$B9V1i(B
$B;~9o(B | $B9V1i(B
$BHV9f(B | $B9V1iBjL\!?H/I=| $B%-!<%o!<%I(B | $BJ,N`(B
$BHV9f(B | $B$BHV9f(B | |
|---|
| $BIt2q%7%s%]%8%&%`(B SY-9. <CVD$B!&%I%i%$%W%m%;%9!!!]9=B$!&5!G=@)8f$NH?1~9)3X!](B> |
|---|
| (9:00$B!A(B10:00) ($B:BD9(B $BCSED(B $B7=(B) |
| 9:00$B!A(B 9:20 | O301 | $BHy:Y%H%l%s%A$K$*$1$k@=KlJ*
($BElBg1!9)(B) ($B3X(B)$B!{gULg(B $BM$0l(B$B!&(B ($B3X(B)$BEh(B $B9IJ?(B$B!&(B ($B3X(B)$B:4F#(B $BEP(B$B!&(B $B?y1:(B $B=(=S(B$B!&(B ($B3X(B)$BCf86(B $BBsLi(B$B!&(B (IHI$B4pHW8&(B) ($B@5(B)$BJ!Eg(B $B9/G7(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B | reactivity analysis
fine trench
Chemical Vapor Deposition
| SY-9 | 861 |
|---|
| 9:20$B!A(B 9:40 | O302 | $BD69b%"%9%Z%/%HHf%_%/%m%-%c%S%F%#$rMQ$$$?(BSiC-CVI$BK!$N%b%G%j%s%0(B
($BElBg1!9)(B) ($B3X(B)$B!{Eh(B $B9IJ?(B$B!&(B ($B3X(B)$B:4F#(B $BEP(B$B!&(B ($B3X(B)$BgULg(B $BM$0l(B$B!&(B $B?y1:(B $B=(=S(B$B!&(B ($B3X(B)$BCf86(B $BBsLi(B$B!&(B (IHI$B4pHW8&(B) ($B@5(B)$BJ!Eg(B $B9/G7(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B@5(B)$BAz3@(B $B9,9@(B | CVD
SiC
methyltrichlorosilane
| SY-9 | 747 |
|---|
| 9:40$B!A(B 10:00 | O303 | $B86NAC:2=?eAG
($B5~Bg9)(B) ($B3X(B·$B5;4p(B)$B!{GO>l(B $BfFJ?(B$B!&(B ($B3X(B)$B4d0f(B $BK-I'(B$B!&(B ($B3X(B)$BD9ED(B $BfF(B$B!&(B ($B@5(B)$B2O@%(B $B85L@(B | CVD
Pyrolysis
Carbon
| SY-9 | 278 |
|---|
| (10:00$B!A(B11:00) ($B:BD9(B $B?9(B $B?-2p(B) |
| 10:00$B!A(B 10:20 | O304 | $BF3F~%,%9$r@Z$jBX$($k(BCVD$B%W%m%;%9$NHsDj>o%,%9N.$l%7%_%e%l!<%7%g%s(B
($B%"%F%J%7%9(B) ($B@5(B)$BCSED(B $B7=(B | CVD
ALD
simulation
| SY-9 | 608 |
|---|
| 10:20$B!A(B 10:40 | O305 | SiHCl3$B$K$h$k%7%j%3%s@.Kl;~$NI{@8@.J*7A@.5!9=(B
($B2#9qBg1!9)(B) $B:y0f(B $B$"$f$_(B$B!&(B $Bc7F#(B $B$"$fH~(B$B!&(B ($B@5(B)$B!{1)?<(B $BEy(B | Silicon epitaxial growth
trichlorosilane
by-products
| SY-9 | 11 |
|---|
| 10:40$B!A(B 11:00 | O306 | $B1vAG(B-$B%1%$AG4^2=9gJ*$rMQ$$$?(BCVD$B$G$N2
