Sugime Hisashi - Program search result - SCEJ 51st Autumn Meeting (2020)

`SCEJ 51st Autumn Meeting (2020)`

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Program search result : Sugime Hisashi : 4 programs

All sessions can be attended from the On-line (Virtual) Meeting Site.
Preprints(Abstracts) are now open. Click the Paper IDs. (Registered participants and invited persons only)
The ID/PW was sent on Sept. 10 (for earlybird registered participants) or on Sept. 23 (for on-site registered participants).
(Aug. 8) Flash session of SY-69 has been cancelled.
(Aug. 24,27) Schedule of SY-74 (X306, X307) and HQ-11 (D301) has been changed.

Authors field exact matches “Sugime Hisashi”; 4 programs are found. (“Poster with Flash” presentations are double-counted.)
The search results are sorted by the start time.

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
Day 2 9:00– 10:25	PA209	Supporting catalyst from atomized metal nitrates and synthesizing long carbon nanotubes by fluidized bed (Waseda U.) *(Stu)Shirakawa Hiroto, Li Mochen, (Reg)Sugime Hisashi, (Reg)Osawa Toshio, (Reg)Noda Suguru	Carbon nanotube Fluidized bed Chemical vapor deposion	SY-79	234
Day 3 9:00– 9:20	K301	Continuous synthesis of carbon nanoparticle-nanotube composite by high-temperature pyrolysis of acetylene (Waseda U.) *(Stu)Urata Yua, Otahara Ryoya, (Reg)Osawa Toshio, (Reg)Sugime Hisashi, (Denka) Nako Yuki, Okada Takuya, (Waseda U.) (Reg)Noda Suguru	Carbon nanoparticle Carbon nanotube CVD	ST-22	175
Day 3 9:20– 9:40	K302	Fabrication and hierarchical structure control of carbon nanotube electron field emitter for X-ray tube (Waseda U.) *(Stu)Yasui Kotaro, Kitagawa Sae, (Reg)Sugime Hisashi, (Meidensha) Ochi Hayato, Takahashi Daizo, (Waseda U.) (Reg)Noda Suguru	carbon nanotube electron field emitter hierarchical structure control	ST-22	230
Day 3 13:00– 14:20	Chair: Sugime Hisashi
	K313	[Invited lecture] Characterization of silicon and nitrogen doped diamond-like carbon thin films prepared by plasma-enhanced chemical vapor deposition (Hirosaki U.) Nakazawa Hideki	diamond-like carbon plasma-enhanced chemical vapor deposition silicon	ST-22	248
	K314	Residual stress in gas barrier silica film prepared by plasma chemical vapor deposition (Kyoto U.) *(Reg)Kawase M., (Stu)Hirata S., (Stu)Wakisaka T.	CVD Residual stress Silica gas barrier film	ST-22	13
	K315	Theoretical study for modeling surface reactions on SiC-CVI process (U. Tokyo) *(Stu)Sato Noboru, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	CH3SiCl3 SiC CVI surface reaction	ST-22	665
	K316	Construction of surface reaction mechanism of SiC-CVI based on theoretical study (U. Tokyo) *(Stu)Sato Noboru, (Stu)Kondo Yoshifumi, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (Reg)Fukushima Yasuyuki, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	SiC-CVI Surface reaction mechanism CH3SiCl3	ST-22	682

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SCEJ 51st Autumn Meeting (2020)

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