5-h - Program search result - SCEJ 85th Annual Meeting (2020)

`SCEJ 85th Annual Meeting (2020)`

Last modified: 2020-03-02 11:00:00

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Search/Index

Program search result : 5-h : 9 programs

The preprints(abstracts) can be viewed by clicking the Paper IDs.
(The ID/PW are sent to the registered participants and invited persons.)
- The program for IChES 2020 is here

Topics Code field begins with “5-h”; 9 programs are found.
The search results are sorted by the start time.

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
Day 3 9:20– 11:20	PD371	Effect of SiCl₄ addition for SiC-CVD from MTS/H₂ (U. Tokyo) *(Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (Stu)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	CVD SiC Recycle	5-h	450
Day 3 9:20– 11:20	PD372	Feeding metalorganic vapors, supporting catalysts and synthesizing long carbon nanotubes by fluidized bed (Waseda U.) *(Stu)Tatsukawa Arin, Li Mochen, (Reg)Sugime Hisashi, (Reg)Osawa Toshio, (Reg)Noda Suguru	carbon nanotube fluidized bed chemical vapor deposition	5-h	396
Day 3 9:20– 11:20	PD377	Fabrication and hierarchical structure control of carbon nanotube electron field emitter for X-ray tube (Waseda U.) *(Stu)Yasui Kotaro, Kitagawa Sae, (Reg)Sugime Hisashi, Ochi Hayato, Takahashi Daizo, (Waseda U.) (Reg)Noda Suguru	carbon nanotube electron field emitter hierarchical structure control	5-h	515
Day 3 9:20– 11:20	PD378	Kinetic analysis of TiAlN-CVD process for construction of reaction model (2) (U. Tokyo) *(Stu)Yamaguchi Jun, Hirabaru Tomoko, (Kyocera) (Cor)Kubo Hayato, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Kyocera) (Cor)Tanibuchi Takahito, (U. Tokyo) (Reg)Shimogaki Yukihiro	CVD TiAlN cutting tool	5-h	103
Day 3 13:00– 14:40	J313	Theoretical study for modeling surface reactions on SiC-CVI process (U. Tokyo) *(Stu)Sato Noboru, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	CH3SiCl3 SiC CVI surface reaction	5-h	222
Day 3 13:00– 14:40	J314	Time-evolution of film thickness profiles by level set method during CVD multiscale simulation (U. Tokyo) *(Stu)Zhang Jin, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	multiscale simulation chemical vapor deposition level set method	5-h	462
Day 3 13:00– 14:40	J315	Effects of dispersant for PECVD process with concurrent use of solid raw material upon synthesized composite thin films (Hiroshima U.) *(Reg)Shimada Manabu, (PCEF)Takahashi Kazuma, (Reg)Kubo Masaru	titanium dioxide carbon nanotube photocatalyst	5-h	572
Day 3 13:00– 14:40	J316	Residual stress in gas barrier silica film prepared by plasma chemical vapor deposition (Kyoto U.) *(Reg)Kawase M., (Stu)Hirata S., (Stu·PCEF)Wakisaka T.	CVD residual stress silica gas barrier film	5-h	608
Day 3 13:00– 14:40	J317	Development of methylammonium lead iodide perovskite film CVD process (Kyoto U.) *(Reg)Kawase M., (Stu)Murakami T., (Stu)Matsuda M.	CVD methylammonium lead iodide lead melt	5-h	614

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SCEJ 85th Annual Meeting (2020)

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