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SCEJ 49th Autumn Meeting (Nagoya, 2017)

Last modified: 2017-09-06 10:00:00

Session programs : ST-26

The abstracts can be viewed by clicking the Paper IDs.
The ID/PW printed on the PROGRAM book are required.

ST-26 [Trans-Division Symposium]
CVD & Dry Processes -Reaction Engineering for the Structure / Functions Control-

Organizers: Shimoyama Yusuke (Tokyo Tech), Nishida Satoshi (Gifu Univ.), Ikeda Kei (ATHENASYS Co.,Ltd.)

CVD and other dry processes are core technology in the industry applications for solar cell, electronics devices, MEMS, and functional coatings. This symposium motivates to discuss the logical optimization and design for controlling the microstructure and functions of thin films and fine particles produced by CVD or other dry processes based on the theoretical understanding of reaction mechanisms. Young Researcher Award will be given to distinguished young speakers chosen at the session.

Hall BD, Day 1 | Hall BD, Day 2

TimePaper
ID
Title / AuthorsKeywordsTopic codeAck.
number
Hall BD(Bldg.2 3F 232), Day 1(Sep. 20)
(13:00–14:20) (Chair: Kawakami Masato)
13:0013:40BD113[Review lecture] A control of processes based on advanced plasma sciences and their future prospects
(Nagoya U.) *Hori Masaru, Ishikawa Kenji, Sekine Makoto
Plasma
Deposition
Etching
ST-26770
13:4014:00BD115Mass spectrometry of gas phase in plasma CVD of silica films
(Kyoto U.) *(Stu)Tanaka M., (Ful)Kawase M.
plasma CVD
silica
mass spectrometry
ST-26618
14:0014:20BD116Synthesis of Carbon Nanowalls by Plasma Enhanced CVD Utilizing ECR Discharge and Investigation of Their Parallelization
(Tokyo Tech) *(Stu)Suzuki Ryo, (Ful)Mori Shinsuke
carbon nanowalls
plasma enhanced CVD
ST-26875
(14:20–15:20) (Chair: Shimoyama Yusuke)
14:2014:40BD117Flame-synthesis of single-wall carbon nanotubes: control over reaction field, flow field and catalyst supply for their quality
(Waseda U.) *(Stu)Okada Shohei, (Ful)Sugime Hisashi, (Ful)Osawa Toshio, (Fujifilm) (Cor)Sugiura Hiroki, (Cor)Kataoka Shohei, (Cor)Igarashi Tatsuya, (Waseda U.) (Ful)Noda Suguru
single-wall carbon nanotubes
flame synthesis
reaction field control
ST-2661
14:4015:00BD118The role of sulfur for the growth of carbon nanotube in chemical vapor deposition
(Tokyo Tech) *(Stu)Suzuki Shunsuke, (Ful)Mori Shinsuke
carbon nanotube
sulfur
chemical vapor deposition
ST-2662
15:0015:20BD119Low temperature growth of ultra-high mass density carbon nanotube forests on conductive supports
(Waseda U.) (Ful)Sugime Hisashi
chemical vapor deposition
low temperature growth
lithography
ST-261003
(15:20–16:40) (Chair: Momose Takeshi)
15:2015:40BD120Effect of carbon monoxide on the growth of multi-walled carbon nanotube by chloride mediated CVD
(Shizuoka U.) *(Stu)Komatsubara K., Yamanashi H., Karita M., Nakano T., Inoue Y., (JNC) (Cor)Nagaoka H.
carbon nanotube
carbon monoxide
chemical vapor deposition
ST-26769
15:4016:00BD121Chirality selective synthesis of carbon nanotubes using binary catalyst optimized by combinatorial method
(Waseda U.) *(Stu)Edo Michiko, (Ful)Sugime Hisashi, (Ful)Noda Suguru
chemical vapor deposition
carbon nanotubes
chirality control
ST-26883
16:0016:20BD122Effect of reaction conditions on morphology of TiO2 layer formed on MWCNT by in-flight coating process
(Hiroshima U.) *(Stu·PCEF)Fukumoto Yoshihiko, (Ful)Kubo Masaru, (Hiroshima U./ITS Surabaya) (Ful)Kusdianto K., (Hiroshima U.) (Ful)Shimada Manabu
Nanocomposite
Plasma-enhanced chemical vapor deposition
Aerosolization
ST-26681
16:2016:40BD123[Invited lecture] Numerical simulation of composite materials production by chemical vapor infiltration using computational fluid dynamics coupled with chemical kinetics
(Nagoya U.) (Ful)Norinaga K.
chemical vapor infiltration
composite materials
numerical simulation
ST-26805
Hall BD(Bldg.2 3F 232), Day 2(Sep. 21)
(9:00–10:00) (Chair: Mori Shinsuke)
