(B($B3X(B)$Bld(B $B%f%&(B$B!&(B ($B3X(B)$BE"(B $B7>J{(B$B!&(B ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B | Supercritical fluid deposition TiO$2$ alcohol
| S-2 | 622 |
(14:20$B!A(B15:40) ($B:BD9(B $B2O@%(B $B85L@!&C^:,(B $BFX90(B) |
14:20$B!A(B 15:00 | D217 | [$BE8K>9V1i(B] MOCVD$B$K$h$kCb2=J*H>F3BN$N5$Aj@.D9(B
($BBgM[F|;@(B) $B!{>>K\(B $B8y(B | Nitride Semiconductors MOCVD Quantum Chemical Calculation
| S-2 | 377 |
15:00$B!A(B 15:20 | D219 | GaN$B7O(BMOVPE$B$K$*$1$k@.D9B.EY!&AH@.$N2r@O$H@)8f(B(1)
($BElBg1!9)(B) $B!{(B($B@5(B)$BI4@%(B $B7r(B$B!&(B $B?@C+(B $BC#Li(B$B!&(B ($B@5(B)$B?y;3(B $B@5OB(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B | GaN MOVPE $BH?1~2r@O(B
| S-2 | 855 |
15:20$B!A(B 15:40 | D220 | GaN$B7O(BMOVPE$B$K$*$1$k@.D9B.EY!&AH@.$N2r@O$H@)8f(B(2)
($B%_%i%N9)Bg(B) $B!{(BRavasio Stefano Valerio$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B $BF#0f(B $B9n;J(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B$B!&(B ($B%_%i%N9)Bg(B) Carlo Cavallotti$B!&(B ($BElBg1!9)(B) ($B@5(B)$B?y;3(B $B@5OB(B | GaN MOVPE $BH?1~2r@O(B
| S-2 | 931 |
D $B2q>l!&Bh(B 3 $BF|(B |
(9:40$B!A(B10:40) ($B:BD9(B $BEgED(B $B3X!&6LCV(B $BD> |
9:40$B!A(B 10:00 | D303 | [$B>7BT9V1i(B] $B%9%Q%C%?K!$K$h$kE4%A%?%sJ#;@2=J*GvKl$N:n@=$H:.9g86;R2A@)8f(B
($B2,;3Bg1!<+A3(B) $B!{F#0f(B $BC#@8(B | reactive sputtering Hematite-ilmenite solid solution epitaxial thin
| S-2 | 353 |
10:00$B!A(B 10:20 | D304 | $B3F2A(B
($B:eI\Bg1!9)(B) $B!{(B($B3X(B)$B:,:j(B $B4p?.(B$B!&(B $B@/2,(B $B90PR(B$B!&(B ($B@5(B)$B2,K\(B $B>0$B!&(B ($B@5(B)$BsnF#(B $B>f{J(B$B!&(B ($B@5(B)$B6aF#(B $BOBIW(B$B!&(B ($B%"%k%F%C%/%9(B) $BRy(B $BCRFW(B | titanium carbide hard coating chemical vapor deposition
| S-2 | 946 |
10:20$B!A(B 10:40 | D305 | Co$B%"%_%G%#%M!<%H$rMQ$$$?(BCo-CVD$B%W%m%;%9$K$*$1$k5$AjH?1~$H$=$NLr3d(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BNkLZ(B $BM:Bg(B$B!&(B ($B@5(B)$B@6?e(B $B=(<#(B$B!&(B ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B | amidinate cobalt thermal CVD
| S-2 | 508 |
(10:40$B!A(B12:00) ($B:BD9(B $BLnED(B $BM%!&;01:(B $BK-(B) |
10:40$B!A(B 11:00 | D306 | $B9bG[8~@-F3EE@-;@2=J*22A(B
($B:eI\Bg1!9)(B) $B!{(B($B3X(B)$B9bED(B $B`v;R(B$B!&(B $BDT(B $BE0(B$B!&(B ($B@5(B)$B2,K\(B $B>0$B!&(B ($B@5(B)$BsnF#(B $B>f{J(B$B!&(B ($B@5(B)$B6aF#(B $BOBIW(B$B!&(B $B5HB<(B $BIp(B$B!&(B $BF#B<(B $B5*J8(B$B!&(B ($B:eBg;:8&(B) $BHu8}(B $B9(Fs(B$B!&(B $BKLEg(B $B>4(B$B!&(B $BBgEg(B $BL@Gn(B | ferroelectric material pulsed laser deposition conductive oxide
| S-2 | 947 |
11:00$B!A(B 11:20 | D307 | $B?75,(BRu-CVD/ALD$B86NA$rMQ$$$?
