SCEJ

$B2=3X9)3X2q(B $BBh(B47$B2s=)5(Bg2q(B

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English page

$BIt2q%7%s%]%8%&%`(B SY-9. <CVD$B!&%I%i%$%W%m%;%9!!!]9=B$!&5!G=@)8f$NH?1~9)3X!](B>

O213-O224, O301-O320

$B:G=*99?7F|;~!'(B2015-08-26 10:00:42
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$BHV9f(B		$B9V1iBjL\!?H/I=$B%-!<%o!<%I(B$BJ,N`(B
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O $B2q>l!&Bh(B 2 $BF|(B
(13:00$B!A(B14:00) ($B:BD9(B $B6LCV(B $BD>
13:00$B!A(B 13:40O213[$BE8K>9V1i(B] 3D$B%a%b%j;~Be$N%W%m%;%95;=QE8K>(B
($BEl
semiconductor fabrication
process technology
3D memory
SY-9129
13:40$B!A(B 14:00O215$BD6NW3&MOBN$N29EY8{G[$rMxMQ$7$?%"%s%H%i%;%s@=Kl$K$*$1$k2aK0OBEY$*$h$SG;EY$N1F6A(B
($BElBg1!9)(B) ($B3X(B)$B!{K-AR(B $B>MB@(B$B!&(B ($B@5(B)$B2<;3(B $BM52p(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B$B!&(B ($B@5(B)$BI4@%(B $B7r(B
Supercritical CO2
anthracene
crystallization
SY-9156
(14:00$B!A(B15:00) ($B:BD9(B $B2O@%(B $B85L@(B)
14:00$B!A(B 14:20O216$B%3%s%U%)!<%^%k$JD6NW3&N.BNBO@Q$K$*$1$k(BCO2$B05NO$N1F6A(B
($BElBg1!9)(B) ($B3X(B)$B!{%A%g%&(B $B%f%&(B$B!&(B ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B@5(B)$B2<;3(B $BM52p(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B
supercritical fluid deposition
pressure
kinetics
SY-9543
14:20$B!A(B 14:40O217$BD6NW3&MOBN5^B.KDD%K!$K$h$k(BTIPS$B%Z%s%?%;%sGvKlAO@=$HM-5!GvKl%H%i%s%8%9%?$NFC@-I>2A(B
($B?.=#Bg1!M}9)(B) ($B3X(B)$B!{2FL\(B $B$B!&(B ($B3X(B)$B9b66(B $BM$BA(B$B!&(B ($B?.=#Bg1!Am9)(B) ($B3X(B)$BF#0f(B $BN5Li(B$B!&(B ($B?.=#Bg9)(B) ($B@5(B)$BFbED(B $BGn5W(B
Supercritical carbon dioxide
TIPS-pentacene thin films
Organic thin film transistor (OTFT)
SY-9668
14:40$B!A(B 15:00O218$BD6NW3&Fs;@2=C:AG$rMQ$$$?;@2=E4GvKl$N:n@.(B
($B:eI\Bg1!(B) ($B3X(B)$B!{3Q(B $B2E?M(B$B!&(B ($B:eI\Bg(B) ($B3X(B)$BEaG)(B $B@5Mx(B$B!&(B ($B:eI\Bg1!(B) ($B@5(B)$B2,K\(B $B>0$B!&(B ($B@5(B)$BsnF#(B $B>f{J(B$B!&(B ($B@5(B)$B6aF#(B $BOBIW(B$B!&(B ($BElKLBgB?858&(B) ($B@5(B)$B9b8+(B $B@?0l(B
supercritical CO2
FeRAM
iron oxide
SY-9758
(15:00$B!A(B16:00) ($B:BD9(B $B2<;3(B $BM52p(B)
15:00$B!A(B 15:20O219[$B>7BT9V1i(B] $B9b05(BCO2$BE:2C$K$h$kG4EYDc2<$rMxMQ$7$?9b05J.L8@.Kl5;=Q(B
($B;:Am8&!&2=3X%W%m%;%98&5fItLg(B) $B!{@nyu(B $B?50lO/(B$B!&(B ($BElKLBg(B) $BNkLZ(B $BL@(B
high pressure carbon dioxide
