ST-26 - Session programs - SCEJ 49th Autumn Meeting (Nagoya, 2017)

Japanese page

`SCEJ 49th Autumn Meeting (Nagoya, 2017)`

Last modified: 2017-09-06 10:00:00

Meeting Info.
Program
- Program Menu
- Tech. Sessions
- narrow view
- Day 1
- Day 2
- Day 3
By Session
- Session list
- SV/SP: Special
  - SV-1
  - SP-1
  - SP-2
  - SP-3
- HQ: Headquar.
  - HQ-11
  - HQ-12
  - HQ-13
  - HQ-14
  - HQ-15
- ST: Trans.Div.
  - ST-21
  - ST-22
  - ST-23
  - ST-24
  - ST-25
  - ST-26
  - ST-27
  - ST-28
  - ST-29
- SY: Div.(51-59)
  - SY-51 [PR]
  - SY-52 [FP]
  - SY-53 [FP]
  - SY-54 [FP]
  - SY-55 [FP]
  - SY-56 [HT]
  - SY-57 [SP]
  - SY-58 [SP]
  - SY-59 [SP]
- SY: Div.(60-69)
  - SY-60 [SP]
  - SY-61 [SP]
  - SY-62 [SP]
  - SY-63 [SP]
  - SY-64 [CR]
  - SY-65 [CR]
  - SY-66 [CR]
  - SY-67 [SI]
  - SY-68 [SI]
  - SY-69 [SI]
- SY: Div.(70-79)
  - SY-70 [BE]
  - SY-71 [BE]
  - SY-72 [BE]
  - SY-73 [BE]
  - SY-74 [BE]
  - SY-75 [SF]
  - SY-76 [EE]
  - SY-77 [SA]
  - SY-78 [EL]
  - SY-79 [MI]
- SY: Div.(80-89)
  - SY-80 [MI]
  - SY-81 [MI]
  - SY-82 [MI]
  - SY-83 [MI]
  - SY-84 [MI]
  - SY-85 [MI]
  - SY-86 [EN]
  - SY-87 [EN]
  - SY-88 [EN]
  - SY-89 [MT]
By Hall
- Hall list
- S: IB Bldg.
  - S: 2F Hall
- Ax: Bldg.1
- Bx: Bldg.2
- Cx: Bldg.3
- Dx: Bldg.7
  - DA: 1F 701
  - DB: 1F 702
- Ex: ES Bldg.
- P: IB Bldg.
- V: VBL
  - V: 3F VB Hall
Search/Index

Session programs : ST-26

The abstracts can be viewed by clicking the Paper IDs.
The ID/PW printed on the PROGRAM book are required.

ST-26 [Trans-Division Symposium]
CVD & Dry Processes -Reaction Engineering for the Structure / Functions Control-

Organizers:

Shimoyama Yusuke (Tokyo Tech), Nishida Satoshi (Gifu Univ.), Ikeda Kei (ATHENASYS Co.,Ltd.)

CVD and other dry processes are core technology in the industry applications for solar cell, electronics devices, MEMS, and functional coatings. This symposium motivates to discuss the logical optimization and design for controlling the microstructure and functions of thin films and fine particles produced by CVD or other dry processes based on the theoretical understanding of reaction mechanisms. Young Researcher Award will be given to distinguished young speakers chosen at the session.

