SCEJ 47th Autumn Meeting (Sapporo, 2015): Hall and day program

`SCEJ 47th Autumn Meeting (Sapporo, 2015)`

Hall and day program

Hall O, Day 3

Most recent update: 2015-08-26 10:00:42

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
SCEJ Division Symposium SY-9. <CVD & Dry Processes - Reaction Engineering for Controlling Microstructure and Functions>
(9:00–10:00) (Chair: Ikeda K.)
9:00– 9:20	O301	Improved methodology to evaluate reactivity of deposition species within fine trenches (U. Tokyo) *Funato Y., Shima K., Sato N., Sugiura H., Nakahara T., (IHI) Fukushima Y., (U. Tokyo) Momose T., Shimogaki Y.	reactivity analysis fine trench Chemical Vapor Deposition	SY-9	861
9:20– 9:40	O302	Modeling of chemical vapor infiltration using ultra high aspect-ratio microcavity (U. Tokyo) *Shima K., Sato N., Funato Y., Sugiura H., Nakahara T., (IHI) Fukushima Y., (U. Tokyo) Momose T., Shimogaki Y.	CVD SiC methyltrichlorosilane	SY-9	747
9:40– 10:00	O303	Effects of reactant hydrocarbons and substrate metals on CVD rate of pyrolytic carbon (Kyoto U.) *Baba S., Iwai T., Nagata K., Kawase M.	CVD Pyrolysis Carbon	SY-9	278
(10:00–11:00) (Chair: Mori S.)
10:00– 10:20	O304	Transient simulation for CVD process using alternative gases (Athenasys) Ikeda K.	CVD ALD simulation	SY-9	608
10:20– 10:40	O305	By-product Formation in a SiHCl₃-H₂ System for Silicon Film Deposition (Yokohama Nat. U.) Sakurai Ayumi, Saito Ayumi, *Habuka Hitoshi	Silicon epitaxial growth trichlorosilane by-products	SY-9	11
10:40– 11:00	O306	Construction of reaction mechanism of formation of deposit in exhaust of Si-Cl compounds CVD reactor (U. Tokyo) *Sato N., Shima K., Funato Y., Sugiura H., Nakahara T., (IHI) Fukushima Y., (U. Tokyo) Momose T., (NIAD-UE) Koshi M., (U. Tokyo) Shimogaki Y.	silicon-chlorine compounds by-products elementary reaction simulation	SY-9	840
(11:00–12:00) (Chair: Shimogaki Y.)
11:00– 11:20	O307	Analysis of sublimation purification process of organic semiconductor materials (U. Tokyo) *Iwao Takuya, Yamaguchi Yukio, Tsuji Yoshiko	sublimation purification organic semiconductors	SY-9	468
11:20– 11:40	O308	Preparation of Ag-TiO₂ composite films with nanoparticle codeposition by a gas phase method (Hiroshima U.) *Masuda H., Tai Y., Kubo M., Shimada M.	PECVD Nanoparticle synthesis PVD	SY-9	273
11:40– 12:00	O309	[Invited lecture] Design, synthesis and ALD assessment of organometallic precursors for semiconductor applications (Air Liquide) Dussarrat Christian	atomic layer deposition conformal growth reaction mechanism	SY-9	132
(13:00–14:00) (Chair: Noda S.)
13:00– 13:40	O313	[Invited lecture] Heteroepitaxial growth and of compound semiconductor nanowire (RCIQE, Hokkaido U.) *Tomioka Katsuhiro, Motohisa Junichi, Fukui Takashi	compound semiconductor nanowire heteroepitaxial growth	SY-9	128
13:40– 14:00	O315	Properties of zinc oxide thin films synthesized by CVD method. (Tokai U.) *Kuroda Shingo, Kubo Fumika, Yokoyama Yuki, Watanabe Masatoshi, Okubo Tatsuo, Akiyama Yasunobu	CVD Zinc oxide transparent conductive film	SY-9	767
(14:00–15:00) (Chair: Akiyama Y.)
14:00– 14:20	O316	Electrical properties of ferroelectric capacitors with conductive oxide electrodes fabricated under different oxygen pressure (Osaka Pref. U.) *Takada Y., Amano T., Okamoto N., Saito T., Kondo K., Yoshimura T., Fujimura N., (Osaka U.) Higuchi K., Kitajima A.	Ferroelectric capacitor pulsed laser deposition oxygen pressure	SY-9	645
14:20– 14:40	O317	Contact resistance evaluation of electron beam evaporated Ti compound/Pt/Au electrode on p-type diamond by transmission line model (Osaka Pref. U.) *Suzuki S., Okamoto N., Saito T., Kondo K., (AIST) Matsumoto T., Makino T., Ogura M., Kato H., Takeuchi D., Yamasaki S., Okushi H.	diamond contact resistance electron beam evaporated	SY-9	787
14:40– 15:00	O318	[Review lecture] Structural control and radical enhanced low temperature growth of nitride thin film (Kitami Inst. Tech.) *Takeyama Mayumi, Sato Masaru, Noya Atsushi	nitride thin film sputtering radical nitridization	SY-9	130
(15:00–15:40) (Chair: Saito T.)
15:00– 15:20	O319	Fabrication of large-grain crystalline Si thin films by rapid vapor deposition with in situ melt-crystallization (Waseda U.) *Yamasaki Yuhei, Hasegawa Kei, Osawa Toshio, Noda Suguru	crystalline silicon thin films vapor deposition liquid phase crystallization	SY-9	643
15:20– 15:40	O320	Crystal orientation control of CVD-coated Al₂O₃ layer (U. Tokyo) *Nishizawa Kei, Momose Takeshi, (Kyocera) Tanibuchi Takahito, (U. Tokyo) Shimogaki Yukihiro	CVD Al2O3 crystal-orientation	SY-9	827

Technical program
SCEJ 47th Autumn Meeting (Sapporo, 2015)

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Most recent update: 2015-08-26 10:00:42
For more information contact Organizing Committee, SCEJ 47th Autumn Meeting (Sapporo, 2015)
E-mail: inquiry-47f

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