Hall K, Day 3 - Hall and day program - SCEJ 51st Autumn Meeting (2020)

`SCEJ 51st Autumn Meeting (2020)`

Last modified: 2023-05-16 19:47:30

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Hall and day program : Hall K, Day 3

All sessions can be attended from the On-line (Virtual) Meeting Site.
Preprints(Abstracts) are now open. Click the Paper IDs. (Registered participants and invited persons only)
The ID/PW was sent on Sept. 10 (for earlybird registered participants) or on Sept. 23 (for on-site registered participants).
(Aug. 8) Flash session of SY-69 has been cancelled.
(Aug. 24,27) Schedule of SY-74 (X306, X307) and HQ-11 (D301) has been changed.

Hall K(), Day 3(Sep. 26)

ST-22

Time	Paper ID	Title / Authors	Keywords	Topic code	Ack. number
ST-22 [Trans-Division Symposium] CVD and Dry Processes
(9:00–10:20) (Chair: Noda Suguru, Habuka Hitoshi)
9:00– 9:20	K301	Continuous synthesis of carbon nanoparticle-nanotube composite by high-temperature pyrolysis of acetylene (Waseda U.) *(Stu)Urata Yua, Otahara Ryoya, (Reg)Osawa Toshio, (Reg)Sugime Hisashi, (Denka) Nako Yuki, Okada Takuya, (Waseda U.) (Reg)Noda Suguru	Carbon nanoparticle Carbon nanotube CVD	ST-22	175
9:20– 9:40	K302	Fabrication and hierarchical structure control of carbon nanotube electron field emitter for X-ray tube (Waseda U.) *(Stu)Yasui Kotaro, Kitagawa Sae, (Reg)Sugime Hisashi, (Meidensha) Ochi Hayato, Takahashi Daizo, (Waseda U.) (Reg)Noda Suguru	carbon nanotube electron field emitter hierarchical structure control	ST-22	230
9:40– 10:00	K303	ZnO coating of carbon nanotubes by in-flight PECVD method (Hiroshima U.) *(Stu)Yoshitake Haruki, (Stu)Hemanth Lakshmipura R., (Reg)Kubo Masaru, (Reg)Shimada Manabu	plasma-enhanced chemical vapor deposition nanocoating aerosol	ST-22	310
10:00– 10:20	K304	QCM for evaluating gas flow in Minimal-CVD reactor (Yokohama Nat. U.) Otani Mana, *(Reg)Habuka Hitoshi, (Minimal Fab) Ikeda Shin-ichi, Ishida Yuuki, Hara Shiro	CVD QCM Minimal	ST-22	62
10:20– 10:40		Break
(10:40–12:00) (Chair: Habuka Hitoshi)
10:40– 11:00	K306	Reaction mechanism analysis of polycrystalline SiC-CVD for high-speed, uniform growth process design (U. Tokyo) *(Stu)Oku T., (Reg)Deura M., (Reg)Momose T., (Reg)Shimogaki Y.	Reaction model SiC CVD	ST-22	499
11:00– 11:20	K307	Time-evolution of film thickness profiles by level set method during CVD multiscale simulation (U. Tokyo) *(Stu)Zhang Jin, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	multiscale simulation chemical vapor deposition level set method	ST-22	504
11:20– 12:00	K308	[Review lecture] Concept, design and future of semi-batch type ALD equipment and process (TTS) *Katoh Hitoshi, Seshimo Yuji	ALD Equipment Semi-Batch	ST-22	111
(13:00–14:20) (Chair: Sugime Hisashi)
13:00– 13:20	K313	[Invited lecture] Characterization of silicon and nitrogen doped diamond-like carbon thin films prepared by plasma-enhanced chemical vapor deposition (Hirosaki U.) Nakazawa Hideki	diamond-like carbon plasma-enhanced chemical vapor deposition silicon	ST-22	248
13:20– 13:40	K314	Residual stress in gas barrier silica film prepared by plasma chemical vapor deposition (Kyoto U.) *(Reg)Kawase M., (Stu)Hirata S., (Stu)Wakisaka T.	CVD Residual stress Silica gas barrier film	ST-22	13
13:40– 14:00	K315	Theoretical study for modeling surface reactions on SiC-CVI process (U. Tokyo) *(Stu)Sato Noboru, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (IHI) (Reg)Fukushima Yasuyuki, (U. Tokyo) (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	CH3SiCl3 SiC CVI surface reaction	ST-22	665
14:00– 14:20	K316	Construction of surface reaction mechanism of SiC-CVI based on theoretical study (U. Tokyo) *(Stu)Sato Noboru, (Stu)Kondo Yoshifumi, (Stu)Otaka Yuhei, (Stu)Aji Ryosuke, (Reg)Fukushima Yasuyuki, (Reg)Deura Momoko, (Reg)Momose Takeshi, (Reg)Shimogaki Yukihiro	SiC-CVI Surface reaction mechanism CH3SiCl3	ST-22	682

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SCEJ 51st Autumn Meeting (2020)

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