($BElBg1!9)(B) ($B3X(B)$B!{:4F#(B $BEP(B$B!&(B ($B3X(B)$BEh(B $B9IJ?(B$B!&(B ($B3X(B)$BgULg(B $BM$0l(B$B!&(B $B?y1:(B $B=(=S(B$B!&(B ($B3X(B)$BCf86(B $BBsLi(B$B!&(B (IHI$B4pHW8&(B) ($B@5(B)$BJ!Eg(B $B9/G7(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B3X0L$B!&(B ($BElBg1!9)(B) ($B@5(B)$BAz3@(B $B9,9@(B | silicon-chlorine compounds
by-products
elementary reaction simulation
| SY-9 | 840 |
|---|
| (11:00$B!A(B12:00) ($B:BD9(B $BAz3@(B $B9,9@(B) |
| 11:00$B!A(B 11:20 | O307 | $BM-5!H>F3BN:`NA>:2Z@:@=%W%m%;%9$N2r@O(B
($BElBg1!9)(B) ($B3X(B)$B!{4dCK(B $BBs:H(B$B!&(B ($B@5(B)$B;38}(B $BM34tIW(B$B!&(B ($BElBg4D0B%;(B/$BElBg1!9)(B) ($B@5(B)$BDT(B $B2B;R(B | sublimation
purification
organic semiconductors
| SY-9 | 468 |
|---|
| 11:20$B!A(B 11:40 | O308 | $B5$AjK!$K$h$k(BAg-TiO2$B%J%NN3;R:.9gBO@QKl$N:n@=(B
($B9-Bg1!9)(B) ($B3X(B·$B5;4p(B)$B!{A}ED(B $B1Q9b(B$B!&(B $BED0f(B $BM*2p(B$B!&(B ($B@5(B)$B5WJ](B $BM%(B$B!&(B ($B@5(B)$BEgED(B $B3X(B | PECVD
Nanoparticle synthesis
PVD
| SY-9 | 273 |
|---|
| 11:40$B!A(B 12:00 | O309 | [$B>7BT9V1i(B] $BH>F3BN%W%m%;%9MQM-5!6bB086NA$N@_7W!"9g@.$*$h$S(BALD$B$X$NE,MQ(B
($B%(%"!&%j%-!<%I(B) Dussarrat Christian | atomic layer deposition
conformal growth
reaction mechanism
| SY-9 | 132 |
|---|
| (13:00$B!A(B14:00) ($B:BD9(B $BLnED(B $BM%(B) |
| 13:00$B!A(B 13:40 | O313 | [$BE8K>9V1i(B] $B2=9gJ*H>F3BN%J%N%o%$%d$N%X%F%m%(%T%?%-%7%c%k@.D9$HE8K>(B
($BKLBgNL;R=8@Q%(%l%/%H%m%K%/%98&5f%;(B) $B!{IZ2,(B $B9n9-(B$B!&(B $BK\5W(B $B=g0l(B$B!&(B $BJ!0f(B $B9';V(B | compound semiconductor
nanowire
heteroepitaxial growth
| SY-9 | 128 |
|---|
| 13:40$B!A(B 14:00 | O315 | $BG.(BCVD $BK!$G:n@=$7$?;@2=0!1tGvKl$NFC@-(B
($BEl3$Bg1!9)(B) ($B3X(B)$B!{9uED(B $B?88c(B$B!&(B ($BEl3$Bg9)(B) $B5WJ](B $B;K9a(B$B!&(B $B2#;3(B $BM%5.(B$B!&(B $BEOn5(B $B2m=S(B$B!&(B ($BEl3$Bg1!9)(B) $BBg5WJ](B $BC#@8(B$B!&(B ($B@5(B)$B=);3(B $BBY?-(B | CVD
Zinc oxide
transparent conductive film
| SY-9 | 767 |
|---|
| (14:00$B!A(B15:00) ($B:BD9(B $B=);3(B $BBY?-(B) |
