SCEJ 47th Autumn Meeting (Sapporo, 2015): Session programs

`SCEJ 47th Autumn Meeting (Sapporo, 2015)`

Session programs

SCEJ Division Symposium SY-9. <CVD & Dry Processes - Reaction Engineering for Controlling Microstructure and Functions>

O213-O224, O301-O320

Most recent update: 2015-08-26 10:00:42

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
Hall O, Day 2
(13:00–14:00) (Chair: Tamaoki N.)
13:00– 13:40	O213	[Review lecture] Review of process technologies for 3D memories integration (Toshiba) Hattori Kei	semiconductor fabrication process technology 3D memory	SY-9	129
13:40– 14:00	O215	Effects of supersaturation and solubility difference on anthracene film fabrication using temperature gradient in supercritical solution (U. Tokyo) *Toyokura Shota, Shimoyama Yusuke, Shimogaki Yukihiro, Momose Takeshi	Supercritical CO2 anthracene crystallization	SY-9	156
(14:00–15:00) (Chair: Kawase M.)
14:00– 14:20	O216	Kinetics of conformal TiO₂ deposition in supercritical CO₂ with various pressures (U. Tokyo) *Zhao Yu, Momose Takeshi, Shimoyama Yusuke, Shimogaki Yukihiro	supercritical fluid deposition pressure kinetics	SY-9	543
14:20– 14:40	O217	Production of thin films of TIPS-pentacene by rapid expansion of supercritical solutions (RESS) using carbon dioxide and performance evaluation of the organic thin film transistor (Shinshu U.) *Natsume M., Takahashi Y., Fujii T., Uchida H.	Supercritical carbon dioxide TIPS-pentacene thin films Organic thin film transistor (OTFT)	SY-9	668
14:40– 15:00	O218	Formation of iron oxide thin film using supercritical CO₂ (Osaka Pref. U.) *Sumi Y., Tone M., Okamoto N., Saito T., Kondo K., (Tohoku U.) Takami S.	supercritical CO2 FeRAM iron oxide	SY-9	758
(15:00–16:00) (Chair: Shimoyama Y.)
15:00– 15:20	O219	[Invited lecture] High pressure spray deposition technology with lowered viscosity by CO₂ addition (RISPT, AIST) *Kawasaki Shin-ichiro, (Tohoku U.) Suzuki Akira	high pressure carbon dioxide spray deposition viscosity	SY-9	131
15:20– 15:40	O220	CuInS₂ deposition into nanoporous TiO₂ by using supercritical fluid (IMRAM, Tohoku U.) *Yasui Yoji, Nakayasu Yuta, (U. Tokyo) Momose Takeshi, (IMRAM, Tohoku U.) Tomai Takaaki, Honma Itaru	supercritical fluid deposition nanostructure compound semiconductor	SY-9	442
15:40– 16:00	O221	Silica-based gas barrier films prepared by plasma CVD and measurement of gas permeation rate (Kyoto U.) *(PCEF)Ohtsu H., Takeda E., Kawase M.	plasma CVD silica-based film gas barrier	SY-9	757
(16:00–17:00) (Chair: Habuka H.)
16:00– 16:20	O222	Chemical structure and properties of silica film prepared by plasma CVD (Kyoto U.) *Takeda E., Deguchi T., (PCEF)Ohtsu H., Kawase M.	plasma CVD chemical structure film properties	SY-9	815
16:20– 16:40	O223	Characterization of carbon nanowalls synthesized by PECVD using different carbon sources (Tokyo Tech) *Shinkawa Hiroki, Mori Shinsuke	carbon nanowall carbon monoxide	SY-9	897
16:40– 17:00	O224	Practical chemical vapor deposition of graphene: Feed modulation for large-grain, high coverage graphene films in shorter CVD time (Waseda U.) *Okawa Asahi, Hasegawa Kei, Noda Suguru	Graphene Chemical vapor deposition Nucleation and growth	SY-9	605
Hall O, Day 3
(9:00–10:00) (Chair: Ikeda K.)
9:00– 9:20	O301	Improved methodology to evaluate reactivity of deposition species within fine trenches (U. Tokyo) *Funato Y., Shima K., Sato N., Sugiura H., Nakahara T., (IHI) Fukushima Y., (U. Tokyo) Momose T., Shimogaki Y.	reactivity analysis fine trench Chemical Vapor Deposition	SY-9	861
9:20– 9:40	O302	Modeling of chemical vapor infiltration using ultra high aspect-ratio microcavity (U. Tokyo) *Shima K., Sato N., Funato Y., Sugiura H., Nakahara T., (IHI) Fukushima Y., (U. Tokyo) Momose T., Shimogaki Y.	CVD SiC methyltrichlorosilane	SY-9	747
9:40– 10:00	O303	Effects of reactant hydrocarbons and substrate metals on CVD rate of pyrolytic carbon (Kyoto U.) *(PCEF)Baba S., Iwai T., Nagata K., Kawase M.	CVD Pyrolysis Carbon	SY-9	278
(10:00–11:00) (Chair: Mori S.)
10:00– 10:20	O304	Transient simulation for CVD process using alternative gases (Athenasys) Ikeda K.	CVD ALD simulation	SY-9	608
10:20– 10:40	O305	By-product Formation in a SiHCl₃-H₂ System for Silicon Film Deposition (Yokohama Nat. U.) Sakurai Ayumi, Saito Ayumi, *Habuka Hitoshi	Silicon epitaxial growth trichlorosilane by-products	SY-9	11
10:40– 11:00	O306	Construction of reaction mechanism of formation of deposit in exhaust of Si-Cl compounds CVD reactor (U. Tokyo) *Sato N., Shima K., Funato Y., Sugiura H., Nakahara T., (IHI) Fukushima Y., (U. Tokyo) Momose T., (NIAD-UE) Koshi M., (U. Tokyo) Shimogaki Y.	silicon-chlorine compounds by-products elementary reaction simulation	SY-9	840
(11:00–12:00) (Chair: Shimogaki Y.)
11:00– 11:20	O307	Analysis of sublimation purification process of organic semiconductor materials (U. Tokyo) *Iwao Takuya, Yamaguchi Yukio, Tsuji Yoshiko	sublimation purification organic semiconductors	SY-9	468
11:20– 11:40	O308	Preparation of Ag-TiO₂ composite films with nanoparticle codeposition by a gas phase method (Hiroshima U.) *(PCEF)Masuda H., Tai Y., Kubo M., Shimada M.	PECVD Nanoparticle synthesis PVD	SY-9	273
11:40– 12:00	O309	[Invited lecture] Design, synthesis and ALD assessment of organometallic precursors for semiconductor applications (Air Liquide) Dussarrat Christian	atomic layer deposition conformal growth reaction mechanism	SY-9	132

