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SCEJ 82nd Annual Meeting (Tokyo, 2017)

Last modified: 2017-02-20 10:00:00

Hall and day program : Hall G, Day 3

The abstracts can be viewed by clicking the Paper IDs.
The ID/PW printed on the PROGRAM book are required.

Hall G(Kyoshitsu-to 4F 406), Day 3(Mar. 8)

5

TimePaper
ID
Title / AuthorsKeywordsTopic codeAck.
number
5. Chemical reaction engineering
(9:00–10:20) (Chair: Fukushima Yasuyuki, Yoshihara Naoki)
9:009:20G301Study on the mechanism of the radical formation for the microbubble-induced ultrasonic cavitations
microbubble
ultrasound
radical
5-b179
9:209:40G302Investigation on Fe Loading Condition and Reductants for CO2 Reduction Performance Improvement of Fe/TiO2 photocatalyst
Photocatalyst
CO2 Reduction Performance
Reductants
5-c104
9:4010:00G303Vapor phase dehydration of ethanol with a packed-bed zeolite membrane reactor
zeolite
ethanol dehydration
membrane reactor
5-d774
10:0010:20G304Low temperature decomposition of ammonia using a wall-tube type of membrane reactor
wall-tube reactor
palladium membrane
ammonia
5-d776
(10:20–12:00) (Chair: Murakami Yoshinori, Itoh Naotsugu)
10:2010:40G305Impacts of fuel type on carbon nanotube synthesis in a diesel engine and consideration of its growth mechanism
Carbon nanotube
Diesel engine
Growth mechanism
5-h86
10:4011:00G306Fabrication of Ag-TiO2 nanocomposite films via one-step gas-phase deposition and their characterizations after heat treatment processes
PECVD
PVD
photocatalytic activity
5-h243
11:0011:20G307Investigation of chemical etching condition for large-area graphene synthesis on copper foils
Graphene
CVD
Chemical etching
5-h476
11:2011:40G308Ultra conformal infiltration achieved by optimal design of SiC-CVI process and the effect on composite material properties
CVD
SiC
CMC
5-h552
11:4012:00G309Construction of the overall reaction model for optimizing SiC-CVD using Methyltrichlorosilane(4)
SiC
Reaction model
CVD
5-h664

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SCEJ 82nd Annual Meeting (Tokyo, 2017)


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