9:009:20BD201[Invited lecture] Reaction Engineering on the Supercritical Hydrothermal Synthesis
(Nagoya U.) (Ful)Takami S.
supercritical hydrothermal synthesis
metal oxide nanoparticles
reaction engineering
ST-26813
9:209:40BD202Porous carbon electrode fabricated from supercritical drying for Li-O2/CO2 battery
(Tokyo Tech) *(Stu)Kunanusont N., (Ful)Shimoyama Y.
supercritical drying
porous carbon electrode
Li-O2/CO2 battery
ST-26666
9:4010:00BD203Investigation of growth model on SiC-CVI process with high precursor concentration
(U. Tokyo) *(Stu)Naka Tomoaki, (Stu)Sato Noboru, (Ful)Shima Kohei, (Stu)Funato Yuichi, (IHI) (Cor)Fukushima Yasuyuki, (U. Tokyo) (Ful)Momose Takeshi, (Ful)Shimogaki Yukihiro
CVI
SiC
process
ST-26810
(10:00–11:00) (Chair: Ikeda Kei)
10:0010:20BD204Construction of overall reaction model on SiC-CVD and experimental verification
(U. Tokyo) *(Stu)Funato Yuichi, (Stu)Sato Noboru, (Ful)Shima Kohei, (Stu)Naka Tomoaki, (IHI) (Ful)Fukushima Yasuyuki, (U. Tokyo) (Ful)Momose Takeshi, (Ful)Shimogaki Yukihiro
SiC
CVD
modeling
ST-26923
10:2010:40BD205Multiscale analysis and simulation on trench filling process by chemical vapor deposition
(U. Tokyo) *(Stu)Funato Yuichi, (Stu)Sato Noboru, (Ful)Shima Kohei, (Stu)Naka Tomoaki, (IHI) (Ful)Fukushima Yasuyuki, (U. Tokyo) (Ful)Momose Takeshi, (Ful)Shimogaki Yukihiro
CVD
trench
Multiscale
ST-26942
10:4011:00BD206[Invited lecture] Development of 4H-SiC bulk single crystal growth by gas-source method
(DENSO) *(Cor)Makino Emi, (Cor)Tokuda Yuichiro, (Cor)Kanda Takahiro, (Cor)Sugiyama Naohiro, (Cor)Kuno Hironari, (CRIEPI) Hoshino Norihiro, Kamata Isaho, Tsuchida Hidekazu, (DENSO) (Cor)Kojima Jun
4H-SiC
gas-source method
fast growth
ST-26806
(11:00–12:00) (Chair: Noda Suguru)
11:0011:20BD207The precursor pressure dependence of the crystal structure of Ti1-xAlxN films by thermal CVD
(U. Tokyo) *(Stu)Sato Hiroki, Hirabaru Tomoko, (Kyocera) (Cor)Kubo Hayato, (U. Tokyo) (Ful)Momose Takeshi, (Kyocera) (Cor)Tanibuchi Takahito, (U. Tokyo) (Ful)Shimogaki Yukihiro
CVD
TiAlN
cutting tool
ST-26367
11:2011:40BD208Rate analysis of carbon CVD on inert surfaces from benzene
(Kyoto U.) *(Stu)Kamimura Shuhei, (Ful)Kawase Motoaki
CVD
Carbon
Benzene
ST-26609
11:4012:00BD209Reduction of by-products in exhaust gases of CVD from Si-Cl compounds enabled by additive gases
(U. Tokyo) *(Stu)Sato Noboru, (IHI) (Cor)Fukushima Yasuyuki, (U. Tokyo) (Stu)Funato Yuichi, (Ful)Shima Kohei, (Ful)Momose Takeshi, (NIAD-QE) Koshi Mitsuo, (U. Tokyo) (Ful)Shimogaki Yukihiro
silicon chlorine compounds
by-product
elementary reaction simulation
ST-26729
(13:00–14:40) (Chair: Nishida Satoshi)
13:0013:40BD213[Review lecture] Thin film deposition technologies for future high efficiency crystalline Si solar cells
(Toyota Technological Inst.) *Ohshita Yoshio, (Meiji U.) Nakamura Kyotarou, (Toyota Technological Inst.) Lee Hyunju, Kamioka Takefumi
Solar cells
passivation
CVD
ST-26800
13:4014:00BD215[Invited lecture] Ultra-high-speed coating of Diamond-Like Carbon by high-density plasma surrounding substrate and source gas blowing toward substrate
(Gifu U.) Kousaka Hiroyuki
Diamond-Like Carbon
Microwave
Plasma CVD
ST-26187
14:0014:20BD216Adhesion strength improvement of TiC-based hard coating layer by surface treated WC-Co
(Osaka Pref. U.) *(Stu)Tanaka Chihiro, (Stu)Kiyokawa Daichi, (Ful)Okamoto Naoki, (Ful)Saito Takeyasu, (Osaka U.) Higuchi Kouji, Kitajima Akira
adhesion strength
hard coating
cemented carbide
ST-26711
14:2014:40BD217Mechanism of fabrication of metal-organic framework HKUST-1 film by spray method
(Hiroshima U.) *(Ful)Kubo Masaru, (Stu)Sugahara Takuya, (Ful)Shimada Manabu
Porous materials
Crystal growth
Carbon nanotube composite
ST-26658

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SCEJ 49th Autumn Meeting (Nagoya, 2017)


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