($BElBg1!9)(B) $B!{(B($B3X(B)$B6b(B $BBYM:(B$B!&(B ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B | Ruthenium CVD ALD
| S-2 | 605 |
11:20$B!A(B 11:40 | D308 | $B%"%_%G%#%M!<%H86NA$rMQ$$$?(BCu-CVD$B$K$*$1$k=i4|3KH/@8$N4Q;!(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BEh(B $B9IJ?(B$B!&(B ($B@5(B)$B@6?e(B $B=(<#(B$B!&(B ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B | Cu-CVD Nucleation Amidinate
| S-2 | 959 |
11:40$B!A(B 12:00 | D309 | [$B>7BT9V1i(B] TSV$B
($B%"%k%P%C%/H>F3BNEE;R5;8&(B) $B!{?9@n(B $BBY9((B | Si-DRIE Scallop-free TSV packaging
| S-2 | 356 |
|
(13:00$B!A(B14:20) ($B:BD9(B $B=);3(B $BBY?-!&;0Bp(B $B2m?M(B) |
13:00$B!A(B 13:20 | D313 | Kinetic study on Hot-wire-assisted Atomic Layer Deposition of Ni Thin Films
(The U. Tokyo) $B!{(B($B3X(B)Yuan Guangjie$B!&(B ($B@5(B)Shimizu Hideharu$B!&(B ($B@5(B)Momose Takeshi$B!&(B ($B@5(B)Shimogaki Yukihiro | Hot-wire-assisted ALD Ni film Kinetics
| S-2 | 803 |
13:20$B!A(B 13:40 | D314 | $B%J%NN3;RBO@QKl$N>F@.$K$h$k9=B$@)8f(B
($B9-Bg1!9)(B) $B!{(B($B3X(B)$Bh_C+(B $BM&$B!&(B ($B@5(B)$B5WJ](B $BM%(B$B!&(B ($B@5(B)$BEgED(B $B3X(B | PECVD Porous thin film Sintering
| S-2 | 123 |
13:40$B!A(B 14:00 | D315 | $BM-5!%/%m%m%7%i%s$r86NA$H$7$?(BSiC-CVD$B%W%m%;%9=P8}%,%9J,@O$K$h$kH?1~%b%G%k$N8!F$(B
($BElBg1!9)(B) $B!{(B($B3X(B)$BgULg(B $BM$0l(B$B!&(B ($B3X(B)$B:4F#(B $BEP(B$B!&(B ($B3X(B)$BJ!Eg(B $B9/G7(B$B!&(B ($B3X(B)$B?y1:(B $B=(=S(B$B!&(B (IHI$B4pHW8&(B) $BJ]8MDM(B $B>?(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B | CVD Metyltrichlorosilane Dimetyldichlorosilane
| S-2 | 587 |
14:00$B!A(B 14:20 | D316 | $B%8%a%A%k%8%/%m%m%7%i%s$r86NA$H$7$?(BSiC-CVD$B%W%m%;%9$N%^%k%A%9%1!<%k2r@O(B
($BElBg1!9)(B) $B!{(B($B3X(B)$B?y1:(B $B=(=S(B$B!&(B ($B3X(B)$BJ!Eg(B $B9/G7(B$B!&(B ($B3X(B)$B:4F#(B $BEP(B$B!&(B ($B3X(B)$BgULg(B $BM$0l(B$B!&(B (IHI$B4pHW8&(B) $BJ]8MDM(B $B>?(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B | SiC CVD Dimethyldichlorosilane
| S-2 | 577 |
(14:20$B!A(B15:40) ($B:BD9(B $BAz3@(B $B9,9@!&J]8MDM(B $B>?(B) |
14:20$B!A(B 14:40 | D317 | $B%7%i%s(B/$B?eAG(BPE-CVD$BCf$N%7%j%3%s6I=j@=Kl$N2r@O(B
($B4tIlBg1!9)(B) $B!{(B($B@5(B)$B@>ED(B $BE/(B$B!&(B ($B@5(B)$BL6ED(B $B9@;J(B$B!&(B $B7*NS(B $B;VF,bC(B | PE-CVD silicon deposition
| S-2 | 454 |
14:40$B!A(B 15:00 | D318 | $B%a%?%s$r86NA$H$9$k2=3X5$Aj?;F)K!$K$h$kC:AGA!0]6/2=C:AGJ#9g:`NA@=B$2aDx$NHsDj>o%7%_%e%l!<%7%g%s(B
($B6eBg(B) $B!{(B($B@5(B)$BB'1J(B $B9TMG(B$B!&(B ($B3X(B)$B$B!&(B ($B3X(B)$BEDCf(B $BN$B!&(B ($B@5(B)$B9)F#(B $B??Fs(B$B!&(B ($B@5(B)$BNS(B $B=a0lO:(B | reaction kinetics transport phenomena CVD
| S-2 | 899 |
15:00$B!A(B 15:20 | D319 | $B%+!<%\%s%J%N%A%e!<%V$NIbM7%3!<%F%#%s%0(B
($B9-Bg1!9)(B) $B!{(B($B3X(B)$B3QB<(B $BMNJ8(B$B!&(B ($B@5(B)$B5WJ](B $BM%(B$B!&(B ($B@5(B)$BEgED(B $B3X(B | composite PECVD nanoparticles
| S-2 | 124 |
15:20$B!A(B 15:40 | D320 | Fluidized Bed CVD of Carbon Nanotubes Using a Heat-Exchange Reactor
($BElBg1!9)(B) $B!{(B($B3X(B)$BDD(B $BCiL@(B$B!&(B ($BAaBg1!M}9)(B) $B6b(B $BEl\F(B$B!&(B ($B@5(B)$BD9C+@n(B $B3>(B$B!&(B ($B@5(B)$BBgBt(B $BMxCK(B$B!&(B ($B@5(B)$BLnED(B $BM%(B | carbon nanotubes fluidized bed catalytic chemical vapor deposition
| S-2 | 729 |