(13:00–14:00) (Chair: Noda S.)
13:00– 13:40	O313	[Invited lecture] Heteroepitaxial growth and of compound semiconductor nanowire (RCIQE, Hokkaido U.) *Tomioka Katsuhiro, Motohisa Junichi, Fukui Takashi	compound semiconductor nanowire heteroepitaxial growth	SY-9	128
13:40– 14:00	O315	Properties of zinc oxide thin films synthesized by CVD method. (Tokai U.) *Kuroda Shingo, Kubo Fumika, Yokoyama Yuki, Watanabe Masatoshi, Okubo Tatsuo, Akiyama Yasunobu	CVD Zinc oxide transparent conductive film	SY-9	767
(14:00–15:00) (Chair: Akiyama Y.)
14:00– 14:20	O316	Electrical properties of ferroelectric capacitors with conductive oxide electrodes fabricated under different oxygen pressure (Osaka Pref. U.) *Takada Y., Amano T., Okamoto N., Saito T., Kondo K., Yoshimura T., Fujimura N., (Osaka U.) Higuchi K., Kitajima A.	Ferroelectric capacitor pulsed laser deposition oxygen pressure	SY-9	645
14:20– 14:40	O317	Contact resistance evaluation of electron beam evaporated Ti compound/Pt/Au electrode on p-type diamond by transmission line model (Osaka Pref. U.) *Suzuki S., Okamoto N., Saito T., Kondo K., (AIST) Matsumoto T., Makino T., Ogura M., Kato H., Takeuchi D., Yamasaki S., Okushi H.	diamond contact resistance electron beam evaporated	SY-9	787
14:40– 15:00	O318	[Review lecture] Structural control and radical enhanced low temperature growth of nitride thin film (Kitami Inst. Tech.) *Takeyama Mayumi, Sato Masaru, Noya Atsushi	nitride thin film sputtering radical nitridization	SY-9	130
(15:00–15:40) (Chair: Saito T.)
15:00– 15:20	O319	Fabrication of large-grain crystalline Si thin films by rapid vapor deposition with in situ melt-crystallization (Waseda U.) *Yamasaki Yuhei, Hasegawa Kei, Osawa Toshio, Noda Suguru	crystalline silicon thin films vapor deposition liquid phase crystallization	SY-9	643
15:20– 15:40	O320	Crystal orientation control of CVD-coated Al₂O₃ layer (U. Tokyo) *Nishizawa Kei, Momose Takeshi, (Kyocera) Tanibuchi Takahito, (U. Tokyo) Shimogaki Yukihiro	CVD Al2O3 crystal-orientation	SY-9	827

Technical program
SCEJ 47th Autumn Meeting (Sapporo, 2015)

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Most recent update: 2015-08-26 10:00:42
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