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SCEJ 51st Autumn Meeting (2020)

List of received applications (By topics code)

ST) SCEJ Trans-Division Symposium

ST-22. [Trans-Division Symposium] CVD and Dry Processes

Organizer(s): Shimada Manabu (Hiroshima Univ.), Habuka Hitoshi (Yokohama Nat. Univ.), Nishida Satoshi (Gifu Univ.), Sugime Hisashi (Waseda Univ.)

CVD and other dry processes are core technology in the industry applications for solar cell, electronics devices, MEMS, and functional coatings. This symposium motivates to discuss the logical optimization and design for controlling the microstructure and functions of thin films and fine particles produced by CVD or other dry processes based on the theoretical understanding of reaction mechanisms. Young Researcher Award will be given to distinguished young speakers chosen at the session.

Most recent update: 2021-02-07 15:20:01

The keywords that frequently used
in this topics code.		KeywordsNumber
CVD7**
Flame spray pyrolysis3*
carbon nanotube3*
SiC3*
plasma-enhanced chemical vapor deposition2
Tubular flame2
CH3SiCl32
AlOx1

ACKN
No.		Title/Author(s)KeywordsStyle
13Residual stress in gas barrier silica film prepared by plasma chemical vapor deposition
(Kyoto U.) *(Reg)Kawase M., (Stu)Hirata S., (Stu)Wakisaka T.		CVD
Residual stress
Silica gas barrier film
O
55Preparation of nanostructured particles using direct spray type tubular flames
(Hiroshima U.) *(Stu)Hirano Tomoyuki, (Reg·APCE)Ogi Takashi		Nanostructured particle
Flame spray pyrolysis
Tubular flame
O
62QCM for evaluating gas flow in Minimal-CVD reactor
(Yokohama Nat. U.) Otani Mana, *(Reg)Habuka Hitoshi, (Minimal Fab) Ikeda Shin-ichi, Ishida Yuuki, Hara Shiro		CVD
QCM
Minimal
O
110[Review lecture] Future Prospects of Plasma Deposition Technology
(Tohoku U. NICHe) Goto Tetsuya		plasma enhanced deposition
plasma equipment design
reactive species control
O
111[Review lecture] Concept, design and future of semi-batch type ALD equipment and process
(TTS) *Katoh Hitoshi, Seshimo Yuji		ALD
Equipment
Semi-Batch
O
112[Invited lecture] A new HVPE growth technique which brings high quality GaN substrates; maskless-3D
(Sciocs) Yoshida Takehiro		GaN substrate,
HVPE
low dislocation density
O
135Fabrication of SiO2 and Al2O3 insulator film by mist chemical vapor deposition
(U. Tokyo) *(Stu)Kinoshita Sayaka, (U. Tokyo ESC) (Reg)Sakai Enju, (U. Tokyo/U. Tokyo) (Reg)Tsuji Yoshiko		insulator
thin-film-transistor
mist chemical vapor deposition
O
153Kinetic analysis of TiAlN-CVD process for construction of reaction model (2)
(U. Tokyo) *(Stu)Yamaguchi Jun, Hirabaru Tomoko, (Kyocera) (Cor)Kubo Hayato, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Kyocera) (Cor)Tanibuchi Takahito, (U. Tokyo) (Reg)Shimogaki Yukihiro		CVD
TiAlN
cutting tool
O
174Synthesis of metal particles by tubular flames
(Hiroshima U.) *(Stu)Kikkawa Jun, (Stu)Hirano Tomoyuki, (Reg·APCE)Ogi Takashi		Metal particles
Flame spray pyrolysis
Tubular flame
O
175Continuous synthesis of carbon nanoparticle-nanotube composite by high-temperature pyrolysis of acetylene
(Waseda U.) *(Stu)Urata Yua, Otahara Ryoya, (Reg)Osawa Toshio, (Reg)Sugime Hisashi, (Denka) Nako Yuki, Okada Takuya, (Waseda U.) (Reg)Noda Suguru		Carbon nanoparticle
Carbon nanotube
CVD
O
213Effects of dispersant for PECVD process with concurrent use of solid raw material upon synthesized composite thin films
