F113 - Hall F, Day 1 - Hall and day program - SCEJ 88th Annual Meeting (Tokyo, 2023)

`SCEJ 88th Annual Meeting (Tokyo, 2023)`

Last modified: 2023-12-13 19:10:32

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Hall and day program : Hall F, Day 1 : F113

The preprints(abstracts) are now open (Mar. 1st). These can be viewed by clicking the Paper IDs. The ID/PW sent to the Registered participants in Period I/II and invited persons are required.

Hall F(Lecture Hall Bldg., 2F L0023), Day 1(Mar. 15)

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
5. Chemical reaction engineering
(12:40–13:00) (Chair: Nii Susumu)
12:40– 13:00	F112	[The SCEJ Award for Outstanding Research Achievement] Design of Heterogeneous Photocatalysts with Active Surfaces and Their Application to High Difficulty Reduction Reactions (Osaka U.) *(Reg)Shiraishi Yasuhiro, (Reg)Hirai Takayuki	The SCEJ Award for Outstanding Research Achievement	0-b	770
Organized Session (CVD Reactions Section, Division of Chemical Reaction Engineering)
(13:00–14:20) (Chair: Nishida Satoshi, Shimizu Hideharu)
13:00– 13:20	F113	Chemical Vapor Deposition Rate Control of Bismuth-based Perovskite Thin Film for Photovoltaic Performances Improvement (Kyoto U.) *(Int)Yang Ziguang, (Stu)Togami Keito, (Stu)Tanabe Maika, (Reg)Kawase Motoaki	Chemical vapor deposition Methylammonium bismuth iodide Molten bismuth	5-h	554
13:20– 13:40	F114	The coke deposition rate from paraffins and olefins (Kyoto U.) *(Stu)Nakano Shinji, (Reg)Fujitsuka Hiroyasu, (Reg)Kawase Motoaki	fouling coking CVD	5-h	528
13:40– 14:00	F115	Aluminum nitride film production by chemical vapor deposition from triethylaluminum (Kyoto U.) *(Stu)Murahashi Kousuke, (Stu)Li Yafei, (Reg)Kawase Motoaki	CVD triethylaluminum AlN	5-h	540
14:00– 14:20	F116	Molecular Simulation Study on Effect of Group-III Precursors on III-V Compound Crystal Growth (Kyoto U.) *(Stu)Li Yafei, (Stu)Murahashi Kousuke, (Reg)Kawase Motoaki	MOCVD molecular simulations III-V compound	5-h	547
(14:40–15:40) (Chair: Kawase Motoaki)
14:40– 15:00	F118	CVD process from dichlorosilane, boron trichloride and monomethylsilane gases (Yokohama Nat. U.) Otani Mana, Muroi Mitsuko, *(Reg)Habuka Hitoshi	dihlorosilane boron trichloride monomethylsilane	5-h	7
15:00– 15:20	F119	Refinement of surface reaction mechanism of SiC-CVI based on theoretical study (U. Tokyo) *(Reg)Sato Noboru, (Stu)Kimura Shunsuke, (Stu)Otaka Yuhei, Wakiyama Tomoya, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	SiC CVI surface reaction model	5-h	245
15:20– 15:40	F120	In-situ visible light reflectance observation method for designing Co-ALD process with high substrate selectivity. (U. Tokyo) *(Stu)Kimura Shunsuke, (Stu)Yamaguchi Jun, (Reg)Sato Noboru, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	ALD in-situ observation reflectance	5-h	597
(16:00–16:40) (Chair: Habuka Hitoshi)
16:00– 16:20	F122	Density Function Theory Study of Copper bis(2,2,6,6-tetramethyl-3,5-heptanedionate) Adsorption on Cu (111) surface (U. Tokyo) *(Stu)Wu Yuxuan, (Reg)Sato Noboru, (Stu)Yamaguchi Jun, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	Atomic Layer Depositon Density Function Theory Surface Adsorption	5-h	217
16:20– 16:40	F123	Investigation on pretreatment conditions for low-resistivity copper film formation on dielectrics using supercritical fluid deposition (U. Tokyo) *(Stu)Nakajima Yusuke, Huang Yuyuan, (Reg)Shimogaki Yukihiro, (Reg)Momose Takeshi	SCFD Polymer resistivity	5-h	705
(16:40–17:00) (Chair: Kawase Motoaki)
16:40– 17:00		CVD reaction subdivision encouragement award ceremony

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SCEJ 88th Annual Meeting (Tokyo, 2023)

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