Japanese page
SCEJ

SCEJ 50th Autumn Meeting (Kagoshima, 2018)

List of received applications (By topics code)

ST) SCEJ Trans-Division Symposium

ST-25. [Trans-Division Symposium] CVD and Dry Process

Organizer(s): Akiyama Yasunobu (Tokai Univ.), Tsukune Atsuhiro (Taiyo Nippon Sanso), Noda Suguru (Waseda Univ.)

Most recent update: 2018-12-17 03:35:01

The keywords that frequently used
in this topics code.		KeywordsNumber
CVD5*
cutting tool2
hard coating2
reaction kinetics1

ACKN
No.		Title/Author(s)KeywordsStyle
44[Invited lecture] CVD growth and growth mechanisms of graphene and related two-dimensional materials
(Kyushu U./AIST) Ago Hiroki		graphene
epitaxial growth
hexagonal boron nitride
O
113Flame-assisted spray synthesis of CsxWO3 nanoparticles and their optical properties
(Hiroshima U.) *(Stu)Hirano Tomoyuki, Nakakura Shuhei, (Stu)Rinaldi Febrigia Ghana, (Reg·APCE)Ogi Takashi		cesium tungsten bronze
flame-assisted spray pyrolysis
aerosol
O
142Investigation of trench-filling mechanism and the effect of adding HCl during 4H-SiC CVD
(AIST) *(Reg)Mochizuki Kazuhiro, Ji Shiyang, Adachi Kohei, Kosugi Ryoji, Yonezawa Yoshiyuki, Okumura Hajime		4H-SiC
trench filling
HCl
O
226Analysis of reaction kinetics of SiO2 atomic layer deposition with aminosilane-gases
(TTS) *(Reg)Kawakami M., Kagaya M., Mitsunari T., Sato J., Yabe K.		ALD
aminosilane
reaction kinetics
O
243[Review lecture] Thin film deposition and surface modification using species generated by catalytic decomposed reaction: Foundations and applications of HWCVD method
(Kyutech) Izumi Akira		HWCVD
Thin film
Surface modification
O
330[Invited lecture] Interface level formation at SiO2/Si by plasma etching
(Sony Semiconductor Manufacturing) *Nagahata Kazunori, Shigetoshi Takushi		Plasma
Etching
Damage
O
336Temperature field control of catalyst formation for gas-phase synthesis of single-wall carbon nanotubes
(Waseda U.) *(Stu)Namiki Katsuya, (Reg)Sugime Hisashi, (Reg)Ohsawa Toshio, (Reg)Noda Suguru		single-wall carbon nanotube
reaction field control
floating catalyst chemical vapor deposition
O
468[Review lecture] Development and prospects of hard coating for cutting tool using thermal CVD method
(Kyocera) (Cor)Tanibuchi Takahito		CVD
Cutting tool
Hard coating
O
561Synthesis of Al-rich fcc-TiAlN by thermal CVD (2)
(U. Tokyo) *(Stu)Yamaguchi Jun, Hirabaru Tomoko, (Kyocera) (Cor)Kubo Hayato, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Kyocera) (Cor)Tanibuchi Takahito, (U. Tokyo) (Reg)Shimogaki Yukihiro		CVD
TiAlN
cutting tool
O
576Photocatalytic activity of composite thin films prepared by deposition of Ag and TiO2 particles under visible light irradiation
(Hiroshima U.) *(Stu·PCEF)Masaki Yuya, Jiang Dianping, (Reg)Kubo Masaru, (Reg)Shimada Manabu, (Hiroshima U./ITS Surabaya) (Reg)Kusdianto K.		PVD
PECVD
nanoparticle
O
685Supercritical dying and impregnation for fabrication of porous carbon electrode on Li-O2/CO2 battery
(Tokyo Tech) *(Stu)Kunanusont N., (Reg)Shimoyama Y.		Li- O2/CO2 battery
supercritical carbon dioxide
ionogel binder
O
832Lithium-doped Zinc Oxide thin film's relative permittivity by LPCVD Method
(Tokai U.) *(Stu)Takemoto Satoshi, (Reg)Akiyama Yasunobu		CVD
Lithium-doped Zinc Oxide
Ferroelectric
O
879Study on reaction mechanism for fabricating high quality zinc oxide thin film by Mist CVD
(Kochi U. Tech.) *(Stu)Nishi Misaki, Hasegawa Ryou, Yasuoka Tatsuya, Ueda Mariko, Sakamoto Masahito, Satou Shouta, Phimolphan Ruttongja, Liu Li, Dang. T Gian, Kawaharamura Toshiyuki		Mist CVD
ZnO
reaction mechanism
O
882New alumina CVD process from alkyl aluminum
(Kyoto U.) *(Stu·PCEF)Nakamura Takumi, (Stu)Inokuti Kazuaki, (Stu)Nagata Kakeru, (Stu)Yakabi Ryo, (Reg)Kawase Motoaki		CVD
alkyl aluminum
alumina
O
905Guideline for uniform Cu film fabrication on high aspect ratio structure by supercritical fluid deposition
(U. Tokyo) *(Stu)Fujita Shotaro, (Reg)Deura Momoko, (Tokyo Tech) (Reg)Shimoyama Yusuke, (U. Tokyo) (Reg)Shimogaki Yukihiro, (Reg)Momose Takeshi		Supercritical fluid deposition
Diffusion coefficient
Kinetics
O
919Theoretical study of surface reaction process on SiC-CVI process
(U. Tokyo) *(Stu)Sato Noboru, (Reg)Naka Tomoaki, (Stu)Kondo Yoshifumi, (Reg)Funato Yuichi, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro		SiC
CVI
Surface Reaction
O
937Preparation and evaluation of TiB based films by RF plasma CVD
(Osaka Pref. U.) *(Stu)Kiyokawa Daichi, Fuji Kazuki, (Reg)Okamoto Naoki, (Reg)Saito Takeyasu		hard coating
plasma CVD
TiBCN
O
978Effect of hydrogen sulfide on pyrolyitic carbon CVD
(Kyoto U.) *(Stu·PCEF)Makino Yusaku, (Reg)Kawase Motoaki		CVD
Carbon
Hydrogen sulfide
O
1058Tetracene thin film formation for organic photovoltaics by temperature-driven supercritical fluid deposition
(U. Tokyo) *(Stu)Lee Yanshao, (Reg)Deura Momoko, (Tokyo Tech) (Reg)Shimoyama Yusuke, (U. Tokyo) (Reg)Shimogaki Yukihiro, (Reg)Momose Takeshi		Temperature-driven Supercritical Fluid Deposition
Crystallization
Tetracene
O
List of received applications (By topics code)
List of received applications
SCEJ 50th Autumn Meeting (Kagoshima, 2018)
(C) 2018 The Society of Chemical Engineers, Japan. . All rights reserved.
Most recent update: 2018-12-17 03:35:01
For more information contact Organizing Committee, SCEJ 50th Autumn Meeting (Kagoshima, 2018)
E-mail: inquiry-50fwww3.scej.org
This page was generated by easp 2.43; update.pl 2.37 (C)1999-2015 kawase