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SCEJ 50th Autumn Meeting (Kagoshima, 2018)

Last modified: 2018-09-04 10:00:00

Session programs : ST-25

The abstracts can be viewed by clicking the Paper IDs.
The ID/PW printed on the PROGRAM book are required.
(The ID/PW have also been sent to the Earlybird registers and invited persons by e-mail.)

ST-25 [Trans-Division Symposium]
CVD and Dry Process

Organizers: Akiyama Yasunobu (Tokai Univ.), Tsukune Atsuhiro (Taiyo Nippon Sanso), Noda Suguru (Waseda Univ.)

Hall CD, Day 2 | Hall CD, Day 3

TimePaper
ID
Title / AuthorsKeywordsTopic codeAck.
number
Hall CD(Bldg. "Lecture Room & Student Office", Faculty of Engineering 3F 302), Day 2(Sep. 19)
(13:00–14:00) (Chair: Shimogaki Yukihiro)
13:0013:40CD213[Review lecture] Development and prospects of hard coating for cutting tool using thermal CVD method
(Kyocera) (Cor)Tanibuchi Takahito
CVD
Cutting tool
Hard coating
ST-25468
13:4014:00CD215New alumina CVD process from alkyl aluminum
(Kyoto U.) *(Stu·PCEF)Nakamura Takumi, (Stu)Inokuti Kazuaki, (Stu)Nagata Kakeru, (Stu)Yakabi Ryo, (Reg)Kawase Motoaki
CVD
alkyl aluminum
alumina
ST-25882
(14:00–15:00) (Chair: Shimoyama Yusuke)
14:0014:20CD216Synthesis of Al-rich fcc-TiAlN by thermal CVD (2)
(U. Tokyo) *(Stu)Yamaguchi Jun, Hirabaru Tomoko, (Kyocera) (Cor)Kubo Hayato, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Kyocera) (Cor)Tanibuchi Takahito, (U. Tokyo) (Reg)Shimogaki Yukihiro
CVD
TiAlN
cutting tool
ST-25561
14:2014:40CD217Investigation of trench-filling mechanism and the effect of adding HCl during 4H-SiC CVD
(AIST) *(Reg)Mochizuki Kazuhiro, Ji Shiyang, Adachi Kohei, Kosugi Ryoji, Yonezawa Yoshiyuki, Okumura Hajime
4H-SiC
trench filling
HCl
ST-25142
14:4015:00CD218Theoretical study of surface reaction process on SiC-CVI process
(U. Tokyo) *(Stu)Sato Noboru, (Reg)Naka Tomoaki, (Stu)Kondo Yoshifumi, (Reg)Funato Yuichi, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
SiC
CVI
Surface Reaction
ST-25919
Hall CD(Bldg. "Lecture Room & Student Office", Faculty of Engineering 3F 302), Day 3(Sep. 20)
(9:00–10:00) (Chair: Kawakami Masato)
9:009:20CD301Guideline for uniform Cu film fabrication on high aspect ratio structure by supercritical fluid deposition
(U. Tokyo) *(Stu)Fujita Shotaro, (Reg)Deura Momoko, (Tokyo Tech) (Reg)Shimoyama Yusuke, (U. Tokyo) (Reg)Shimogaki Yukihiro, (Reg)Momose Takeshi
Supercritical fluid deposition
Diffusion coefficient
Kinetics
ST-25905
9:209:40CD302Supercritical dying and impregnation for fabrication of porous carbon electrode on Li-O2/CO2 battery
(Tokyo Tech) *(Stu)Kunanusont N., (Reg)Shimoyama Y.
Li- O2/CO2 battery
supercritical carbon dioxide
ionogel binder
ST-25685
9:4010:00CD303Tetracene thin film formation for organic photovoltaics by temperature-driven supercritical fluid deposition
(U. Tokyo) *(Stu)Lee Yanshao, (Reg)Deura Momoko, (Tokyo Tech) (Reg)Shimoyama Yusuke, (U. Tokyo) (Reg)Shimogaki Yukihiro, (Reg)Momose Takeshi
Temperature-driven Supercritical Fluid Deposition
