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SCEJ 51st Autumn Meeting (2020)

Last modified: 2020-09-26 20:28:04

Session programs : ST-22

All sessions can be attended from the On-line (Virtual) Meeting Site.
Preprints(Abstracts) are now open. Click the Paper IDs. (Registered participants and invited persons only)
The ID/PW was sent on Sept. 10 (for earlybird registered participants) or on Sept. 23 (for on-site registered participants).
(Aug. 8) Flash session of SY-69 has been cancelled.
(Aug. 24,27) Schedule of SY-74 (X306, X307) and HQ-11 (D301) has been changed.

ST-22 [Trans-Division Symposium]
CVD and Dry Processes

Organizers: Shimada Manabu (Hiroshima Univ.), Habuka Hitoshi (Yokohama Nat. Univ.), Nishida Satoshi (Gifu Univ.), Sugime Hisashi (Waseda Univ.)

CVD and other dry processes are core technology in the industry applications for solar cell, electronics devices, MEMS, and functional coatings. This symposium motivates to discuss the logical optimization and design for controlling the microstructure and functions of thin films and fine particles produced by CVD or other dry processes based on the theoretical understanding of reaction mechanisms. Young Researcher Award will be given to distinguished young speakers chosen at the session.

Hall K, Day 2 | Hall K, Day 3

TimePaper
ID
Title / AuthorsKeywordsTopic codeAck.
number
Hall K(), Day 2(Sep. 25)
(9:20–10:20) (Chair: Mori Shinsuke)
9:209:40K202Effects of dispersant for PECVD process with concurrent use of solid raw material upon synthesized composite thin films
(Hiroshima U.) *(Reg)Shimada Manabu, (PCEF)Takahashi Kazuma, (Reg)Kubo Masaru
titanium dioxide
carbon nanotube
photocatalyst
ST-22213
9:4010:00K203Preparation of nanostructured particles using direct spray type tubular flames
(Hiroshima U.) *(Stu)Hirano Tomoyuki, (Reg·APCE)Ogi Takashi
Nanostructured particle
Flame spray pyrolysis
Tubular flame
ST-2255
10:0010:20K204Synthesis of metal particles by tubular flames
(Hiroshima U.) *(Stu)Kikkawa Jun, (Stu)Hirano Tomoyuki, (Reg·APCE)Ogi Takashi
Metal particles
Flame spray pyrolysis
Tubular flame
ST-22174
10:2010:40Break
(10:40–12:00) (Chair: Shimada Manabu)
10:4011:00K206Effects of the central metals of perovskite thin film on structure
(Kyoto U.) *(Stu·PCEF)Matsuda Megumi, (Stu)Murakami Takanori, (Stu)Matsumura Nanzuki, (Reg)Kawase Motoaki
CVD
perovskite
central metals
ST-22414
11:0011:20K207Highly-loaded Ni on CeO2 prepared by flame spray pyrolysis
(Yamagata U.) (Reg)Fujiwara Kakeru
Ni
CeO2
Flame spray pyrolysis
ST-22686
11:2012:00K208[Review lecture] Future Prospects of Plasma Deposition Technology
(Tohoku U. NICHe) Goto Tetsuya
plasma enhanced deposition
plasma equipment design
reactive species control
ST-22110
(13:00–14:20) (Chair: Nishida Satoshi)
13:0013:20K213[Invited lecture] A new HVPE growth technique which brings high quality GaN substrates; maskless-3D
(Sciocs) Yoshida Takehiro
GaN substrate,
HVPE
low dislocation density
ST-22112
13:2013:40K214Effect of SiCl4 addition for SiC-CVD from MTS/H2
(U. Tokyo) *(Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (Stu)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
CVD
SiC
Recycle
ST-22556
13:4014:00K215Manufacture of SiCf/SiC by chlorine-free Chemical Vapor Infiltration
(U. Tokyo) *(Stu)Aji Ryosuke, (Stu)Otaka Yuhei, (Stu)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
SiC
chemical vapor infiltration
tetramethylsilane
ST-22822
14:0014:20K216Production and Characterization of Organic Thin Films by Rapid Expansion of Supercritical Solutions (RESS) Using CO2
(Kanazawa U.) *(Stu)Sakamoto Y., Kobayashi T., Kiyosawa T., (Stu)Kamata W., (Reg)Uchida H.
RESS
Organic thin films
Supercritical CO2
ST-22781
(14:20–15:20) (Chair: Kawakami Masato)
14:2014:40K217Kinetic analysis of TiAlN-CVD process for construction of reaction model (2)
