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SCEJ 81st Annual Meeting (2016)

List of received applications (By topics code)


5) Chemical reaction engineering

5-h. CVD & dry processes

Most recent update: 2016-05-19 11:21:01

The keywords that frequently used
in this topics code.
KeywordsNumber
chemical vapor deposition9***
carbon nanotubes8**
graphene5*
CVD5*
fluidized bed3*
SiC3*
crystal growth3*
methyltrichlorosilane2
flame synthesis2
single-wall carbon nanotubes2
dry-etching2
aerosol catalysts2
PZT capacitors1

ACKN
No.
Title/Author(s)KeywordsStyle
123Continuous gas-phase production of hybrid carbon nanoparticles with nanotubes
(Waseda U.) *(Stu)Kuriya Masaaki, (Ful)Hasegawa Kei, (Ful)Osawa Toshio, (Ful)Noda Suguru
carbon nanotubes
carbon nanoparticles
continuous production
P
180Direct synthesis of graphene on SiO2 by dissolving carbon to and Cl2 etching of Co films
(Waseda U.) *(Stu)Kishida Yuri, (Ful)Hasegawa Kei, (Ful)Noda Suguru
graphene
crystal growth
dry-etching
P
216Rapid vapor deposition and mechanical separation of large-grain crystalline Si thin films on/from graphitic substrates
(Waseda U.) *(Stu)Yamasaki Yuhei, (Ful)Hasegawa Kei, (Ful)Osawa Toshio, (Ful)Noda Suguru
crystalline silicon thin films
lift-off process
crystal growth
P
273Flame synthesis of single-wall carbon nanotubes and reaction field control for their quality improvement
(Waseda U.) *(Stu)Okada Shohei, (Ful)Hasegawa Kei, (Ful)Osawa Toshio, (Ful)Noda Suguru
single-wall carbon nanotubes
flame synthesis
reaction field control
P
334Controlled formation of graphene using epitaxial Cu film catalyst rapidly deposited on sapphire substrates
(Waseda U.) *(Stu)Minamide Taisuke, (Stu)Aoi Shigeki, Okawa Asahi, (Ful)Hasegawa Kei, (Ful)Noda Suguru
graphene
chemical vapor deposition
epitaxial growth
P
338Direct growth and structural control of graphene films on dielectric substrates by "etching-precipitation" method
(Waseda U.) *(Stu)Akiba Sachie, (U. Tokyo) Kosaka Masaki, (Waseda U.) (Ful)Hasegawa Kei, (Ful)Noda Suguru
graphene
crystal growth
dry-etching
P
349Synthesis of graphene on Cu foils from CH4 and CO and mechanism analysis based on rate process and equilibrium
(Waseda U.) *(Stu)Nagai Yukuya, Okawa Asahi, (Ful)Hasegawa Kei, (Ful)Noda Suguru
graphene
chemical vapor deposition
disproportionation reaction
P
358Tailor made fabrication of carbon nanotube structures on three-dimensional aluminum substrates
(Waseda U.) *(Stu)Yoshihara Yu, (Ful)Hasegawa Kei, (DENSO CORP. Res. Labs.) Ooshima Hisayoshi, (Waseda U.) (Ful)Noda Suguru
carbon nanotubes
aluminum substrates
three-dimensional structure
P
402Roles of pre-anneal treatment for graphene CVD growth
(Fukuoka U.) *Ueno M., *(Ful)Yoshihara N., (Ful)Noda M.
graphene
pre-anneal
chemical vapor deposition
O
468Fluidized bed production of carbon nanotubes using gas-phase supported catalyst on ceramic powders
(Waseda U.) *(Stu)Kawabata Kosuke, (Ful)Hasegawa Kei, (Ful)Osawa Toshio, (Ful)Noda Suguru
carbon nanotubes
fluidized bed
chemical vapor deposition
P
477Fluidized bed production of single-wall carbon nanotubes using carefully sputtered catalyst on beads
(Waseda U.) *(Stu)Hachiya Soichiro, Chen Zhongming, (Stu)Kawabata Kosuke, (Ful)Hasegawa Kei, (Ful)Osawa Toshio, (Ful)Noda Suguru
single-wall carbon nanotubes
fluidized bed
chemical vapor deposition
P
628A study of deposition suppression on side-walls in vertical rotating disk reactor
(Toyota Central R&D Labs., Inc.) *(Ful)Makino Soichiro, (Cor)Nakashima Kenji, (Cor)Inagaki Masahide, (Ful)Kozawa Takahiro, (Cor)Horinouchi Nariaki
CVD
CFD
deposition
O
739Continuous production of carbon nanotubes by feeding supported catalysts to the gas flow
(Waseda U.) *(Stu)Oba Ittetsu, (Ful)Hasegawa Kei, (Ful)Osawa Toshio, (Hodogaya chemical) Tsukada Takayuki, (Waseda U.) (Ful)Noda Suguru
carbon nanotubes