| 14:00$B!A(B 14:20 | O316 | $B0[$J$k;@AG05NO$G:n@=$7$?F3EE@-;@2=J*EE6K$rM-$9$k6/M6EEBN%-%c%Q%7%?$NEE5$FC@-(B
($B:eI\Bg1!9)(B) ($B3X(B)$B!{9bED(B $B`v;R(B$B!&(B ($B3X(B)$BE7Ln(B $BBY2O(B$B!&(B ($B@5(B)$B2,K\(B $B>0$B!&(B ($B@5(B)$BsnF#(B $B>f{J(B$B!&(B ($B@5(B)$B6aF#(B $BOBIW(B$B!&(B $B5HB<(B $BIp(B$B!&(B $BF#B<(B $B5*J8(B$B!&(B ($B:eBg;:8&(B) $BHu8}(B $B9(Fs(B$B!&(B $BKLEg(B $B>4(B | Ferroelectric capacitor
pulsed laser deposition
oxygen pressure
| SY-9 | 645 |
|---|
| 14:20$B!A(B 14:40 | O317 | p$B7?%@%$%d%b%s%I>e$K(BEB$B>xCeK!$G7A@.$7$?(BTi$B2=9gJ*(B/Pt/Au$BEE6K$N(BTLM$BI>2A(B
($B:eI\Bg1!9)(B) ($B3X(B)$B!{NkLZ(B $BAo0lO:(B$B!&(B ($B@5(B)$B2,K\(B $B>0$B!&(B ($B@5(B)$BsnF#(B $B>f{J(B$B!&(B ($B@5(B)$B6aF#(B $BOBIW(B$B!&(B ($B;:Am8&(B) $B>>K\(B $BMc(B$B!&(B $BKRLn(B $B=S@2(B$B!&(B $B>.AR(B $B@/I'(B$B!&(B $B2CF#(B $BCh8w(B$B!&(B $BC]Fb(B $BBgJe(B$B!&(B $B;3:j(B $BAo(B$B!&(B $BBg6z(B $B=(@$(B | diamond
contact resistance
electron beam evaporated
| SY-9 | 787 |
|---|
| 14:40$B!A(B 15:00 | O318 | [$B>7BT9V1i(B] $BCb2=J*GvKl$NHy:Y9=B$@)8f$H%i%8%+%k$rMQ$$$?Dc29$G$N@.KlJ}K!(B
($BKL8+9)Bg(B) $B!{Ip;3(B $B??5](B$B!&(B $B:4F#(B $B>!(B$B!&(B $BLnLp(B $B8|(B | nitride thin film
sputtering
radical nitridization
| SY-9 | 130 |
|---|
| (15:00$B!A(B15:40) ($B:BD9(B $BsnF#(B $B>f{J(B) |
| 15:00$B!A(B 15:20 | O319 | $B5^B.>xCe$H$=$N>lMOM;7k>=2=$K$h$kBgN37B7k>=(BSi$BGvKl:n@=K!$N3+H/(B
($BAaBg@h?JM}9)(B) ($B3X(B)$B!{;3:j(B $BM*J?(B$B!&(B ($B@5(B)$BD9C+@n(B $B3>(B$B!&(B ($B@5(B)$BBgBt(B $BMxCK(B$B!&(B ($B@5(B)$BLnED(B $BM%(B | crystalline silicon thin films
vapor deposition
liquid phase crystallization
| SY-9 | 643 |
|---|
| 15:20$B!A(B 15:40 | O320 | CVD$B$K$h$k&A(B-Al2O3$BGvKl$NG[8~@-@)8f(B
($BElBg9)(B) ($B3X(B)$B!{@>_7(B $B7E(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BI4@%(B $B7r(B$B!&(B ($B5~%;%i(B) $BC+^<(B $B1I?N(B$B!&(B ($BElBg1!9)(B) ($B@5(B)$BAz3@(B $B9,9@(B | CVD
Al2O3
crystal-orientation
| SY-9 | 827 |
|---|
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