Deura Momoko - Program search result - SCEJ 51st Autumn Meeting (2020)

`SCEJ 51st Autumn Meeting (2020)`

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Program search result : Deura Momoko : 8 programs

All sessions can be attended from the On-line (Virtual) Meeting Site.
Preprints(Abstracts) are now open. Click the Paper IDs. (Registered participants and invited persons only)
The ID/PW was sent on Sept. 10 (for earlybird registered participants) or on Sept. 23 (for on-site registered participants).
(Aug. 8) Flash session of SY-69 has been cancelled.
(Aug. 24,27) Schedule of SY-74 (X306, X307) and HQ-11 (D301) has been changed.

Authors field exact matches “Deura Momoko”; 8 programs are found. (“Poster with Flash” presentations are double-counted.)
The search results are sorted by the start time.

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
Day 1 14:20– 14:40	X117	Effect of supercritical CO₂ drying condition on properties of porous carbon nanofiber electrode and Li-O₂ battery performance. (U. Tokyo) *(Stu)Zhang Yiping, (Thailand NSTDA) Kunanusont Nattanai, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro, (U. Tokyo/Tokyo Tech) (Reg)Shimoyama Yusuke	Supercritical CO2 drying Carbon nanofiber electrode Li-O2 battery	SY-74	273
Day 2 13:20– 13:40	K214	Effect of SiCl₄ addition for SiC-CVD from MTS/H₂ (U. Tokyo) *(Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (Stu)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	CVD SiC Recycle	ST-22	556
Day 2 13:40– 14:00	K215	Manufacture of SiC_f/SiC by chlorine-free Chemical Vapor Infiltration (U. Tokyo) *(Stu)Aji Ryosuke, (Stu)Otaka Yuhei, (Stu)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	SiC chemical vapor infiltration tetramethylsilane	ST-22	822
Day 2 14:20– 14:40	K217	Kinetic analysis of TiAlN-CVD process for construction of reaction model (2) (U. Tokyo) *(Stu)Yamaguchi Jun, Hirabaru Tomoko, (Kyocera) (Cor)Kubo Hayato, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Kyocera) (Cor)Tanibuchi Takahito, (U. Tokyo) (Reg)Shimogaki Yukihiro	CVD TiAlN cutting tool	ST-22	153
Day 3 10:40– 11:00	K306	Reaction mechanism analysis of polycrystalline SiC-CVD for high-speed, uniform growth process design (U. Tokyo) *(Stu)Oku T., (Reg)Deura M., (Reg)Momose T., (Reg)Shimogaki Y.	Reaction model SiC CVD	ST-22	499
Day 3 11:00– 11:20	K307	Time-evolution of film thickness profiles by level set method during CVD multiscale simulation (U. Tokyo) *(Stu)Zhang Jin, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	multiscale simulation chemical vapor deposition level set method	ST-22	504
Day 3 13:40– 14:00	K315	Theoretical study for modeling surface reactions on SiC-CVI process (U. Tokyo) *(Stu)Sato Noboru, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	CH3SiCl3 SiC CVI surface reaction	ST-22	665
Day 3 14:00– 14:20	K316	Construction of surface reaction mechanism of SiC-CVI based on theoretical study (U. Tokyo) *(Stu)Sato Noboru, (Stu)Kondo Yoshifumi, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (Reg)Fukushima Yasuyuki, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	SiC-CVI Surface reaction mechanism CH3SiCl3	ST-22	682

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SCEJ 51st Autumn Meeting (2020)

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