Last modified: 2023-05-16 19:47:30
Time | Paper ID | Title / Authors | Keywords | Topic code | Ack. number |
---|---|---|---|---|---|
ST-22 [Trans-Division Symposium] CVD and Dry Processes | |||||
(9:20–10:20) (Chair: | |||||
K202 | Effects of dispersant for PECVD process with concurrent use of solid raw material upon synthesized composite thin films | titanium dioxide carbon nanotube photocatalyst | ST-22 | 213 | |
K203 | Preparation of nanostructured particles using direct spray type tubular flames | Nanostructured particle Flame spray pyrolysis Tubular flame | ST-22 | 55 | |
K204 | Synthesis of metal particles by tubular flames | Metal particles Flame spray pyrolysis Tubular flame | ST-22 | 174 | |
Break | |||||
(10:40–12:00) (Chair: | |||||
K206 | Effects of the central metals of perovskite thin film on structure | CVD perovskite central metals | ST-22 | 414 | |
K207 | Highly-loaded Ni on CeO2 prepared by flame spray pyrolysis | Ni CeO2 Flame spray pyrolysis | ST-22 | 686 | |
K208 | [Review lecture] Future Prospects of Plasma Deposition Technology | plasma enhanced deposition plasma equipment design reactive species control | ST-22 | 110 | |
(13:00–14:20) (Chair: | |||||
K213 | [Invited lecture] A new HVPE growth technique which brings high quality GaN substrates; maskless-3D | GaN substrate, HVPE low dislocation density | ST-22 | 112 | |
K214 | Effect of SiCl4 addition for SiC-CVD from MTS/H2 | CVD SiC Recycle | ST-22 | 556 | |
K215 | Manufacture of SiCf/SiC by chlorine-free Chemical Vapor Infiltration | SiC chemical vapor infiltration tetramethylsilane | ST-22 | 822 | |
K216 | Production and Characterization of Organic Thin Films by Rapid Expansion of Supercritical Solutions (RESS) Using CO2 | RESS Organic thin films Supercritical CO2 | ST-22 | 781 | |
(14:20–15:20) (Chair: | |||||
K217 | Kinetic analysis of TiAlN-CVD process for construction of reaction model (2) | CVD TiAlN cutting tool | ST-22 | 153 | |
K218 | Synthesis of AlOx thin films by mist-CVD for electrical insulator layer of FETs | mist-CVD AlOx | ST-22 | 306 | |
K219 | Fabrication of SiO2 and Al2O3 insulator film by mist chemical vapor deposition | insulator thin-film-transistor mist chemical vapor deposition | ST-22 | 135 |
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SCEJ 51st Autumn Meeting (2020)