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SCEJ 47th Autumn Meeting (Sapporo, 2015)

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SCEJ Division Symposium SY-9. <CVD & Dry Processes - Reaction Engineering for Controlling Microstructure and Functions>

O213-O224, O301-O320

Most recent update: 2015-08-26 10:00:42
TimePaper
ID
Title / AuthorsKeywordsTopic codeAck.
number
Hall O, Day 2
(13:00–14:00) (Chair: Tamaoki N.)
13:0013:40O213[Review lecture] Review of process technologies for 3D memories integration
(Toshiba) Hattori Kei
semiconductor fabrication
process technology
3D memory
SY-9129
13:4014:00O215Effects of supersaturation and solubility difference on anthracene film fabrication using temperature gradient in supercritical solution
(U. Tokyo) *Toyokura Shota, Shimoyama Yusuke, Shimogaki Yukihiro, Momose Takeshi
Supercritical CO2
anthracene
crystallization
SY-9156
(14:00–15:00) (Chair: Kawase M.)
14:0014:20O216Kinetics of conformal TiO2 deposition in supercritical CO2 with various pressures
(U. Tokyo) *Zhao Yu, Momose Takeshi, Shimoyama Yusuke, Shimogaki Yukihiro
supercritical fluid deposition
pressure
kinetics
SY-9543
14:2014:40O217Production of thin films of TIPS-pentacene by rapid expansion of supercritical solutions (RESS) using carbon dioxide and performance evaluation of the organic thin film transistor
(Shinshu U.) *Natsume M., Takahashi Y., Fujii T., Uchida H.
Supercritical carbon dioxide
TIPS-pentacene thin films
Organic thin film transistor (OTFT)
SY-9668
14:4015:00O218Formation of iron oxide thin film using supercritical CO2
(Osaka Pref. U.) *Sumi Y., Tone M., Okamoto N., Saito T., Kondo K., (Tohoku U.) Takami S.
supercritical CO2
FeRAM
iron oxide
SY-9758
(15:00–16:00) (Chair: Shimoyama Y.)
15:0015:20O219[Invited lecture] High pressure spray deposition technology with lowered viscosity by CO2 addition
(RISPT, AIST) *Kawasaki Shin-ichiro, (Tohoku U.) Suzuki Akira
high pressure carbon dioxide
spray deposition
viscosity
SY-9131
15:2015:40O220CuInS2 deposition into nanoporous TiO2 by using supercritical fluid
(IMRAM, Tohoku U.) *Yasui Yoji, Nakayasu Yuta, (U. Tokyo) Momose Takeshi, (IMRAM, Tohoku U.) Tomai Takaaki, Honma Itaru
supercritical fluid deposition
nanostructure
compound semiconductor
SY-9442
15:4016:00O221Silica-based gas barrier films prepared by plasma CVD and measurement of gas permeation rate
(Kyoto U.) *(PCEF)Ohtsu H., Takeda E., Kawase M.
plasma CVD
silica-based film
gas barrier
SY-9757
(16:00–17:00) (Chair: Habuka H.)
16:0016:20O222Chemical structure and properties of silica film prepared by plasma CVD
(Kyoto U.) *Takeda E., Deguchi T., (PCEF)Ohtsu H., Kawase M.
plasma CVD
chemical structure
film properties
SY-9815
16:2016:40O223Characterization of carbon nanowalls synthesized by PECVD using different carbon sources
(Tokyo Tech) *Shinkawa Hiroki, Mori Shinsuke
carbon nanowall
carbon monoxide
SY-9897
16:4017:00O224Practical chemical vapor deposition of graphene: Feed modulation for large-grain, high coverage graphene films in shorter CVD time
(Waseda U.) *Okawa Asahi, Hasegawa Kei, Noda Suguru
Graphene
Chemical vapor deposition
Nucleation and growth
SY-9605
Hall O, Day 3
(9:00–10:00) (Chair: Ikeda K.)
9:009:20O301Improved methodology to evaluate reactivity of deposition species within fine trenches
(U. Tokyo) *Funato Y., Shima K., Sato N., Sugiura H., Nakahara T., (IHI) Fukushima Y., (U. Tokyo) Momose T., Shimogaki Y.
reactivity analysis
fine trench
Chemical Vapor Deposition
SY-9861
9:209:40O302Modeling of chemical vapor infiltration using ultra high aspect-ratio microcavity
(U. Tokyo) *Shima K., Sato N., Funato Y., Sugiura H., Nakahara T., (IHI) Fukushima Y., (U. Tokyo) Momose T., Shimogaki Y.
CVD
SiC
methyltrichlorosilane
SY-9747
9:4010:00O303Effects of reactant hydrocarbons and substrate metals on CVD rate of pyrolytic carbon
(Kyoto U.) *(PCEF)Baba S., Iwai T., Nagata K., Kawase M.
CVD
Pyrolysis
Carbon
SY-9278
(10:00–11:00) (Chair: Mori S.)
10:0010:20O304Transient simulation for CVD process using alternative gases
(Athenasys) Ikeda K.
CVD
ALD
simulation
SY-9608
10:2010:40O305By-product Formation in a SiHCl3-H2 System for Silicon Film Deposition
(Yokohama Nat. U.) Sakurai Ayumi, Saito Ayumi, *Habuka Hitoshi
Silicon epitaxial growth
trichlorosilane
by-products
SY-911
10:4011:00O306Construction of reaction mechanism of formation of deposit in exhaust of Si-Cl compounds CVD reactor
(U. Tokyo) *Sato N., Shima K., Funato Y., Sugiura H., Nakahara T., (IHI) Fukushima Y., (U. Tokyo) Momose T., (NIAD-UE) Koshi M., (U. Tokyo) Shimogaki Y.
silicon-chlorine compounds
by-products
elementary reaction simulation
SY-9840
(11:00–12:00) (Chair: Shimogaki Y.)
11:0011:20O307Analysis of sublimation purification process of organic semiconductor materials
(U. Tokyo) *Iwao Takuya, Yamaguchi Yukio, Tsuji Yoshiko
sublimation
purification
organic semiconductors
SY-9468
11:2011:40O308Preparation of Ag-TiO2 composite films with nanoparticle codeposition by a gas phase method
(Hiroshima U.) *(PCEF)Masuda H., Tai Y., Kubo M., Shimada M.
PECVD
Nanoparticle synthesis
PVD
SY-9273
11:4012:00O309[Invited lecture] Design, synthesis and ALD assessment of organometallic precursors for semiconductor applications
(Air Liquide) Dussarrat Christian
atomic layer deposition
conformal growth
reaction mechanism
SY-9132

