
Last modified: 2017-02-20 10:00:00
Authors field exact matches “Momose Takeshi”; 8 programs are found.
The search results are sorted by the start time.
| Time | Paper ID | Title / Authors | Keywords | Topic code | Ack. number |
|---|---|---|---|---|---|
| Day 1 | B120 | [Invited lecture] Thin film deposition using chemical reaction in supercritical fluid for high-aspect-ratio 3-dimensional features | Deposition Supercritical fluid Process development | K-1 | 335 |
| Day 2 | E205 | [Requested talk] Reaction Mechanism and Growth-rate Distribution in Metal-Organic Vapor-Phase Epitaxy of GaN | GaN MOVPE reaction mechanism | K-2 | 324 |
| Day 2 | G205 | 3-demontional capacitor fabrication using supercritical fluid deposition | supercritical fluid deposition 3-demontional capacitor | 8-e | 151 |
| Day 2 | Chair: | ||||
| E213 | [The SCEJ Award for Outstanding Asian Researcher and Engineer] Vapor-phase deposition of functional polymer films and their applications | initiated chemical vapor deposition functional polymer films electronic, separation, and biomedical applications | K-2 | 26 | |
| E215 | [Invited lecture] Application of Cat-CVD technology to crystalline silicon solar cells | catalytic chemical vapor deposition crystalline Si solar cell passivation | K-2 | 85 | |
| E217 | [Requested talk] Synthesis of carbon nitride using microwave plasma CVD | plasma CVD carbon nitride | K-2 | 477 | |
| E218 | [Requested talk] PEALD-TiO2 films synthesized via CCRF discharges | TiO2 PEALD deposition | K-2 | 217 | |
| E219 | [Requested talk] Surface coating of carbon nanotubes by aerosol process with plasma enhanced chemical vapor deposition | PECVD carbon nanotube dry coating process | K-2 | 396 | |
| Day 3 | G308 | Ultra conformal infiltration achieved by optimal design of SiC-CVI process and the effect on composite material properties | CVD SiC CMC | 5-h | 552 |
| Day 3 | G309 | Construction of the overall reaction model for optimizing SiC-CVD using Methyltrichlorosilane(4) | SiC Reaction model CVD | 5-h | 664 |
| Day 3 | PE383 | Effects of HCl gas addition and high concentration precursor supply to SiC-CVI process aiming for uniform growth in multi-scale | CVD SiC | 5-h | 478 |
| Day 3 | PE386 | Synthesis and characterization of Ti1-xAlxN films by thermal CVD | CVD coating TiAlN | 5-h | 321 |
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SCEJ 82nd Annual Meeting (Tokyo, 2017)
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