spray deposition
viscosity
SY-9131
15:20$B!A(B 15:40O220$BD6NW3&N.BN$rMQ$$$?(BTiO2$B%J%N:Y9&$X$N(BCuInS2$BKd$a9~$_@.Kl(B
($BElKLBgB?858&(B) ($B3X(B)$B!{0B0f(B $BMFFs(B$B!&(B ($B3X(B)$BCf0B(B $BM4B@(B$B!&(B ($BElBg9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($BElKLBgB?858&(B) ($B@5(B)$Bcx5o(B $B9bL@(B$B!&(B ($B@5(B)$BK\4V(B $B3J(B
supercritical fluid deposition
nanostructure
compound semiconductor
SY-9442
15:40$B!A(B 16:00O221$B%W%i%:%^(BCVD$BK!$rMQ$$$?%7%j%+7O%,%9%P%j%"Kl$N:n@=$H%,%9F)2aB.EY$NB,Dj(B
($B5~Bg9)(B) ($B3X(B·$B5;4p(B)$B!{BgDE(B $B7<9,(B$B!&(B ($B3X(B)$BC]ED(B $B0M2C(B$B!&(B ($B@5(B)$B2O@%(B $B85L@(B
plasma CVD
silica-based film
gas barrier
SY-9757
(16:00$B!A(B17:00) ($B:BD9(B $B1)?<(B $BEy(B)
16:00$B!A(B 16:20O222$B%W%i%:%^(BCVD$BK!$G:n@=$7$?%7%j%+Kl$N2=3X9=B$$HKlFC@-(B
($B5~Bg9)(B) ($B3X(B)$B!{C]ED(B $B0M2C(B$B!&(B ($B3X(B)$B=P8}(B $BMx$B!&(B ($B3X(B·$B5;4p(B)$BBgDE(B $B7<9,(B$B!&(B ($B@5(B)$B2O@%(B $B85L@(B
plasma CVD
chemical structure
film properties
SY-9815
16:20$B!A(B 16:40O223$B0[$J$kC:AG8;$rMQ$$$?%W%i%:%^(BCVD$B$K$h$k%+!<%\%s%J%N%&%)!<%k$N9g@.$H$=$NFC@-I>2A(B
($BEl9)Bg1!M}9)(B) ($B3X(B)$B!{?7@n(B $BBg$B!&(B ($B@5(B)$B?9(B $B?-2p(B
carbon nanowall
carbon monoxide
SY-9897
16:40$B!A(B 17:00O224$B%0%i%U%'%s$N
($BAaBg1!@h?JM}9)(B) ($B3X(B)$B!{Bg@n(B $BD+M[(B$B!&(B ($B@5(B)$BD9C+@n(B $B3>(B$B!&(B ($B@5(B)$BLnED(B $BM%(B
Graphene
Chemical vapor deposition
Nucleation and growth
SY-9605
O $B2q>l!&Bh(B 3 $BF|(B
(9:00$B!A(B10:00) ($B:BD9(B $BCSED(B $B7=(B)
9:00$B!A(B 9:20O301$BHy:Y%H%l%s%A$K$*$1$k@=KlJ*
($BElBg1!9)(B) ($B3X(B)$B!{gULg(B $BM$0l(B$B!&(B ($B3X(B)$BEh(B $B9IJ?(B$B!&(B ($B3X(B)$B:4F#(B $BEP(B$B!&(B $B?y1:(B $B=(=S(B$B!&(B ($B3X(B)$BCf86(B $BBsLi(B$B!&(B (IHI$B4pHW8&(B) ($B@5(B)$BJ!Eg(B $B9/G7(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B
reactivity analysis
fine trench
Chemical Vapor Deposition
SY-9861
9:20$B!A(B 9:40O302$BD69b%"%9%Z%/%HHf%_%/%m%-%c%S%F%#$rMQ$$$?(BSiC-CVI$BK!$N%b%G%j%s%0(B
($BElBg1!9)(B) ($B3X(B)$B!{Eh(B $B9IJ?(B$B!&(B ($B3X(B)$B:4F#(B $BEP(B$B!&(B ($B3X(B)$BgULg(B $BM$0l(B$B!&(B $B?y1:(B $B=(=S(B$B!&(B ($B3X(B)$BCf86(B $BBsLi(B$B!&(B (IHI$B4pHW8&(B) ($B@5(B)$BJ!Eg(B $B9/G7(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B
CVD
SiC
methyltrichlorosilane
SY-9747
9:40$B!A(B 10:00O303$B86NAC:2=?eAG
