Hall K - Hall and day program - SCEJ 51st Autumn Meeting (2020)

`SCEJ 51st Autumn Meeting (2020)`

Last modified: 2023-05-16 19:47:30

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Hall and day program : Hall K

All sessions can be attended from the On-line (Virtual) Meeting Site.
Preprints(Abstracts) are now open. Click the Paper IDs. (Registered participants and invited persons only)
The ID/PW was sent on Sept. 10 (for earlybird registered participants) or on Sept. 23 (for on-site registered participants).
(Aug. 8) Flash session of SY-69 has been cancelled.
(Aug. 24,27) Schedule of SY-74 (X306, X307) and HQ-11 (D301) has been changed.

Hall K()

Hall K, Day 1 | Hall K, Day 2 | Hall K, Day 3
SY-76 | ST-22

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
Hall K(), Day 1(Sep. 24)
SY-76 [Symposium of Division of Safety] The Subjects and Approaches to Process Safety Management
(13:00–14:40) (Chair: Takeda Kazuhiro, Shimada Yukiyasu)
13:00– 13:40	K113	[Invited lecture] Designing a New PSM (Process Safety Management) Framework (Tokyo Tech) (Reg)Naka Yuji	Process Safety Management Risk Based Process Safety Sub-Managements	SY-76	143
13:40– 14:00	K115	[Requested talk] LOPA translation working group activities (Tokyo Tech) (Reg)Fuchino Tetsuo, (Safety Case Lab.) *(Reg)Iuchi Kensuke, (TUAT) (Reg)Kitajima Teiji, (JNIOSH) (Reg)Shimada Yukiyasu	LOPA Process Safety Management Process Hazard Analysis	SY-76	231
14:00– 14:20	K116	[Requested talk] Utilization of Logic Tree Analysis Results to Learn from Experiences of Process Safety Incidents (Tokyo Tech) (Reg)Fuchino Tetsuo	Incident Investigation Process Safety Incident Logic Tree	SY-76	519
14:20– 14:40	K117	[Requested talk] Development of Prediction Model for Environmental Condition of Deterioration Phenomena for Asset Integrity Management (Tokyo Tech) (Reg)Fuchino Tetsuo	Asset Integrity Environmental Condition Deterioration Phenomena	SY-76	518
14:40– 15:00		Break
(15:00–16:20) (Chair: Fuchino Tetsuo, Minamigawa Tadao)
15:00– 15:20	K119	[Requested talk] A study on requirements for implementation of smart engineering support system for management-of-change based on business process model (Shizuoka U.) *(Reg)Takeda Kazuhiro, (Tokyo Tech) (Reg)Fuchino Tetsuo, (Saito MOT Lab) Saito Hideo, (TUAT) (Reg)Kitajima Teiji, (Safety Case Lab.) (Reg)Iuchi Kensuke, (JNIOSH) (Reg)Shimada Yukiyasu	management of change smart management business process model	SY-76	40
15:20– 15:40	K120	Simplified identification method of accident scenarios with fire and explosion in chemical risk assessment (JNIOSH) *(Reg)Shimada Yukiyasu, (Reg)Sato Yoshihiko, Takahashi Akiko	Chemical risk assessment Scenario identification Fire and explosion prevention	SY-76	441
15:40– 16:00	K121	Scenario diagram and viewpoint list for supporting consideration of accident scenarios related to unintended reactions (JNIOSH) *(Reg)Sato Yoshihiko, (Reg)Shimada Yukiyasu, Itagaki Haruhiko	Unintended reactions Consideration of accident scenarios Fire and explosion prevention	SY-76	228
16:00– 16:20	K122	Core Principles for creating, strengthening, and sustaining process safety culture (Safety Competency) (Reg)Uno Kenichi	Process Safety Safety Culture Causal Loop	SY-76	47