(Hiroshima U.) *(Reg)Shimada Manabu, (PCEF)Takahashi Kazuma, (Reg)Kubo Masaru		titanium dioxide
carbon nanotube
photocatalyst
O
230Fabrication and hierarchical structure control of carbon nanotube electron field emitter for X-ray tube
(Waseda U.) *(Stu)Yasui Kotaro, Kitagawa Sae, (Reg)Sugime Hisashi, (Meidensha) Ochi Hayato, Takahashi Daizo, (Waseda U.) (Reg)Noda Suguru		carbon nanotube
electron field emitter
hierarchical structure control
O
248[Invited lecture] Characterization of silicon and nitrogen doped diamond-like carbon thin films prepared by plasma-enhanced chemical vapor deposition
(Hirosaki U.) Nakazawa Hideki		diamond-like carbon
plasma-enhanced chemical vapor deposition
silicon
O
306Synthesis of AlOx thin films by mist-CVD for electrical insulator layer of FETs
(Saitama U.) *(Stu)Arifuzzaman Rajib, Shida Tomohiro, Abdul Kuddus, Ueno Keiji, Shirai Hajime		mist-CVD
AlOx
O
310ZnO coating of carbon nanotubes by in-flight PECVD method
(Hiroshima U.) *(Stu)Yoshitake Haruki, (Stu)Hemanth Lakshmipura R., (Reg)Kubo Masaru, (Reg)Shimada Manabu		plasma-enhanced chemical vapor deposition
nanocoating
aerosol
O
414Effects of the central metals of perovskite thin film on structure
(Kyoto U.) *(Stu·PCEF)Matsuda Megumi, (Stu)Murakami Takanori, (Stu)Matsumura Nanzuki, (Reg)Kawase Motoaki		CVD
perovskite
central metals
O
499Reaction mechanism analysis of polycrystalline SiC-CVD for high-speed, uniform growth process design
(U. Tokyo) *(Stu)Oku T., (Reg)Deura M., (Reg)Momose T., (Reg)Shimogaki Y.		Reaction model
SiC
CVD
O
504Time-evolution of film thickness profiles by level set method during CVD multiscale simulation
(U. Tokyo) *(Stu)Zhang Jin, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro		multiscale simulation
chemical vapor deposition
level set method
O
556Effect of SiCl4 addition for SiC-CVD from MTS/H2
(U. Tokyo) *(Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (Stu)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro		CVD
SiC
Recycle
O
665Theoretical study for modeling surface reactions on SiC-CVI process
(U. Tokyo) *(Stu)Sato Noboru, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro		CH3SiCl3
SiC CVI
surface reaction
O
682Construction of surface reaction mechanism of SiC-CVI based on theoretical study
(U. Tokyo) *(Stu)Sato Noboru, (Stu)Kondo Yoshifumi, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (Reg)Fukushima Yasuyuki, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro		SiC-CVI
Surface reaction mechanism
CH3SiCl3
O
686Highly-loaded Ni on CeO2 prepared by flame spray pyrolysis
(Yamagata U.) (Reg)Fujiwara Kakeru		Ni
CeO2
Flame spray pyrolysis
O
781Production and Characterization of Organic Thin Films by Rapid Expansion of Supercritical Solutions (RESS) Using CO2
(Kanazawa U.) *(Stu)Sakamoto Y., Kobayashi T., Kiyosawa T., (Stu)Kamata W., (Reg)Uchida H.		RESS
Organic thin films
Supercritical CO2
O
822Manufacture of SiCf/SiC by chlorine-free Chemical Vapor Infiltration
(U. Tokyo) *(Stu)Aji Ryosuke, (Stu)Otaka Yuhei, (Stu)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro		SiC
chemical vapor infiltration
tetramethylsilane
O
List of received applications (By topics code)
List of received applications
SCEJ 51st Autumn Meeting (2020)
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Most recent update: 2021-02-07 15:20:01
For more information contact Organizing Committee, SCEJ 51st Autumn Meeting (2020)
E-mail: inquiry-51fwww3.scej.org
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