Last modified: 2020-03-02 11:00:00
Authors field exact matches “Tsukune Atsuhiro”; 1 program is found.
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Time | Paper ID | Title / Authors | Keywords | Topic code | Ack. number |
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Organized Session (CVD Reactions Section, Division of Chemical Reaction Engineering) | |||||
Day 3 | Chair: | ||||
J313 | Theoretical study for modeling surface reactions on SiC-CVI process | CH3SiCl3 SiC CVI surface reaction | 5-h | 222 | |
J314 | Time-evolution of film thickness profiles by level set method during CVD multiscale simulation | multiscale simulation chemical vapor deposition level set method | 5-h | 462 | |
J315 | Effects of dispersant for PECVD process with concurrent use of solid raw material upon synthesized composite thin films | titanium dioxide carbon nanotube photocatalyst | 5-h | 572 | |
J316 | Residual stress in gas barrier silica film prepared by plasma chemical vapor deposition | CVD residual stress silica gas barrier film | 5-h | 608 | |
J317 | Development of methylammonium lead iodide perovskite film CVD process | CVD methylammonium lead iodide lead melt | 5-h | 614 |
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SCEJ 85th Annual Meeting (2020)