CVD - Program search result - SCEJ 82nd Annual Meeting (Tokyo, 2017)

`SCEJ 82nd Annual Meeting (Tokyo, 2017)`

Last modified: 2017-02-20 10:00:00

Meeting Info.
Program
- Program Menu
- Tech. Sessions
- narrow view
- Day 1
- Day 2
- Day 3
By Session
- Session list
- Gen.S.(Oral)
- Gen.S.(Poster)
  - Poster A
  - Poster B
  - Poster C
  - Poster D
  - Poster E
- F: CIT Forum
  - F-1
  - F-2
- SS/SP: S.Ind.
  - SS-1
  - SS-2
  - SS-3
  - SS-4
  - SS-5
  - SS-6
  - SS-7
  - SP-8
  - SP-9
- K: Int.Symp.
  - K-1
  - K-2
  - K-3
- HC/HQ: Hq.,etc.
  - HC-11
  - HC-12
  - HC-13
  - HC-14
  - HC-15
  - HC-16
  - HQ-21
By Hall
- Hall list
- A-D:3F Kyoshitsu-to
- X,E-H:4F Kyoshitsu-to
  - X: 4F 403
  - E: 4F 404
  - F: 4F 405
  - G: 4F 406
  - H: 4F 407
- I-J:5F Kyoshitsu-to
- LM:4F Koryu-to
  - L: 4F 401
  - M: 4F 402
- N:5F Koryu-to
  - N: 5F 501
- PZ:6F Koryu-to
  - P Poster A
  - P Poster B
  - P Poster C
  - P Poster D
  - P Poster E
  - Z: 6F
- Y:1F Kyoshitsu-to
  - Y 1F Lounge
Search/Index

Program search result : CVD : 11 programs

The abstracts can be viewed by clicking the Paper IDs.
The ID/PW printed on the PROGRAM book are required.

Keywords field exact matches “CVD”; 11 programs are found.
The search results are sorted by the start time.

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
Day 2 9:00– 9:40	E201	[Invited lecture] Analysis and Design of CVD/ALD processes Based on Chemical Reaction Engineering (U. Tokyo) (Ful)Shimogaki Yukihiro	Chemical Reaction Engineering CVD Process Design	K-2	838
Day 2 14:20– 14:40	E217	[Requested talk] Synthesis of carbon nitride using microwave plasma CVD (Gifu U.) *Tanaka Ippei, (Chiba Inst. Tech.) Sakamoto Yukihiro	plasma CVD carbon nitride	K-2	477
Day 3 9:20– 11:20	PD334	Hydrocarbon separation through silica composite membranes (Shibaura Inst. Tech.) *(Stu)Ishii K., Yoshida M., (Ful)Nomura M.	hydrocarbon CVD silica membrane	4-a	132
Day 3 9:20– 11:20	PD372	Development of acid stable silica membranes for hydrogen separation (Shibaura Inst. Tech.) *(Stu)Shibata Ai, (Ful)Nomura Mikihiro	hydrogen CVD silica membrane	4-a	122
Day 3 9:20– 11:20	PD376	Investigation for practical application of CVD silica membrane (RITE) *(Ful)Urai Hiromi, (Ful)Nishino Hitoshi, (Ful)Nishida Ryoichi, (Ful)Nakao Shin-ichi	silica membrane CVD gas separation	4-a	615
Day 3 11:00– 11:20	G307	Investigation of chemical etching condition for large-area graphene synthesis on copper foils (Fukuoka U.) *(Ful)Yoshihara Naoki, (Ful)Noda Masaru	Graphene CVD Chemical etching	5-h	476
Day 3 11:20– 11:40	G308	Ultra conformal infiltration achieved by optimal design of SiC-CVI process and the effect on composite material properties (U. Tokyo) *(Stu)Shima Kohei, (Stu)Sato Noboru, (Stu)Funato Yuichi, (Stu)Naka Tomoaki, (IHI) (Ful)Fukushima Yasuyuki, (U. Tokyo) (Ful)Momose Takeshi, (Ful)Shimogaki Yukihiro	CVD SiC CMC	5-h	552
Day 3 11:40– 12:00	G309	Construction of the overall reaction model for optimizing SiC-CVD using Methyltrichlorosilane(4) (U. Tokyo) *(Stu)Funato Yuichi, (Stu)Shima Kohei, (Stu)Sato Noboru, (Stu)Naka Tomoaki, (Ful)Fukushima Yasuyuki, (Ful)Momose Takeshi, (Ful)Shimogaki Yukihiro	SiC Reaction model CVD	5-h	664
Day 3 13:20– 15:20	PE383	Effects of HCl gas addition and high concentration precursor supply to SiC-CVI process aiming for uniform growth in multi-scale (U. Tokyo) *(Stu)Naka Tomoaki, (Stu)Shima Kohei, (Stu)Sato Noboru, (Stu)Funato Yuichi, (IHI) (Ful)Fukushima Yasuyuki, (U. Tokyo) (Ful)Momose Takeshi, (Ful)Shimogaki Yukihiro	CVD SiC	5-h	478
Day 3 13:20– 15:20	PE386	Synthesis and characterization of Ti_1-xAl_xN films by thermal CVD (U. Tokyo) *(Stu)Sato Hiroki, Hirabaru Tomoko, (Kyocera) Kubo Hayato, (U. Tokyo) (Ful)Momose Takeshi, (Kyocera) Tanibuchi Takahito, (U. Tokyo) (Ful)Shimogaki Yukihiro	CVD coating TiAlN	5-h	321
Day 3 14:05– 14:55	X310	High speed silicon deposition in PE-CVD using a high speed jet. (Gifu U.) (Ful)Nishida Satoshi	CVD silicon high deposition rate	HQ-21	109

Show/Hide:	Day 1	Day 2	Day 3

Technical program
Technical sessions (Wide) (For narrow screen)
Session programs
Search in technical program
SCEJ 82nd Annual Meeting (Tokyo, 2017)

www3.scej.org