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SCEJ 89th Annual Meeting (Sakai, 2024)
Program search result : Tsukune Atsuhiro : 10 programs
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Authors field exact matches “Tsukune Atsuhiro”; 10 programs are found.
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| Time | Paper ID | Title / Authors | Keywords | Topic code | Ack. number |
|---|---|---|---|---|---|
| Day 2 | F206 | Reduction of reaction mechanism of SiC-CVI | SiC-CVI CH3SiCl3 Reduced model | 5-h | 562 |
| Day 2 | F207 | Research on improving uniformity in furnace and high speed SiC infiltration in the production of SiC-CMC using Chemical Vapor Infiltration method. | SiC CVI CVD | 5-h | 233 |
| Day 2 | F208 | Exploration of exhaust gas reforming conditions to improve yield and reduce by-product formation in SiC-CVI with high MTS partial pressure | CVI SiC Recycling | 5-h | 633 |
| Day 2 | F209 | Strategy for CVI process development in SiCf/SiC-CMC production | CVI SiC Process design | 5-h | 634 |
| Day 3 | G301 | Quantitative Analysis of Trimethylaluminum Physisorption for ALD | Atomic Layer Depositon Quartz Crystal Microbalance Surface Adsorption | 5-h | 383 |
| Day 3 | G302 | Study of ZrN thin film formation process using atomic layer deposition | ZrN ALD TEMAZ | 5-h | 273 |
| Day 3 | G303 | Development of Molybdenum Atomic Layer Deposition Process for Next Generation of ULSI Interconnect | Molybdenum ALD low resistivity | 5-h | 123 |
| Day 3 | G305 | Investigation of Co Thin Film Thermal Atomic Layer Etching Process | ALE atomic layer eching cobalt | 5-h | 516 |
| Day 3 | G306 | Investigation of Area Selective Co-ALD process utilizing in-situ observation of reflectance intensity. | ALD in-situ observation reflectance | 5-h | 232 |
| Day 3 | G307 | Investigation of Continuous Cu Film Formation Process on Polymer | Atomic Layer Depoition Copper on Polymer | 5-h | 531 |
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SCEJ 89th Annual Meeting (Sakai, 2024)
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