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| Time | Paper ID | Title / Authors | Keywords | Topic code | Ack. number |
|---|---|---|---|---|---|
| SCEJ Division session SE-10. <Materials and Process in Electronics> | |||||
| (10:00–12:00) (Chair: Tokoro K., Kaneko Y.) | |||||
| N104 | Low TEC Copper Electrodeposition | Copper Electrodeposition Thermal Expansion Coefficient | SE-10 | 17 | |
| N105 | printed pattern of nucleating agent ink for electroless plating with micro-contact printing method | printed electronics Electrodeposition micro-contact printing | SE-10 | 217 | |
| N106 | Electrodeposition simulation in the manufacturing process of electrolytic copper foil | electrodeposition simulation electrolytic copper foil | SE-10 | 736 | |
| N107 | High-Speed Through Silicon Via (TSV) Filling | high speed TSV filling 3D packaging electrolyte optimization | SE-10 | 402 | |
| N108 | The modeling of TSV filling by using Monte Carlo Simulation | Monte Carlo Simulation Through-silicon via Additives | SE-10 | 340 | |
| N109 | Kinetic on Copper Damascene (Electroplating )and Cuprous Concentration Computation in the presence of Cl- and SPS | TSV filling Cuprous Copper plating kinetic | SE-10 | 419 | |
| (13:00–14:20) (Chair: Kondo K.) | |||||
| N113 | [Invited lecture] Microvia and Through-Hole Filling by Electroplating for Electronic Circuit Fabrication | Copper Via additive | SE-10 | 31 | |
| N115 | [Invited lecture] Device technology in Cognitive Computer System | デバイス CCS 半導体 | SE-10 | 107 | |
| (14:40–16:00) (Chair: Takeno Y., Orita N.) | |||||
| N118 | [Invited lecture] TSV solution in ULVAC | TSV Etcher Plasma | SE-10 | 23 | |
| N120 | [Invited lecture] Monte Calro computation of via filling and additive by Copper electrodeposition | Monte Calro Copper electrodeposition Additive | SE-10 | 25 | |
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