SCEJ

SCEJ 45th Autumn Meeting (Okayama, 2013)

Hall and day program

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Hall D, Day 3

Most recent update: 2013-08-20 14:03:53
TimePaper
ID
Title / AutorsKeywordsTopic codeAck.
number
Symposium <CVD & Dry Process - Reaction Engineering for the Structure/Functions control>
(9:40–10:40) ( Shimada M., Tamaoki N.)
9:4010:00D303[Invited Lecture] Sputtering Synthesis of Complex Iron-Titanium Oxide Thin Films and Controlling Their Mixed Valence States
Fujii Tatsuo
reactive sputtering
Hematite-ilmenite solid solution
epitaxial thin
S-2353
10:0010:20D304Low temperature CVD and characterization of various TiC-based hardmaterials
Nezaki M, Masaoka H, Okamoto N, Saito T, Kondo K, Kan T
titanium carbide
hard coating
chemical vapor deposition
S-2946
10:2010:40D305The role of gas-phase reaction during Co-CVD using amidinate precursor
Suzuki Y., Shimizu H., Momose T., Shimogaki Y.
amidinate
cobalt
thermal CVD
S-2508
(10:40–12:00) ( Noda S., Miura Y.)
10:4011:00D306Fabrication and evaluation of ferroelectric capacitors on a highly oriented conductive oxide bottom electrodes
Takada Y., Tsuji T., Okamoto N., Saito T., Kondo K., Yosimura T., Fujimura N., Higuchi K., Kitajima A., Oshima A.
ferroelectric material
pulsed laser deposition
conductive oxide
S-2947
11:0011:20D307Process development for next generation DRAM electrode using a new Ru-CVD/ALD precursor
Kim Taewoong, Momose Takeshi, Shimogaki Yukihiro
Ruthenium
CVD
ALD
S-2605
11:2011:40D308Study on initial nucleation of Cu-CVD using amidinate precursor
Shima Kohei, Shimizu Hideharu, Momose Takeshi, Shimogaki Yukihiro
Cu-CVD
Nucleation
Amidinate
S-2959
11:4012:00D309[Invited Lecture] Novel Si-DRIE technique for future TSV packaging
Morikawa Yasuhiro
Si-DRIE
Scallop-free
TSV packaging
S-2356
(13:00–14:20) ( Akiyama Y., Miyake M.)
13:0013:20D313Kinetic study on Hot-wire-assisted Atomic Layer Deposition of Ni Thin Films
Yuan Guangjie, Shimizu Hideharu, Momose Takeshi, Shimogaki Yukihiro
Hot-wire-assisted ALD
Ni film
Kinetics
S-2803
13:2013:40D314Structural control of nanoparticle deposited films by annealing
Mantani Yuki, Kubo Masaru, Shimada Manabu
PECVD
Porous thin film
Sintering
S-2123
13:4014:00D315Kinetic studies on SiC-CVD process using organic chlorosilane by outlet gas analysis
Funato Yuichi, Sato Noboru, Fukushima Yasuyuki, Sugiura Hidetoshi, Hotozuka kozue, Momose takeshi, Shimogaki Yukihiro
CVD
Metyltrichlorosilane
Dimetyldichlorosilane
S-2587
14:0014:20D316Multiscale Analysis of SiC-CVD from Dimethyldichlorosilane
Sugiura Hidetoshi, Fukushima Yasuyuki, Sato Noboru, Funato Yuichi, Hotozuka Kozue, Momose Takeshi, Shimogaki Yukihiro
SiC
CVD
Dimethyldichlorosilane
S-2577
(14:20–15:40) ( Shimogaki Y., Hotoduka K.)
14:2014:40D317Analysis of localized silicon deposition in SiH4/H2 PE-CVD
Nishida Satoshi, Muta Hiroshi, Kuribayashi Shizuma
PE-CVD
silicon deposition
S-2454
14:4015:00D318Transient simulation of chemical vapor infiltration of carbon from methane for producing carbon fiber reinforced carbon
Norinaga Koyo, Shutou Hiroki, Tanaka Ryota, Kudo Shinji, Hayashi Jun-ichiro
reaction kinetics
transport phenomena
CVD
S-2899
15:0015:20D319In-flight coating of carbon nanotube
Kadomura Hirofumi, Kubo Masaru, Shimada Mnabu
composite
PECVD
nanoparticles
S-2124
15:2015:40D320Fluidized Bed CVD of Carbon Nanotubes Using a Heat-Exchange Reactor
Chen Zhongming, Kim Dong Young, Hasegawa Kei, Osawa Toshio, Noda Suguru
carbon nanotubes
fluidized bed
catalytic chemical vapor deposition
S-2729

Technical program
SCEJ 45th Autumn Meeting (Okayama, 2013)

© 2013 The Society of Chemical Engineers, Japan. All rights reserved.
Most recent update: 2013-08-20 14:03:53
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