成長 - Program search result - SCEJ 82nd Annual Meeting (Tokyo, 2017)

`SCEJ 82nd Annual Meeting (Tokyo, 2017)`

Last modified: 2017-02-20 10:00:00

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Program search result : 成長 : 7 programs

The abstracts can be viewed by clicking the Paper IDs.
The ID/PW printed on the PROGRAM book are required.

Title (J) field includes “成長”; 7 programs are found.
The search results are sorted by the start time.

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
Day 2 10:20– 10:40	E205	[Requested talk] Reaction Mechanism and Growth-rate Distribution in Metal-Organic Vapor-Phase Epitaxy of GaN (U. Tokyo) *(Ful)Sugiyama Masakazu, (Ful)Momose Takeshi, (Politecnico Di Milano) Ravasio Stefano, Cavallotti Carlo, (U. Tokyo) (Ful)Shimogaki Yukihiro	GaN MOVPE reaction mechanism	K-2	324
Day 2 11:20– 11:40	E208	[Requested talk] Surface reaction design for silicon epitaxial growth based on the reactor simulation (Yokohama Nat. U.) *(Ful)Habuka Hitoshi, Watanabe Toru, Yamada Ayami, Saito Ayumi, Sakurai Ayumi	silicon epitaxial growth rate trichlorosilane silicon hydride	K-2	14
Day 2 14:20– 14:40	H217	In-situ observation of crystal growth in the levitated micro-droplet (Gunma U.) (Stu·PCEF)Matsuoka Satoshi, (Stu·PCEF)Shiratori Yudai, *(Ful)Harano Azuchi	Levitated droplet Crystal Growth Electrodynamic Balance	2-f	134
Day 2 16:40– 17:00	E224	[Requested talk] Effects of N₂O Addition during the Growth of ZnO Films by Chemical Vapor Deposition Using a Catalytic Reaction (Nagaoka U. Tech.) Tajima Ryouichi, Watanabe Koudai, Ono Shotarou, Kato Takahiro, *Yasui Kanji	chemical vapor deposition catalytic reactions ZnO films	K-2	112
Day 3 13:20– 15:20	PE314	Study on void growth in acrylate resin during wet coagulation process (Kobe U.) *(Stu)Fukushima Wataru, (Ful)Hidema Ruri, (Ful)Suzuki Hiroshi, (Ful)Komoda Yoshiyuki, (Ful)Suzuki Kosuke	acrylate resin wet coagulation	2-a	643
Day 3 13:20– 15:20	PE365	Continuous Production of Single-Wall Carbon Nanotubes and Their Fibers by Floating Catalyst Chemical Vapor Deposition (Waseda U.) *(Stu)Namiki Katsuya, (Ful)Sugime Hisashi, (Ful)Osawa Toshio, (Ful)Noda Suguru	single-wall carbon nanotubes floating catalyst chemical vapor deposition reaction field control	5-h	273
Day 3 13:20– 15:20	PE383	Effects of HCl gas addition and high concentration precursor supply to SiC-CVI process aiming for uniform growth in multi-scale (U. Tokyo) *(Stu)Naka Tomoaki, (Stu)Shima Kohei, (Stu)Sato Noboru, (Stu)Funato Yuichi, (IHI) (Ful)Fukushima Yasuyuki, (U. Tokyo) (Ful)Momose Takeshi, (Ful)Shimogaki Yukihiro	CVD SiC	5-h	478

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SCEJ 82nd Annual Meeting (Tokyo, 2017)

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