Title (J) field includes “結晶”; 12 programs are found.
The search results are sorted by the start time.
Time | Paper ID | Title / Authors | Keywords | Topic code | Ack. number |
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Day 1 | D113 | Effect of high-pressure CO2 on antifungal itraconazole cocrystallization process with fatty acid media | cocrystal fatty acid high-pressure CO2 | 8-e | 585 |
Day 1 | J121 | [Featured presentation] Quality Control of Crystalline Particles by Combining Crystallization in High Shear Field | Crystallization Crystalline Particles High Shear Field | 12-g | 447 |
Day 1 | J122 | Investigation of crystallization operation for controlling the properties of ectoine crystalline particles forming solvates. | Ectoine Crystallization Properties of crystalline particles | 12-g | 597 |
Day 1 | J123 | Effects of aeration timing on size distribution of product crystalline particles in cooling crystallization | cooling crystallization size distribution aeration | 12-g | 692 |
Day 1 | J124 | Control of crystal size distribution in polymorph crystallization | Crystallization Crystal structure Crystal size distribution | 12-g | 640 |
Day 2 | PC239 | Size Control of Perylene Nanocrystals by Application of Reprecipitation Method | organic nanocrystal reprecipitation method micromixer | 12-d | 206 |
Day 2 | PC263 | The effect of the combination of the cooling mode and the ozone concentration on the crystal shape in cooling crystallization of glycine. | Crystallization Ozonation Tailor-made additives | 12-g | 277 |
Day 2 | PC264 | Evaluation of the crystal growth rate in continuous crystallization using an oscillatory helical reactor | helical reactor crystal growth rate continuous crystallization | 12-g | 426 |
Day 3 | PD306 | Entropy analysis of thermal convection transition phenomena during semiconductor single crystal growth | Thermal Convection Entropy Production Crystal Growth | 2-a | 606 |
Day 3 | G309 | CFD Simulation Study on factors influencing AlN compound single crystal growth | MOCVD CFD III-V compound | 5-h | 683 |
Day 3 | PE340 | Formation of porous layer, rapid epitaxy, and detachment of monocrystalline Si film on and from monocrystalline Si wafer | Monocrystalline Si film Rapid vapor deposition Porous Si | 5-h | 65 |
Day 3 | E319 | Dependence of Electrocatalytic Oxygen Reduction/Evolution Catalysis on Crystal Structure of Cobalt-Manganese Oxides | hydrogen electrocatalyst crystal structure | 9-e | 45 |
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SCEJ 89th Annual Meeting (Sakai, 2024)