Hall K(), Day 2(Sep. 25)
ST-22 [Trans-Division Symposium] CVD and Dry Processes
(9:20–10:20) (Chair: Mori Shinsuke)
9:20– 9:40	K202	Effects of dispersant for PECVD process with concurrent use of solid raw material upon synthesized composite thin films (Hiroshima U.) *(Reg)Shimada Manabu, (PCEF)Takahashi Kazuma, (Reg)Kubo Masaru	titanium dioxide carbon nanotube photocatalyst	ST-22	213
9:40– 10:00	K203	Preparation of nanostructured particles using direct spray type tubular flames (Hiroshima U.) *(Stu)Hirano Tomoyuki, (Reg·APCE)Ogi Takashi	Nanostructured particle Flame spray pyrolysis Tubular flame	ST-22	55
10:00– 10:20	K204	Synthesis of metal particles by tubular flames (Hiroshima U.) *(Stu)Kikkawa Jun, (Stu)Hirano Tomoyuki, (Reg·APCE)Ogi Takashi	Metal particles Flame spray pyrolysis Tubular flame	ST-22	174
10:20– 10:40		Break
(10:40–12:00) (Chair: Shimada Manabu)
10:40– 11:00	K206	Effects of the central metals of perovskite thin film on structure (Kyoto U.) *(Stu·PCEF)Matsuda Megumi, (Stu)Murakami Takanori, (Stu)Matsumura Nanzuki, (Reg)Kawase Motoaki	CVD perovskite central metals	ST-22	414
11:00– 11:20	K207	Highly-loaded Ni on CeO₂ prepared by flame spray pyrolysis (Yamagata U.) (Reg)Fujiwara Kakeru	Ni CeO2 Flame spray pyrolysis	ST-22	686
11:20– 12:00	K208	[Review lecture] Future Prospects of Plasma Deposition Technology (Tohoku U. NICHe) Goto Tetsuya	plasma enhanced deposition plasma equipment design reactive species control	ST-22	110
(13:00–14:20) (Chair: Nishida Satoshi)
13:00– 13:20	K213	[Invited lecture] A new HVPE growth technique which brings high quality GaN substrates; maskless-3D (Sciocs) Yoshida Takehiro	GaN substrate, HVPE low dislocation density	ST-22	112
13:20– 13:40	K214	Effect of SiCl₄ addition for SiC-CVD from MTS/H₂ (U. Tokyo) *(Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (Stu)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	CVD SiC Recycle	ST-22	556
13:40– 14:00	K215	Manufacture of SiC_f/SiC by chlorine-free Chemical Vapor Infiltration (U. Tokyo) *(Stu)Aji Ryosuke, (Stu)Otaka Yuhei, (Stu)Sato Noboru, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	SiC chemical vapor infiltration tetramethylsilane	ST-22	822
14:00– 14:20	K216	Production and Characterization of Organic Thin Films by Rapid Expansion of Supercritical Solutions (RESS) Using CO₂ (Kanazawa U.) *(Stu)Sakamoto Y., Kobayashi T., Kiyosawa T., (Stu)Kamata W., (Reg)Uchida H.	RESS Organic thin films Supercritical CO2	ST-22	781
(14:20–15:20) (Chair: Kawakami Masato)
14:20– 14:40	K217	Kinetic analysis of TiAlN-CVD process for construction of reaction model (2) (U. Tokyo) *(Stu)Yamaguchi Jun, Hirabaru Tomoko, (Kyocera) (Cor)Kubo Hayato, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Kyocera) (Cor)Tanibuchi Takahito, (U. Tokyo) (Reg)Shimogaki Yukihiro	CVD TiAlN cutting tool	ST-22	153
14:40– 15:00	K218	Synthesis of AlOx thin films by mist-CVD for electrical insulator layer of FETs (Saitama U.) *(Stu)Arifuzzaman Rajib, Shida Tomohiro, Abdul Kuddus, Ueno Keiji, Shirai Hajime	mist-CVD AlOx	ST-22	306
15:00– 15:20	K219	Fabrication of SiO₂ and Al₂O₃ insulator film by mist chemical vapor deposition (U. Tokyo) *(Stu)Kinoshita Sayaka, (U. Tokyo ESC) (Reg)Sakai Enju, (U. Tokyo/U. Tokyo) (Reg)Tsuji Yoshiko	insulator thin-film-transistor mist chemical vapor deposition	ST-22	135