Crystallization
Tetracene
ST-251058
(10:00–11:00) (Chair: Noda Suguru)
10:0010:20CD304[Invited lecture] CVD growth and growth mechanisms of graphene and related two-dimensional materials
(Kyushu U./AIST) Ago Hiroki
graphene
epitaxial growth
hexagonal boron nitride
ST-2544
10:2010:40CD305Effect of hydrogen sulfide on pyrolyitic carbon CVD
(Kyoto U.) *(Stu·PCEF)Makino Yusaku, (Reg)Kawase Motoaki
CVD
Carbon
Hydrogen sulfide
ST-25978
10:4011:00CD306Flame-assisted spray synthesis of CsxWO3 nanoparticles and their optical properties
(Hiroshima U.) *(Stu)Hirano Tomoyuki, Nakakura Shuhei, (Stu)Rinaldi Febrigia Ghana, (Reg·APCE)Ogi Takashi
cesium tungsten bronze
flame-assisted spray pyrolysis
aerosol
ST-25113
(11:00–12:00) (Chair: Shimada Manabu)
11:0011:20CD307Temperature field control of catalyst formation for gas-phase synthesis of single-wall carbon nanotubes
(Waseda U.) *(Stu)Namiki Katsuya, (Reg)Sugime Hisashi, (Reg)Ohsawa Toshio, (Reg)Noda Suguru
single-wall carbon nanotube
reaction field control
floating catalyst chemical vapor deposition
ST-25336
11:2011:40CD308Study on reaction mechanism for fabricating high quality zinc oxide thin film by Mist CVD
(Kochi U. Tech.) *(Stu)Nishi Misaki, Hasegawa Ryou, Yasuoka Tatsuya, Ueda Mariko, Sakamoto Masahito, Satou Shouta, Phimolphan Ruttongja, Liu Li, Dang. T Gian, Kawaharamura Toshiyuki
Mist CVD
ZnO
reaction mechanism
ST-25879
11:4012:00CD309Lithium-doped Zinc Oxide thin film's relative permittivity by LPCVD Method
(Tokai U.) *(Stu)Takemoto Satoshi, (Reg)Akiyama Yasunobu
CVD
Lithium-doped Zinc Oxide
Ferroelectric
ST-25832
(13:00–14:00) (Chair: Akiyama Yasunobu)
13:0013:40CD313[Review lecture] Thin film deposition and surface modification using species generated by catalytic decomposed reaction: Foundations and applications of HWCVD method
(Kyutech) Izumi Akira
HWCVD
Thin film
Surface modification
ST-25243
13:4014:00CD315Analysis of reaction kinetics of SiO2 atomic layer deposition with aminosilane-gases
(TTS) *(Reg)Kawakami M., Kagaya M., Mitsunari T., Sato J., Yabe K.
ALD
aminosilane
reaction kinetics
ST-25226
(14:00–15:00) (Chair: Tsukune Atsuhiro)
14:0014:20CD316[Invited lecture] Interface level formation at SiO2/Si by plasma etching
(Sony Semiconductor Manufacturing) *Nagahata Kazunori, Shigetoshi Takushi
Plasma
Etching
Damage
ST-25330
14:2014:40CD317Preparation and evaluation of TiB based films by RF plasma CVD
(Osaka Pref. U.) *(Stu)Kiyokawa Daichi, Fuji Kazuki, (Reg)Okamoto Naoki, (Reg)Saito Takeyasu
hard coating
plasma CVD
TiBCN
ST-25937
14:4015:00CD318Photocatalytic activity of composite thin films prepared by deposition of Ag and TiO2 particles under visible light irradiation
(Hiroshima U.) *(Stu·PCEF)Masaki Yuya, Jiang Dianping, (Reg)Kubo Masaru, (Reg)Shimada Manabu, (Hiroshima U./ITS Surabaya) (Reg)Kusdianto K.
PVD
PECVD
nanoparticle
ST-25576

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SCEJ 50th Autumn Meeting (Kagoshima, 2018)


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