Japanese page RELOAD
SCEJ 89th Annual Meeting (Sakai, 2024)
Program search result : 霜垣 幸浩 : 11 programs
The preprints can be viewed by clicking the Paper IDs.
The ID/PW sent to the Registered participants and invited persons are required.
The ID/PW sent to the Registered participants and invited persons are required.
Authors and Chairs (J) field exact matches “霜垣 幸浩”; 11 programs are found.
The search results are sorted by the start time.
| Time | Paper ID | Title / Authors | Keywords | Topic code | Ack. number |
|---|---|---|---|---|---|
| Organized Session (CVD Reactions Section, Division of Chemical Reaction Engineering) | |||||
| Day 2 | Chair: | ||||
| F201 | Reaction Rate Equation Determination of Chemical Vapor Deposited Bismuth-based Perovskite Thin Film | Chemical vapor deposition Methylammonium bismuth iodide Perovskite solar cell | 5-h | 686 | |
| F202 | Evaluation of Reactive sputtered MAX alloy thin films with reducing gas | sputtering MAX-phase | 5-h | 787 | |
| F203 | Rate analysis of carbon CVD from hydrocarbons with different degrees of unsaturation | CVD carbon coking | 5-h | 785 | |
| Day 2 | F206 | Reduction of reaction mechanism of SiC-CVI | SiC-CVI CH3SiCl3 Reduced model | 5-h | 562 |
| Day 2 | F207 | Research on improving uniformity in furnace and high speed SiC infiltration in the production of SiC-CMC using Chemical Vapor Infiltration method. | SiC CVI CVD | 5-h | 233 |
| Day 2 | F208 | Exploration of exhaust gas reforming conditions to improve yield and reduce by-product formation in SiC-CVI with high MTS partial pressure | CVI SiC Recycling | 5-h | 633 |
| Day 2 | F209 | Strategy for CVI process development in SiCf/SiC-CMC production | CVI SiC Process design | 5-h | 634 |
| Day 3 | G301 | Quantitative Analysis of Trimethylaluminum Physisorption for ALD | Atomic Layer Depositon Quartz Crystal Microbalance Surface Adsorption | 5-h | 383 |
| Day 3 | G302 | Study of ZrN thin film formation process using atomic layer deposition | ZrN ALD TEMAZ | 5-h | 273 |
| Day 3 | G303 | Development of Molybdenum Atomic Layer Deposition Process for Next Generation of ULSI Interconnect | Molybdenum ALD low resistivity | 5-h | 123 |
| Day 3 | G305 | Investigation of Co Thin Film Thermal Atomic Layer Etching Process | ALE atomic layer eching cobalt | 5-h | 516 |
| Day 3 | G306 | Investigation of Area Selective Co-ALD process utilizing in-situ observation of reflectance intensity. | ALD in-situ observation reflectance | 5-h | 232 |
| Day 3 | G307 | Investigation of Continuous Cu Film Formation Process on Polymer | Atomic Layer Depoition Copper on Polymer | 5-h | 531 |
| DispCtl: |
|---|
Technical program
Technical sessions (Wide)
(For narrow screen)
Session programs
Search in technical program
SCEJ 89th Annual Meeting (Sakai, 2024)
© 2024 The Society of Chemical Engineers, Japan. All rights reserved.For more information contact Organizing Committee of SCEJ 89th Annual Meeting
E-mail: inquiry-89a
www4.scej.org