(U. Tokyo) *(Stu)Yamaguchi Jun, Hirabaru Tomoko, (Kyocera) (Cor)Kubo Hayato, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Kyocera) (Cor)Tanibuchi Takahito, (U. Tokyo) (Reg)Shimogaki Yukihiro
CVD
TiAlN
cutting tool
ST-22153
14:4015:00K218Synthesis of AlOx thin films by mist-CVD for electrical insulator layer of FETs
(Saitama U.) *(Stu)Arifuzzaman Rajib, Shida Tomohiro, Abdul Kuddus, Ueno Keiji, Shirai Hajime
mist-CVD
AlOx
ST-22306
15:0015:20K219Fabrication of SiO2 and Al2O3 insulator film by mist chemical vapor deposition
(U. Tokyo) *(Stu)Kinoshita Sayaka, (U. Tokyo ESC) (Reg)Sakai Enju, (U. Tokyo/U. Tokyo) (Reg)Tsuji Yoshiko
insulator
thin-film-transistor
mist chemical vapor deposition
ST-22135
Hall K(), Day 3(Sep. 26)
(9:00–10:20) (Chair: Noda Suguru, Habuka Hitoshi)
9:009:20K301Continuous synthesis of carbon nanoparticle-nanotube composite by high-temperature pyrolysis of acetylene
(Waseda U.) *(Stu)Urata Yua, Otahara Ryoya, (Reg)Osawa Toshio, (Reg)Sugime Hisashi, (Denka) Nako Yuki, Okada Takuya, (Waseda U.) (Reg)Noda Suguru
Carbon nanoparticle
Carbon nanotube
CVD
ST-22175
9:209:40K302Fabrication and hierarchical structure control of carbon nanotube electron field emitter for X-ray tube
(Waseda U.) *(Stu)Yasui Kotaro, Kitagawa Sae, (Reg)Sugime Hisashi, (Meidensha) Ochi Hayato, Takahashi Daizo, (Waseda U.) (Reg)Noda Suguru
carbon nanotube
electron field emitter
hierarchical structure control
ST-22230
9:4010:00K303ZnO coating of carbon nanotubes by in-flight PECVD method
(Hiroshima U.) *(Stu)Yoshitake Haruki, (Stu)Hemanth Lakshmipura R., (Reg)Kubo Masaru, (Reg)Shimada Manabu
plasma-enhanced chemical vapor deposition
nanocoating
aerosol
ST-22310
10:0010:20K304QCM for evaluating gas flow in Minimal-CVD reactor
(Yokohama Nat. U.) Otani Mana, *(Reg)Habuka Hitoshi, (Minimal Fab) Ikeda Shin-ichi, Ishida Yuuki, Hara Shiro
CVD
QCM
Minimal
ST-2262
10:2010:40Break
(10:40–12:00) (Chair: Habuka Hitoshi)
10:4011:00K306Reaction mechanism analysis of polycrystalline SiC-CVD for high-speed, uniform growth process design
(U. Tokyo) *(Stu)Oku T., (Reg)Deura M., (Reg)Momose T., (Reg)Shimogaki Y.
Reaction model
SiC
CVD
ST-22499
11:0011:20K307Time-evolution of film thickness profiles by level set method during CVD multiscale simulation
(U. Tokyo) *(Stu)Zhang Jin, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
multiscale simulation
chemical vapor deposition
level set method
ST-22504
11:2012:00K308[Review lecture] Concept, design and future of semi-batch type ALD equipment and process
(TTS) *Katoh Hitoshi, Seshimo Yuji
ALD
Equipment
Semi-Batch
ST-22111
(13:00–14:20) (Chair: Sugime Hisashi)
13:0013:20K313[Invited lecture] Characterization of silicon and nitrogen doped diamond-like carbon thin films prepared by plasma-enhanced chemical vapor deposition
(Hirosaki U.) Nakazawa Hideki
diamond-like carbon
plasma-enhanced chemical vapor deposition
silicon
ST-22248
13:2013:40K314Residual stress in gas barrier silica film prepared by plasma chemical vapor deposition
(Kyoto U.) *(Reg)Kawase M., (Stu)Hirata S., (Stu)Wakisaka T.
CVD
Residual stress
Silica gas barrier film
ST-2213
13:4014:00K315Theoretical study for modeling surface reactions on SiC-CVI process
(U. Tokyo) *(Stu)Sato Noboru, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
CH3SiCl3
SiC CVI
surface reaction
ST-22665
14:0014:20K316Construction of surface reaction mechanism of SiC-CVI based on theoretical study
(U. Tokyo) *(Stu)Sato Noboru, (Stu)Kondo Yoshifumi, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (Reg)Fukushima Yasuyuki, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro
SiC-CVI
Surface reaction mechanism
CH3SiCl3
ST-22682

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SCEJ 51st Autumn Meeting (2020)


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