(13:00–14:00) (Chair: Noda S.)
13:0013:40O313[Invited lecture] Heteroepitaxial growth and of compound semiconductor nanowire
(RCIQE, Hokkaido U.) *Tomioka Katsuhiro, Motohisa Junichi, Fukui Takashi
compound semiconductor
nanowire
heteroepitaxial growth
SY-9128
13:4014:00O315Properties of zinc oxide thin films synthesized by CVD method.
(Tokai U.) *Kuroda Shingo, Kubo Fumika, Yokoyama Yuki, Watanabe Masatoshi, Okubo Tatsuo, Akiyama Yasunobu
CVD
Zinc oxide
transparent conductive film
SY-9767
(14:00–15:00) (Chair: Akiyama Y.)
14:0014:20O316Electrical properties of ferroelectric capacitors with conductive oxide electrodes fabricated under different oxygen pressure
(Osaka Pref. U.) *Takada Y., Amano T., Okamoto N., Saito T., Kondo K., Yoshimura T., Fujimura N., (Osaka U.) Higuchi K., Kitajima A.
Ferroelectric capacitor
pulsed laser deposition
oxygen pressure
SY-9645
14:2014:40O317Contact resistance evaluation of electron beam evaporated Ti compound/Pt/Au electrode on p-type diamond by transmission line model
(Osaka Pref. U.) *Suzuki S., Okamoto N., Saito T., Kondo K., (AIST) Matsumoto T., Makino T., Ogura M., Kato H., Takeuchi D., Yamasaki S., Okushi H.
diamond
contact resistance
electron beam evaporated
SY-9787
14:4015:00O318[Review lecture] Structural control and radical enhanced low temperature growth of nitride thin film
(Kitami Inst. Tech.) *Takeyama Mayumi, Sato Masaru, Noya Atsushi
nitride thin film
sputtering
radical nitridization
SY-9130
(15:00–15:40) (Chair: Saito T.)
15:0015:20O319Fabrication of large-grain crystalline Si thin films by rapid vapor deposition with in situ melt-crystallization
(Waseda U.) *Yamasaki Yuhei, Hasegawa Kei, Osawa Toshio, Noda Suguru
crystalline silicon thin films
vapor deposition
liquid phase crystallization
SY-9643
15:2015:40O320Crystal orientation control of CVD-coated Al2O3 layer
(U. Tokyo) *Nishizawa Kei, Momose Takeshi, (Kyocera) Tanibuchi Takahito, (U. Tokyo) Shimogaki Yukihiro
CVD
Al2O3
crystal-orientation
SY-9827

Technical program
SCEJ 47th Autumn Meeting (Sapporo, 2015)

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Most recent update: 2015-08-26 10:00:42
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