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SCEJ 88th Annual Meeting (Tokyo, 2023) / / IChES 2023

List of received applications (By topics code)

5) Chemical reaction engineering

5-h. CVD & dry processes

Most recent update: 2023-05-11 20:44:01

The keywords that frequently used
in this topics code.		KeywordsNumber
CVD3*
Chemical vapor deposition2
reflectance1

ACKN
No.		Title/Author(s)KeywordsStyle
7CVD process from dichlorosilane, boron trichloride and monomethylsilane gases
(Yokohama Nat. U.) Otani Mana, Muroi Mitsuko, *(Reg)Habuka Hitoshi		dihlorosilane
boron trichloride
monomethylsilane
O
79Synthesis of boron nitride nanotubes using boric acid as a boron source
(Waseda U.) *(Stu·PCEF)Ebisu Sota, Sawada Tetsuro, (Reg)Sugime Hisashi, (Reg)Osawa Toshio, (Reg)Noda Suguru		Boron nitride nanotube
Chemical vapor deposition
Template coating
P
157Fabrication of mono-crystalline Si film on porous Si by rapid vapor deposition method
(Waseda U.) *(Stu·PCEF)Ohashi Misako, (Reg)Osawa Toshio, (Reg)Noda Suguru		Mono-crystalline Si film
Rapid vapor deposition
Porous Si
P
217Density Function Theory Study of Copper bis(2,2,6,6-tetramethyl-3,5-heptanedionate) Adsorption on Cu (111) surface
(U. Tokyo) *(Stu)Wu Yuxuan, (Reg)Sato Noboru, (Stu)Yamaguchi Jun, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro		Atomic Layer Depositon
Density Function Theory
Surface Adsorption
O
245Refinement of surface reaction mechanism of SiC-CVI based on theoretical study
(U. Tokyo) *(Reg)Sato Noboru, (Stu)Kimura Shunsuke, (Stu)Otaka Yuhei, Wakiyama Tomoya, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro		SiC
CVI
surface reaction model
O
312Formation of texture on silicon substrates by alkaline etching, and evaluation of the texture
(Gifu U.) *(Stu)Nakagawa Masato, Komiyama Masaharu, (Reg)Nishida Satoshi		alkaline etching
silicon substrates
texture
P
516Study of Co deposition with Atomic Layer Deposition on an ultra light-weight X-ray telescope
(Tokyo Metro. U.) *(Stu)Tsuji Y., Ishi D., Fukushima A., Ezoe Y., Ishikawa K., Numazawa M., Inagaki A., Ueda Y., Morishita H., Sekiguchi L., Murakawa T., Yamaguchi K., Ishikawa R., Morimoto D., Yamada Y., (NAOJ) Mitsuda K.		Atomic Layer Deposition
micropore optics
x-ray
P
528The coke deposition rate from paraffins and olefins
(Kyoto U.) *(Stu)Nakano Shinji, (Reg)Fujitsuka Hiroyasu, (Reg)Kawase Motoaki		fouling
coking
CVD
O
540Aluminum nitride film production by chemical vapor deposition from triethylaluminum
(Kyoto U.) *(Stu)Murahashi Kousuke, (Stu)Li Yafei, (Reg)Kawase Motoaki		CVD
triethylaluminum
AlN
O
547Molecular Simulation Study on Effect of Group-III Precursors on III-V Compound Crystal Growth
(Kyoto U.) *(Stu)Li Yafei, (Stu)Murahashi Kousuke, (Reg)Kawase Motoaki		MOCVD
molecular simulations
III-V compound
O
554Chemical Vapor Deposition Rate Control of Bismuth-based Perovskite Thin Film for Photovoltaic Performances Improvement
(Kyoto U.) *(Int)Yang Ziguang, (Stu)Togami Keito, (Stu)Tanabe Maika, (Reg)Kawase Motoaki		Chemical vapor deposition
Methylammonium bismuth iodide
Molten bismuth
O
597In-situ visible light reflectance observation method for designing Co-ALD process with high substrate selectivity.
(U. Tokyo) *(Stu)Kimura Shunsuke, (Stu)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro		ALD
in-situ observation
reflectance
O
676CFD simulation of CVD reactors in the CH3SiCl3(MTS)/H2 system using a simple SiC growth model
(Nagoya U.) *(Stu)Ogawa Tatsuya, Fukumoto Kazui, (Reg)Machida Hiroshi, (Reg)Norinaga Koyo		CVD
MTS
CFD
P
705Investigation on pretreatment conditions for low-resistivity copper film formation on dielectrics using supercritical fluid deposition
(U. Tokyo) *(Stu)Nakajima Yusuke, Huang Yuyuan, (Reg)Shimogaki Yukihiro, (Reg)Momose Takeshi		SCFD
Polymer
resistivity
O
List of received applications (By topics code)
List of received applications
SCEJ 88th Annual Meeting (Tokyo, 2023)
IChES 2023
(C) 2023 The Society of Chemical Engineers, Japan. . All rights reserved.
Most recent update: 2023-05-11 20:44:01
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