Hall K(), Day 3(Sep. 26)
(9:00–10:20) (Chair: Noda Suguru, Habuka Hitoshi)
9:00– 9:20	K301	Continuous synthesis of carbon nanoparticle-nanotube composite by high-temperature pyrolysis of acetylene (Waseda U.) *(Stu)Urata Yua, Otahara Ryoya, (Reg)Osawa Toshio, (Reg)Sugime Hisashi, (Denka) Nako Yuki, Okada Takuya, (Waseda U.) (Reg)Noda Suguru	Carbon nanoparticle Carbon nanotube CVD	ST-22	175
9:20– 9:40	K302	Fabrication and hierarchical structure control of carbon nanotube electron field emitter for X-ray tube (Waseda U.) *(Stu)Yasui Kotaro, Kitagawa Sae, (Reg)Sugime Hisashi, (Meidensha) Ochi Hayato, Takahashi Daizo, (Waseda U.) (Reg)Noda Suguru	carbon nanotube electron field emitter hierarchical structure control	ST-22	230
9:40– 10:00	K303	ZnO coating of carbon nanotubes by in-flight PECVD method (Hiroshima U.) *(Stu)Yoshitake Haruki, (Stu)Hemanth Lakshmipura R., (Reg)Kubo Masaru, (Reg)Shimada Manabu	plasma-enhanced chemical vapor deposition nanocoating aerosol	ST-22	310
10:00– 10:20	K304	QCM for evaluating gas flow in Minimal-CVD reactor (Yokohama Nat. U.) Otani Mana, *(Reg)Habuka Hitoshi, (Minimal Fab) Ikeda Shin-ichi, Ishida Yuuki, Hara Shiro	CVD QCM Minimal	ST-22	62
10:20– 10:40		Break
(10:40–12:00) (Chair: Habuka Hitoshi)
10:40– 11:00	K306	Reaction mechanism analysis of polycrystalline SiC-CVD for high-speed, uniform growth process design (U. Tokyo) *(Stu)Oku T., (Reg)Deura M., (Reg)Momose T., (Reg)Shimogaki Y.	Reaction model SiC CVD	ST-22	499
11:00– 11:20	K307	Time-evolution of film thickness profiles by level set method during CVD multiscale simulation (U. Tokyo) *(Stu)Zhang Jin, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	multiscale simulation chemical vapor deposition level set method	ST-22	504
11:20– 12:00	K308	[Review lecture] Concept, design and future of semi-batch type ALD equipment and process (TTS) *Katoh Hitoshi, Seshimo Yuji	ALD Equipment Semi-Batch	ST-22	111
(13:00–14:20) (Chair: Sugime Hisashi)
13:00– 13:20	K313	[Invited lecture] Characterization of silicon and nitrogen doped diamond-like carbon thin films prepared by plasma-enhanced chemical vapor deposition (Hirosaki U.) Nakazawa Hideki	diamond-like carbon plasma-enhanced chemical vapor deposition silicon	ST-22	248
13:20– 13:40	K314	Residual stress in gas barrier silica film prepared by plasma chemical vapor deposition (Kyoto U.) *(Reg)Kawase M., (Stu)Hirata S., (Stu)Wakisaka T.	CVD Residual stress Silica gas barrier film	ST-22	13
13:40– 14:00	K315	Theoretical study for modeling surface reactions on SiC-CVI process (U. Tokyo) *(Stu)Sato Noboru, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	CH3SiCl3 SiC CVI surface reaction	ST-22	665
14:00– 14:20	K316	Construction of surface reaction mechanism of SiC-CVI based on theoretical study (U. Tokyo) *(Stu)Sato Noboru, (Stu)Kondo Yoshifumi, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (Reg)Fukushima Yasuyuki, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	SiC-CVI Surface reaction mechanism CH3SiCl3	ST-22	682

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SCEJ 51st Autumn Meeting (2020)

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