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SCEJ 50th Autumn Meeting (Kagoshima, 2018)

Hall and day program : Hall CD, Day 2

The abstracts can be viewed by clicking the Paper IDs.
The ID/PW printed on the PROGRAM book are required.
(The ID/PW have also been sent to the Earlybird registers and invited persons by e-mail.)

Hall CD(Bldg. "Lecture Room & Student Office", Faculty of Engineering 3F 302), Day 2(Sep. 19)

ST-25

TimePaper
ID
Title / AuthorsKeywordsTopic codeAck.
number
ST-25 [Trans-Division Symposium]
CVD and Dry Process
(13:00–14:00) (Chair: Shimogaki Yukihiro)
13:0013:40CD213[Review lecture] Development and prospects of hard coating for cutting tool using thermal CVD method
(Kyocera) (Cor)Tanibuchi Takahito
CVD
Cutting tool
Hard coating
ST-25468
13:4014:00CD215New alumina CVD process from alkyl aluminum
(Kyoto U.) *(Stu·PCEF)Nakamura Takumi, (Stu)Inokuti Kazuaki, (Stu)Nagata Kakeru, (Stu)Yakabi Ryo, (Reg)Kawase Motoaki
CVD
alkyl aluminum
alumina
ST-25882
(14:00–15:00) (Chair: Shimoyama Yusuke)
14:0014:20CD216Synthesis of Al-rich fcc-TiAlN by thermal CVD (2)
(U. Tokyo) *(Stu)Yamaguchi Jun, Hirabaru Tomoko, (Kyocera) (Cor)Kubo Hayato, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Kyocera) (Cor)Tanibuchi Takahito, (U. Tokyo) (Reg)Shimogaki Yukihiro
CVD
TiAlN
cutting tool
ST-25561
14:2014:40CD217Investigation of trench-filling mechanism and the effect of adding HCl during 4H-SiC CVD
(AIST) *(Reg)Mochizuki Kazuhiro, Ji Shiyang, Adachi Kohei, Kosugi Ryoji, Yonezawa Yoshiyuki, Okumura Hajime
4H-SiC
trench filling
HCl
ST-25142
14:4015:00CD218Theoretical study of surface reaction process on SiC-CVI process
(U. Tokyo) *(Stu)Sato Noboru, (Reg)Naka Tomoaki, (Stu)Kondo Yoshifumi, (Reg)Funato Yuichi, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
SiC
CVI
Surface Reaction
ST-25919

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SCEJ 50th Autumn Meeting (Kagoshima, 2018)


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