($B5~Bg9)(B) ($B3X(B·$B5;4p(B)$B!{GO>l(B $BfFJ?(B$B!&(B ($B3X(B)$B4d0f(B $BK-I'(B$B!&(B ($B3X(B)$BD9ED(B $BfF(B$B!&(B ($B@5(B)$B2O@%(B $B85L@(B
CVD
Pyrolysis
Carbon
SY-9278
(10:00$B!A(B11:00) ($B:BD9(B $B?9(B $B?-2p(B)
10:00$B!A(B 10:20O304$BF3F~%,%9$r@Z$jBX$($k(BCVD$B%W%m%;%9$NHsDj>o%,%9N.$l%7%_%e%l!<%7%g%s(B
($B%"%F%J%7%9(B) ($B@5(B)$BCSED(B $B7=(B
CVD
ALD
simulation
SY-9608
10:20$B!A(B 10:40O305SiHCl3$B$K$h$k%7%j%3%s@.Kl;~$NI{@8@.J*7A@.5!9=(B
($B2#9qBg1!9)(B) $B:y0f(B $B$"$f$_(B$B!&(B $Bc7F#(B $B$"$fH~(B$B!&(B ($B@5(B)$B!{1)?<(B $BEy(B
Silicon epitaxial growth
trichlorosilane
by-products
SY-911
10:40$B!A(B 11:00O306$B1vAG(B-$B%1%$AG4^2=9gJ*$rMQ$$$?(BCVD$B$G$N2
($BElBg1!9)(B) ($B3X(B)$B!{:4F#(B $BEP(B$B!&(B ($B3X(B)$BEh(B $B9IJ?(B$B!&(B ($B3X(B)$BgULg(B $BM$0l(B$B!&(B $B?y1:(B $B=(=S(B$B!&(B ($B3X(B)$BCf86(B $BBsLi(B$B!&(B (IHI$B4pHW8&(B) ($B@5(B)$BJ!Eg(B $B9/G7(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B3X0L$B!&(B ($BElBg1!9)(B) ($B@5(B)$BAz3@(B $B9,9@(B
silicon-chlorine compounds
by-products
elementary reaction simulation
SY-9840
(11:00$B!A(B12:00) ($B:BD9(B $BAz3@(B $B9,9@(B)
11:00$B!A(B 11:20O307$BM-5!H>F3BN:`NA>:2Z@:@=%W%m%;%9$N2r@O(B
($BElBg1!9)(B) ($B3X(B)$B!{4dCK(B $BBs:H(B$B!&(B ($B@5(B)$B;38}(B $BM34tIW(B$B!&(B ($BElBg4D0B%;(B/$BElBg1!9)(B) ($B@5(B)$BDT(B $B2B;R(B
sublimation
purification
organic semiconductors
SY-9468
11:20$B!A(B 11:40O308$B5$AjK!$K$h$k(BAg-TiO2$B%J%NN3;R:.9gBO@QKl$N:n@=(B
($B9-Bg1!9)(B) ($B3X(B·$B5;4p(B)$B!{A}ED(B $B1Q9b(B$B!&(B $BED0f(B $BM*2p(B$B!&(B ($B@5(B)$B5WJ](B $BM%(B$B!&(B ($B@5(B)$BEgED(B $B3X(B
PECVD
Nanoparticle synthesis
PVD
SY-9273
11:40$B!A(B 12:00O309[$B>7BT9V1i(B] $BH>F3BN%W%m%;%9MQM-5!6bB086NA$N@_7W!"9g@.$*$h$S(BALD$B$X$NE,MQ(B
($B%(%"!&%j%-!<%I(B) Dussarrat Christian
atomic layer deposition
conformal growth
reaction mechanism
SY-9132

(13:00$B!A(B14:00) ($B:BD9(B $BLnED(B $BM%(B)
13:00$B!A(B 13:40O313[$BE8K>9V1i(B] $B2=9gJ*H>F3BN%J%N%o%$%d$N%X%F%m%(%T%?%-%7%c%k@.D9$HE8K>(B
($BKLBgNL;R=8@Q%(%l%/%H%m%K%/%98&5f%;(B) $B!{IZ2,(B $B9n9-(B$B!&(B $BK\5W(B $B=g0l(B$B!&(B $BJ!0f(B $B9';V(B
compound semiconductor
nanowire
heteroepitaxial growth
SY-9128
13:40$B!A(B 14:00O315$BG.(BCVD $BK!$G:n@=$7$?;@2=0!1tGvKl$NFC@-(B