Hall BD, Day 1 | Hall BD, Day 2

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
Hall BD(Bldg.2 3F 232), Day 1(Sep. 20)
(13:00–14:20) (Chair: Kawakami Masato)
13:00– 13:40	BD113	[Review lecture] A control of processes based on advanced plasma sciences and their future prospects (Nagoya U.) *Hori Masaru, Ishikawa Kenji, Sekine Makoto	Plasma Deposition Etching	ST-26	770
13:40– 14:00	BD115	Mass spectrometry of gas phase in plasma CVD of silica films (Kyoto U.) *(Stu)Tanaka M., (Ful)Kawase M.	plasma CVD silica mass spectrometry	ST-26	618
14:00– 14:20	BD116	Synthesis of Carbon Nanowalls by Plasma Enhanced CVD Utilizing ECR Discharge and Investigation of Their Parallelization (Tokyo Tech) *(Stu)Suzuki Ryo, (Ful)Mori Shinsuke	carbon nanowalls plasma enhanced CVD	ST-26	875
(14:20–15:20) (Chair: Shimoyama Yusuke)
14:20– 14:40	BD117	Flame-synthesis of single-wall carbon nanotubes: control over reaction field, flow field and catalyst supply for their quality (Waseda U.) *(Stu)Okada Shohei, (Ful)Sugime Hisashi, (Ful)Osawa Toshio, (Fujifilm) (Cor)Sugiura Hiroki, (Cor)Kataoka Shohei, (Cor)Igarashi Tatsuya, (Waseda U.) (Ful)Noda Suguru	single-wall carbon nanotubes flame synthesis reaction field control	ST-26	61
14:40– 15:00	BD118	The role of sulfur for the growth of carbon nanotube in chemical vapor deposition (Tokyo Tech) *(Stu)Suzuki Shunsuke, (Ful)Mori Shinsuke	carbon nanotube sulfur chemical vapor deposition	ST-26	62
15:00– 15:20	BD119	Low temperature growth of ultra-high mass density carbon nanotube forests on conductive supports (Waseda U.) (Ful)Sugime Hisashi	chemical vapor deposition low temperature growth lithography	ST-26	1003
(15:20–16:40) (Chair: Momose Takeshi)
15:20– 15:40	BD120	Effect of carbon monoxide on the growth of multi-walled carbon nanotube by chloride mediated CVD (Shizuoka U.) *(Stu)Komatsubara K., Yamanashi H., Karita M., Nakano T., Inoue Y., (JNC) (Cor)Nagaoka H.	carbon nanotube carbon monoxide chemical vapor deposition	ST-26	769
15:40– 16:00	BD121	Chirality selective synthesis of carbon nanotubes using binary catalyst optimized by combinatorial method (Waseda U.) *(Stu)Edo Michiko, (Ful)Sugime Hisashi, (Ful)Noda Suguru	chemical vapor deposition carbon nanotubes chirality control	ST-26	883
16:00– 16:20	BD122	Effect of reaction conditions on morphology of TiO₂ layer formed on MWCNT by in-flight coating process (Hiroshima U.) *(Stu·PCEF)Fukumoto Yoshihiko, (Ful)Kubo Masaru, (Hiroshima U./ITS Surabaya) (Ful)Kusdianto K., (Hiroshima U.) (Ful)Shimada Manabu	Nanocomposite Plasma-enhanced chemical vapor deposition Aerosolization	ST-26	681
16:20– 16:40	BD123	[Invited lecture] Numerical simulation of composite materials production by chemical vapor infiltration using computational fluid dynamics coupled with chemical kinetics (Nagoya U.) (Ful)Norinaga K.	chemical vapor infiltration composite materials numerical simulation	ST-26	805
Hall BD(Bldg.2 3F 232), Day 2(Sep. 21)
(9:00–10:00) (Chair: Mori Shinsuke)
9:00– 9:20	BD201	[Invited lecture] Reaction Engineering on the Supercritical Hydrothermal Synthesis (Nagoya U.) (Ful)Takami S.	supercritical hydrothermal synthesis metal oxide nanoparticles reaction engineering	ST-26	813
9:20– 9:40	BD202	Porous carbon electrode fabricated from supercritical drying for Li-O₂/CO₂ battery (Tokyo Tech) *(Stu)Kunanusont N., (Ful)Shimoyama Y.	supercritical drying porous carbon electrode Li-O2/CO2 battery	ST-26	666
9:40– 10:00	BD203	Investigation of growth model on SiC-CVI process with high precursor concentration (U. Tokyo) *(Stu)Naka Tomoaki, (Stu)Sato Noboru, (Ful)Shima Kohei, (Stu)Funato Yuichi, (IHI) (Cor)Fukushima Yasuyuki, (U. Tokyo) (Ful)Momose Takeshi, (Ful)Shimogaki Yukihiro	CVI SiC process	ST-26	810