aerosol catalysts
chemical vapor deposition
P
762Structure formation of composite thin films by vapor/solid-precursor PECVD
(Hiroshima U.) *(Ful)Kubo Masaru, *(Ful)Shimada Manabu, (Stu·PCEF)Taguchi Tomoya
composite material
plasma synthesis
aerosol nanoparticle deposition
O
800Process development for highly conformal filling of SiC-CVI using a sacrificial layer
(U. Tokyo) *(Stu)Shima K., (Stu)Sato N., (Stu)Funato Y., (IHI) (Ful)Fukushima Y., (U. Tokyo) (Ful)Momose T., (Ful)Shimogaki Y.
CVD
SiC
methyltrichlorosilane
O
812Effect of temperature and pressure on SiC-CVI using ultra high aspect ratio features
(U. Tokyo) *(Stu)Shima K., (Stu)Sato N., (Stu)Funato Y., (IHI) (Ful)Fukushima Y., (U. Tokyo) (Ful)Momose T., (Ful)Shimogaki Y.
CVD
SiC
methyltrichlorosilane
O
817Flame synthesis of carbon nanotube (CNT) through diesel engine using floating catalysts
(Tokyo Tech) *(Stu)Suzuki S., (Ful)Mori S.
Carbon nanotube
flame synthesis
diesel
P
883Gas-phase continuous production of carbon nanotubes of smaller diameters at higher yields
(Waseda U.) *(Ful)Noda Suguru, Yamaguchi Mai, (Stu)Okada Shohei, (Stu)Oba Ittetsu, (Stu)Sugino Yusuke, (Stu)Kuriya Masaaki, (Ful)Hasegawa Kei, (Ful)Osawa Toshio
carbon nanotubes
chemical vapor deposition
aerosol catalysts
O
886On-substrate synthesis of carbon nanotubes for device applications
(Waseda U.) *(Ful)Noda Suguru, (U. Tokyo) Na Nuri, (Waseda U.) (Stu)Kobayashi Shunji, (Stu)Takabatake Mami, (Stu)Yoshihara Yu, (Ful)Hasegawa Kei, (Ful)Osawa Toshio
carbon nanotubes
chemical vapor deposition
self-organization
O
894Fluidized-bed production of long carbon nanotubes and creation of three-dimensional electrodes for electric storage devices
(Waseda U.) *(Ful)Noda Suguru, Chen Zhongming, (Stu)Kawabata Kosuke, (Stu)Hachiya Soichiro, Quintero Ricardo, (Stu)Xu Naiao, (Stu)Narubayashi Misato, (Stu)Hori Keisuke, (Stu)Kowase Takayuki, (Ful)Hasegawa Kei, (Ful)Osawa Toshio
carbon nanotubes
fluidized bed
electric storage devices
O
895The deposition rate of the zinc oxide thin film growth by using a cold wall type CVD reactor.
(Tokai U.) *(Stu)Kuroda Shingo, Yokoyama Yuki, Watanabe Masatoshi, Okubo Tatsuo, (Ful)Akiyama Yasunobu
CVD
Zinc oxide
transparent conductive film
P
905Rapid vapor deposition of active materials and current collectors toward high-capacity, light-weight electric storage devices
(Waseda U.) *(Ful)Noda Suguru, (U. Tokyo) Lee Jungho, (Waseda U.) (Stu)Aoi Shigeki, (Stu)Honda Yoichiro, (Ful)Hasegawa Kei, (Ful)Osawa Toshio
vacuum vapor deposition
thin films
lithium secondary batteries
O
906Catalyst Nucleation and Carbon Nanotube Growth from Flame-Synthesized Co-Al-O Nanopowders at 10 Second Time Scale
(Waseda U.) *(Stu)Shirae Hiroyuki, (Ful)Hasegawa Kei, (U. Michigan) Yi Eongyu, Laine Richard, (Waseda U.) (Ful)Noda Suguru
carbon nanotubes
cobalt nanoparticles
chemical vapor deposition
O
910Construction of the overall reaction model for opitmizing SiC-CVD using Methyltrichlorosilane
(U. Tokyo) *(Stu)Funato Y., (Stu)Sato N., (Stu)Shima K., (IHI) (Ful)Fukushima Y., (U. Tokyo) (Ful)Momose T., (Ful)Shimogaki Y.
SiC
CVD
Modelization
O
976Fabrication and electrical properties of the PZT capacitors on Pt bottom electrodes with different orientation
(Osaka Pref. U.) *(Stu)Amano T., (Stu)Takada Y., (Ful)Okamoto N., (Ful)Saito T., (Ful)Kondo K., Yoshimura T., Fujimura N., (Osaka.U.) Higuchi K., Kitajima A.
Ferroelectricity
Orientation
PZT capacitors
P

List of received applications (By topics code)

List of received applications
SCEJ 81st Annual Meeting (2016)

(C) 2016 The Society of Chemical Engineers, Japan. . All rights reserved.
Most recent update: 2016-05-19 11:21:01
For more information contact Organizing Committee, SCEJ 81st Annual Meeting (2016)
E-mail: inquiry-81awww3.scej.org
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