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SCEJ 56th Autumn Meeting (Tokyo, 2025)

Program search result : 玉置 直樹 : 7 programs

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Authors and Chairs (J) field exact matches “玉置 直樹”; 7 programs are found. (“Poster with Flash” presentations are double-counted.)
The search results are sorted by the start time.

TimePaper
ID		Title / AuthorsKeywordsTopic codeAck.
number
Day 1
15:00– 17:20		   Chair: Fujiwara Kakeru, Tamaoki Naoki
EE119[Invited lecture] Synthesis of silica membranes using atmospheric-pressure plasma and their application in gas separation
(Hiroshima U.) (Reg)Nagasawa Hiroki
plasma
CVD
gas separation
ST-26731
EE121Deposition characteristics of TiSiCN by DC plasma CVD
(Osaka Metro. U.) *(Stu)Kurogi Rizu, (Reg)Saito Takeyasu, (Reg)Okamoto Naoki, Kawamoto Mika
DC plasma CVD
TiSiCN
ST-26914
EE122Growth Dynamics of Bismuth-Based Perovskite Thin Films via Chemical Vapor Deposition
(Kyoto U.) *(Int)Yang Ziguang, (Reg)Kawase Motoaki
Chemical vapor deposition
Perovskite solar cell
crystal orientation control
ST-26888
EE123TMA/NH3-based FM-CVD Process for High-Thermal-Conductivity AlN Films at 400 oC
(U. Tokyo) *(Stu)Hatakeyama Daiki, (Reg)Otaka Yuhei, (Reg)Yamaguchi Jun, (Reg)Tamaoki Naoki, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
FM-CVD
3DIC
AlN
ST-26338
EE124Investigation of the Growth Enhancement Effect of Pd on Co-ALD
(U. Tokyo) *(Reg)Deng Yubin, (Reg)Yamaguchi Jun, (Reg)Otaka Yuhei, (Stu)Nagai Souga, (Reg)Sato Noboru, (Reg)Tamaoki Naoki, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
Nucleation enhancer
ALD
ULSI
ST-26305
EE125Investigation of alkyl chain length dependence of inhibitors for area selective deposition of HfO2
(Kioxia) *(Reg)Tanuma Masakazu, Matsuba Hiroshi, Asakawa Koji, Fukumizu Hiroyuki
Area selective deposition
Inhibitor
ST-26740
Day 1
16:20– 16:40		EE123TMA/NH3-based FM-CVD Process for High-Thermal-Conductivity AlN Films at 400 oC
(U. Tokyo) *(Stu)Hatakeyama Daiki, (Reg)Otaka Yuhei, (Reg)Yamaguchi Jun, (Reg)Tamaoki Naoki, (Reg)Sato Noboru, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
FM-CVD
3DIC
AlN
ST-26338
Day 1
16:40– 17:00		EE124Investigation of the Growth Enhancement Effect of Pd on Co-ALD
(U. Tokyo) *(Reg)Deng Yubin, (Reg)Yamaguchi Jun, (Reg)Otaka Yuhei, (Stu)Nagai Souga, (Reg)Sato Noboru, (Reg)Tamaoki Naoki, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
Nucleation enhancer
ALD
ULSI
ST-26305
Day 2
9:00– 9:20		EE201Evaluation of the Effects of Wall Adsorption and Transport Phenomena on QCM-Based Adsorption Kinetics Analysis in ALD
(U. Tokyo) *(Reg)Yamaguchi Jun, (Stu)Wu Yuxuan, (Reg)Sato Noboru, (Reg)Tamaoki Naoki, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
ALD
Atomic Layer Deposition
QCM
ST-26806
Day 2
10:00– 10:20		EE204Reaction Mechanism Analysis of Mo-CVD/ALD using Mo(CO)6
(U. Tokyo) *(Stu)Nagai Souga, Obara Soken, (U. Tokyo) (Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Otaka Yuhei, (Reg)Tamaoki Naoki, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
Mo(CO)6
step coverage
interconnect
ST-26405
Day 2
13:40– 14:00		EE215Steric Hindrance Effects and Reaction Kinetics in Co-ALD Using CCTBA Precursor
(U. Tokyo) *(Reg)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Tamaoki Naoki, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
ALD
Atomic Layer Deposition
ST-26801
Day 2
14:00– 14:20		EE216Molecular dynamics simulations of precursor adsorption in the Co-ALD process using neural network potentials
(U. Tokyo) *(Reg)Tamaoki Naoki, (Reg)Sato Noboru, (Reg)Yamaguchi Jun, (Reg)Tsukune Atsuhiro, (Reg)Shimogaki Yukihiro
Atomic layer deposition
Neural network potential
Growth per cycle
ST-26347

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SCEJ 56th Autumn Meeting (Tokyo, 2025)

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