(10:00–11:00) (Chair: Ikeda Kei)
10:00– 10:20	BD204	Construction of overall reaction model on SiC-CVD and experimental verification (U. Tokyo) *(Stu)Funato Yuichi, (Stu)Sato Noboru, (Ful)Shima Kohei, (Stu)Naka Tomoaki, (IHI) (Ful)Fukushima Yasuyuki, (U. Tokyo) (Ful)Momose Takeshi, (Ful)Shimogaki Yukihiro	SiC CVD modeling	ST-26	923
10:20– 10:40	BD205	Multiscale analysis and simulation on trench filling process by chemical vapor deposition (U. Tokyo) *(Stu)Funato Yuichi, (Stu)Sato Noboru, (Ful)Shima Kohei, (Stu)Naka Tomoaki, (IHI) (Ful)Fukushima Yasuyuki, (U. Tokyo) (Ful)Momose Takeshi, (Ful)Shimogaki Yukihiro	CVD trench Multiscale	ST-26	942
10:40– 11:00	BD206	[Invited lecture] Development of 4H-SiC bulk single crystal growth by gas-source method (DENSO) *(Cor)Makino Emi, (Cor)Tokuda Yuichiro, (Cor)Kanda Takahiro, (Cor)Sugiyama Naohiro, (Cor)Kuno Hironari, (CRIEPI) Hoshino Norihiro, Kamata Isaho, Tsuchida Hidekazu, (DENSO) (Cor)Kojima Jun	4H-SiC gas-source method fast growth	ST-26	806
(11:00–12:00) (Chair: Noda Suguru)
11:00– 11:20	BD207	The precursor pressure dependence of the crystal structure of Ti_1-xAl_xN films by thermal CVD (U. Tokyo) *(Stu)Sato Hiroki, Hirabaru Tomoko, (Kyocera) (Cor)Kubo Hayato, (U. Tokyo) (Ful)Momose Takeshi, (Kyocera) (Cor)Tanibuchi Takahito, (U. Tokyo) (Ful)Shimogaki Yukihiro	CVD TiAlN cutting tool	ST-26	367
11:20– 11:40	BD208	Rate analysis of carbon CVD on inert surfaces from benzene (Kyoto U.) *(Stu)Kamimura Shuhei, (Ful)Kawase Motoaki	CVD Carbon Benzene	ST-26	609
11:40– 12:00	BD209	Reduction of by-products in exhaust gases of CVD from Si-Cl compounds enabled by additive gases (U. Tokyo) *(Stu)Sato Noboru, (IHI) (Cor)Fukushima Yasuyuki, (U. Tokyo) (Stu)Funato Yuichi, (Ful)Shima Kohei, (Ful)Momose Takeshi, (NIAD-QE) Koshi Mitsuo, (U. Tokyo) (Ful)Shimogaki Yukihiro	silicon chlorine compounds by-product elementary reaction simulation	ST-26	729
(13:00–14:40) (Chair: Nishida Satoshi)
13:00– 13:40	BD213	[Review lecture] Thin film deposition technologies for future high efficiency crystalline Si solar cells (Toyota Technological Inst.) *Ohshita Yoshio, (Meiji U.) Nakamura Kyotarou, (Toyota Technological Inst.) Lee Hyunju, Kamioka Takefumi	Solar cells passivation CVD	ST-26	800
13:40– 14:00	BD215	[Invited lecture] Ultra-high-speed coating of Diamond-Like Carbon by high-density plasma surrounding substrate and source gas blowing toward substrate (Gifu U.) Kousaka Hiroyuki	Diamond-Like Carbon Microwave Plasma CVD	ST-26	187
14:00– 14:20	BD216	Adhesion strength improvement of TiC-based hard coating layer by surface treated WC-Co (Osaka Pref. U.) *(Stu)Tanaka Chihiro, (Stu)Kiyokawa Daichi, (Ful)Okamoto Naoki, (Ful)Saito Takeyasu, (Osaka U.) Higuchi Kouji, Kitajima Akira	adhesion strength hard coating cemented carbide	ST-26	711
14:20– 14:40	BD217	Mechanism of fabrication of metal-organic framework HKUST-1 film by spray method (Hiroshima U.) *(Ful)Kubo Masaru, (Stu)Sugahara Takuya, (Ful)Shimada Manabu	Porous materials Crystal growth Carbon nanotube composite	ST-26	658

Technical program
Technical sessions (Wide) (For narrow screen)
Session programs
Search in technical program
SCEJ 49th Autumn Meeting (Nagoya, 2017)

www3.scej.org

SCEJ 49th Autumn Meeting (Nagoya, 2017)

Session programs : ST-26

ST-26 [Trans-Division Symposium] CVD & Dry Processes -Reaction Engineering for the Structure / Functions Control-

`SCEJ 49th Autumn Meeting (Nagoya, 2017)`

ST-26 [Trans-Division Symposium]
CVD & Dry Processes -Reaction Engineering for the Structure / Functions Control-