シリコン - Program search result - SCEJ 82nd Annual Meeting (Tokyo, 2017)

`SCEJ 82nd Annual Meeting (Tokyo, 2017)`

Last modified: 2017-02-20 10:00:00

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Title (J) field includes “シリコン”; 5 programs are found.
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Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
Day 2 11:20– 11:40	E208	[Requested talk] Surface reaction design for silicon epitaxial growth based on the reactor simulation (Yokohama Nat. U.) *(Ful)Habuka Hitoshi, Watanabe Toru, Yamada Ayami, Saito Ayumi, Sakurai Ayumi	silicon epitaxial growth rate trichlorosilane silicon hydride	K-2	14
Day 2 13:40– 14:20	E215	[Invited lecture] Application of Cat-CVD technology to crystalline silicon solar cells (JAIST) *Ohdaira Keisuke, Trinh Cham Thi, Oikawa Takafumi, Seto Junichi, Koyama Koichi, Matsumura Hideki	catalytic chemical vapor deposition crystalline Si solar cell passivation	K-2	85
Day 3 10:00– 10:20	D304	Phase behavior and Volumetric properties of CO₂/Silicon Alkoxide/Polymer systems (Tokyo U. Sci.) *(Stu)Matsukawa Hiroaki, (Ful)Shimada Yuichiro, (Ful)Naya Masakazu, (Ful)Shono Atsushi, (AIST) (Ful)Yoda Satoshi, (Tokyo U. Sci.) (Ful)Otake Katsuto	Phase behavior Volumetric properties Polymer	1-a	412
Day 3 13:20– 15:20	PE346	In-situ Characterization of Pt catalyst on silicon Microchannel Wall by Ultraviolet Microspectroscopy (Nagoya U.) *(Stu)Asai Yusaku, (Ful)Yamada Hiroshi, (Ful)Tagawa Tomohiko	ultraviolet microspectroscopy microreactor dehydrogenation	5-a	566
Day 3 14:05– 14:55	X310	High speed silicon deposition in PE-CVD using a high speed jet. (Gifu U.) (Ful)Nishida Satoshi	CVD silicon high deposition rate	HQ-21	109

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SCEJ 82nd Annual Meeting (Tokyo, 2017)

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