($BEl3$Bg1!9)(B) ($B3X(B)$B!{9uED(B $B?88c(B$B!&(B ($BEl3$Bg9)(B) $B5WJ](B $B;K9a(B$B!&(B $B2#;3(B $BM%5.(B$B!&(B $BEOn5(B $B2m=S(B$B!&(B ($BEl3$Bg1!9)(B) $BBg5WJ](B $BC#@8(B$B!&(B ($B@5(B)$B=);3(B $BBY?-(B
CVD
Zinc oxide
transparent conductive film
SY-9767
(14:00$B!A(B15:00) ($B:BD9(B $B=);3(B $BBY?-(B)
14:00$B!A(B 14:20O316$B0[$J$k;@AG05NO$G:n@=$7$?F3EE@-;@2=J*EE6K$rM-$9$k6/M6EEBN%-%c%Q%7%?$NEE5$FC@-(B
($B:eI\Bg1!9)(B) ($B3X(B)$B!{9bED(B $B`v;R(B$B!&(B ($B3X(B)$BE7Ln(B $BBY2O(B$B!&(B ($B@5(B)$B2,K\(B $B>0$B!&(B ($B@5(B)$BsnF#(B $B>f{J(B$B!&(B ($B@5(B)$B6aF#(B $BOBIW(B$B!&(B $B5HB<(B $BIp(B$B!&(B $BF#B<(B $B5*J8(B$B!&(B ($B:eBg;:8&(B) $BHu8}(B $B9(Fs(B$B!&(B $BKLEg(B $B>4(B
Ferroelectric capacitor
pulsed laser deposition
oxygen pressure
SY-9645
14:20$B!A(B 14:40O317p$B7?%@%$%d%b%s%I>e$K(BEB$B>xCeK!$G7A@.$7$?(BTi$B2=9gJ*(B/Pt/Au$BEE6K$N(BTLM$BI>2A(B
($B:eI\Bg1!9)(B) ($B3X(B)$B!{NkLZ(B $BAo0lO:(B$B!&(B ($B@5(B)$B2,K\(B $B>0$B!&(B ($B@5(B)$BsnF#(B $B>f{J(B$B!&(B ($B@5(B)$B6aF#(B $BOBIW(B$B!&(B ($B;:Am8&(B) $B>>K\(B $BMc(B$B!&(B $BKRLn(B $B=S@2(B$B!&(B $B>.AR(B $B@/I'(B$B!&(B $B2CF#(B $BCh8w(B$B!&(B $BC]Fb(B $BBgJe(B$B!&(B $B;3:j(B $BAo(B$B!&(B $BBg6z(B $B=(@$(B
diamond
contact resistance
electron beam evaporated
SY-9787
14:40$B!A(B 15:00O318[$B>7BT9V1i(B] $BCb2=J*GvKl$NHy:Y9=B$@)8f$H%i%8%+%k$rMQ$$$?Dc29$G$N@.KlJ}K!(B
($BKL8+9)Bg(B) $B!{Ip;3(B $B??5](B$B!&(B $B:4F#(B $B>!(B$B!&(B $BLnLp(B $B8|(B
nitride thin film
sputtering
radical nitridization
SY-9130
(15:00$B!A(B15:40) ($B:BD9(B $BsnF#(B $B>f{J(B)
15:00$B!A(B 15:20O319$B5^B.>xCe$H$=$N>lMOM;7k>=2=$K$h$kBgN37B7k>=(BSi$BGvKl:n@=K!$N3+H/(B
($BAaBg@h?JM}9)(B) ($B3X(B)$B!{;3:j(B $BM*J?(B$B!&(B ($B@5(B)$BD9C+@n(B $B3>(B$B!&(B ($B@5(B)$BBgBt(B $BMxCK(B$B!&(B ($B@5(B)$BLnED(B $BM%(B
crystalline silicon thin films
vapor deposition
liquid phase crystallization
SY-9643
15:20$B!A(B 15:40O320CVD$B$K$h$k&A(B-Al2O3$BGvKl$NG[8~@-@)8f(B
($BElBg9)(B) ($B3X(B)$B!{@>_7(B $B7E(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B5~%;%i(B) $BC+^<(B $B1I?N(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BAz3@(B $B9,9@(B
CVD
Al2O3
crystal-orientation
SY-9827
$B9V1iH/I=%W%m%0%i%`(B
$B2=3X9)3X2q(B $BBh(B47$B2s=)5(Bg2q(B
(C) 2015 $B8x1W
Most recent update: 2015-08-26 10:00:42
For more information contact $B2=3X9)3X2qK\ItBg2q1?1D0Q0w2q(B $BBh(B47$B2s=)5(Bg2q(B $BLd$$9g$;78(B
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