Hall CD, Day 2 - Hall and day program - SCEJ 50th Autumn Meeting (Kagoshima, 2018)

`SCEJ 50th Autumn Meeting (Kagoshima, 2018)`

Last modified: 2018-09-04 10:00:00

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Hall and day program : Hall CD, Day 2

The abstracts can be viewed by clicking the Paper IDs.
The ID/PW printed on the PROGRAM book are required.
(The ID/PW have also been sent to the Earlybird registers and invited persons by e-mail.)

Hall CD(Bldg. "Lecture Room & Student Office", Faculty of Engineering 3F 302), Day 2(Sep. 19)

ST-25

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
ST-25 [Trans-Division Symposium] CVD and Dry Process
(13:00–14:00) (Chair: Shimogaki Yukihiro)
13:00– 13:40	CD213	[Review lecture] Development and prospects of hard coating for cutting tool using thermal CVD method (Kyocera) (Cor)Tanibuchi Takahito	CVD Cutting tool Hard coating	ST-25	468
13:40– 14:00	CD215	New alumina CVD process from alkyl aluminum (Kyoto U.) *(Stu·PCEF)Nakamura Takumi, (Stu)Inokuti Kazuaki, (Stu)Nagata Kakeru, (Stu)Yakabi Ryo, (Reg)Kawase Motoaki	CVD alkyl aluminum alumina	ST-25	882
(14:00–15:00) (Chair: Shimoyama Yusuke)
14:00– 14:20	CD216	Synthesis of Al-rich fcc-TiAlN by thermal CVD (2) (U. Tokyo) *(Stu)Yamaguchi Jun, Hirabaru Tomoko, (Kyocera) (Cor)Kubo Hayato, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Kyocera) (Cor)Tanibuchi Takahito, (U. Tokyo) (Reg)Shimogaki Yukihiro	CVD TiAlN cutting tool	ST-25	561
14:20– 14:40	CD217	Investigation of trench-filling mechanism and the effect of adding HCl during 4H-SiC CVD (AIST) *(Reg)Mochizuki Kazuhiro, Ji Shiyang, Adachi Kohei, Kosugi Ryoji, Yonezawa Yoshiyuki, Okumura Hajime	4H-SiC trench filling HCl	ST-25	142
14:40– 15:00	CD218	Theoretical study of surface reaction process on SiC-CVI process (U. Tokyo) *(Stu)Sato Noboru, (Reg)Naka Tomoaki, (Stu)Kondo Yoshifumi, (Reg)Funato Yuichi, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	SiC CVI Surface Reaction	ST-25	919

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SCEJ 50th Autumn Meeting (Kagoshima, 2018)

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